WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch (PNP ) better reverse leakage current and thermal resistance. SOD-123H SOT-23 profile surface mounted application in order to FEATURES • Low optimize board space. • Low power loss, high efficiency. current capability, low forward voltage drop. • Highand High voltage high current • High surge capability. Excellent• Guardring hFE Linearity for overvoltage protection. • Ultra high-speed switching. Low niose • Silicon epitaxial planar chip, metal silicon junction. Pb-Free •package is available Lead-free parts meet environmental standards of z z z z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. BASE 2. EMITTER MIL-STD-19500 /228code suffix ”G” RoHS product for packing 3. COLLECTOR • RoHS product for packing code suffix "G" Halogen free product for packing suffix Halogen free product for packingcode code suffix "H" “H” Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant MARKING: BA • Case : Molded plastic, SOD-123H , • Terminals(T:Plated terminals, pernoted) MIL-STD-750 unless solderable otherwise MAXIMUM RATINGS a=25℃ VCBO Parameter • Polarity : Indicated by cathode band Position : Any • Mounting Collector-Base Voltage • Weight : Approximated 0.011 gram Collector-Emitter Voltage VCEO -50 V -50 V -5 V 150 mA 200 mW Marking Code Tstg 125 ℃ FM1150-MH FM1200FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Junction Temperature RATINGS Storage Temperature VRRM 12 20 VDC 20 13 30 Pr el TJ im Ratings at 25℃Collector ambient temperature unless otherwise specified. Current -Continuous Single phase half wave, 60Hz, resistive of inductive load. Collector For capacitive load, deratePower currentDissipation by 20% IC PC Value in inches and (millimeters) Unit Dimensions MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Emitter-Base Voltage VEBO Maximum Recurrent Peak Reverse Voltage 14 40 14 21 specified) 28 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise Maximum RMS Voltage VRMS Maximum DC Blocking Voltage Symbol IO Parameter Maximum Average Forward Rectified Current 30 40 Test conditions 15 50 16 -55-125 Min IC= = -0.1mA, IB 0 -50 Emitter-base breakdown voltage Typical Junction Capacitance (Note 1) V(BR)EBO CJ IE= = -100 u A, IC 0 -5 -55 to +125 ICBOTJ = VCB= -50V ,IE 0 Collector cut-off current ICEO V= CE= -50V , IB 0 Storage Temperature Range TSTG CHARACTERISTICS Emitter cut-off current SYMBOL = VEB= - 5V, IC 0 IEBO DC current gain Maximum Average Reverse Current at @T A=25℃ hFE Rated DC Blocking Voltage VF @T A=125℃ NOTES: Base-emitter saturation voltage 105 140 100 150 1.0Typ 200 Max V V -55 to +150 - 65 to +175 V 30 40 120 Unit -0.1 uA -0.1 uA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Forward Voltage at 1.0A DC Collector-emitter saturation voltage 70 80 42 60 V(BR)CEO Operating Temperature Collector cut-off currentRange 56 35 superimposed onbreakdown rated load (JEDEC method) Collector-emitter voltage 120 200 50 -50 RΘJA 115 150 18 80 IC= = -100u A,IE 0 IFSM 10℃ 100 60 V(BR)CBO Collector-base voltage Peak Forwardbreakdown Surge Current 8.3 ms single half sine-wave Typical Thermal Resistance (Note 2) 0.031(0.8) Typ. ina ry Method 2026 Symbol 0.031(0.8) Typ. IR 0.50 VCE= -6V,IC= -2mA VCE(sat) IC=-100 mA, IB= -10mA VBE(sat) IC=-100 mA, IB= -10mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient fT Transition frequency VCE= -10V,IC= -1mA f=30MHz -0.1 0.70 130 0.85 0.5 10 80 uA 0.9 400 0.92 -0.3 V -1.1 V MHz CLASSIFICATION OF hFE Rank Range 2012-0 2012-06 L H 130-200 200-400 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) 0.031(0.8) Typ. ina ry Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) VRRM 12 20 Pr el RATINGS Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) Method 2026 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) .110(2.80) .063(1.60) .047(1.20) Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC COR Rev.D WILLAS ELECTRONIC CORP.