Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 9 @ VGS = -10V -30 13 @ VGS = -4.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications ID (A) -15 -11 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage ±25 VGS o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) -15 ID IDM ±50 IS -2.1 o TA=25 C a Power Dissipation o TA=70 C THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Case a Maximum Junction-to-Ambient t <= 5 sec t <= 5 sec RθJC RθJA W 2.3 TJ, Tstg Symbol A 3.1 PD Operating Junction and Storage Temperature Range A -11 o -55 to 150 Maximum 25 50 C Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4407_C Analog Power AM4407P SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance rDS(on) -1 VDS = 0 V, VGS = ±25 V ±100 VDS = -24 V, VGS = 0 V -1 -5 o VDS = -24 V, VGS = 0 V, TJ = 55 C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -13 A VGS = -4.5 V, ID = -11 A A 9 13 o A uA -50 VGS = -10 V, ID = -13 A, TJ = 55 C Forward Tranconductance Diode Forward Voltage V nA mΩ 11 gfs VSD VDS = -5 V, ID = -13 A IS = 2.1 A, VGS = 0 V 44 -0.7 S V Qg Qgs Qgd VDS = -15 V, VGS = -10 V, ID = -13 A 37.0 10.0 14.5 nC td(on) tr td(off) tf VDD = -15 V, RL = 6 Ω , ID = -1 A, VGEN = -10 V 19 11 121 68 nS Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4407_C Analog Power AM4407P Typical Electrical Characteristics (P-Channel) 2.6 VGS = -10V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 50 40 -4.5V -6.0V -3.0V 30 20 -2.5V 10 VGS = -3.0V 2.2 1.8 -3.5V -4.0V -5.0V -6.0V -10V 1 0.6 0 0 0.5 1 1.5 0 2 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 40 50 0.04 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 ID = -13A VGS = -10V 1.2 1 0.8 0.6 ID = -13A 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 -50 -25 0 25 50 75 100 125 2 2.5 TJ, JUNCTION TEMPERATURE (oC) -IS , REVERSE DRAIN CURRENT (A) VDS = -5.0V 40 30 o T A = -125 C o -55 C o 25 C 0 2 2.5 3 3.5 4.5 5 100 VGS = 0V 10 o T A = 125 C 1 0.1 0.01 o 25 C 0.001 o -55 C 0.0001 0 -VGS , GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation Figure 5. Transfer Characteristics with Source Current and Temperature 3 September, 2002 - Rev. A PRELIMINARY 4 Gate to Source Voltage 50 10 3.5 Figure 4. On-Resistance Variation with with Temperature 20 3 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation 1.5 20 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics -ID, DRAIN CURRENT (A) -4.5V 1.4 Publication Order Number: DS-AM4407_C Analog Power AM4407P 10 6000 ID = -13A VDS = -10V -15V 6 -20V 4 2 Ciss 4000 3000 2000 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 70 80 90 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 60 100 10ms 10 100ms 1ms P eak T ransient P ow er (W ) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 5000 8 CAPACITANCE (pF -VGS, GATE-SOURCE VOLTAGE (V) Typical Electrical Characteristics (P-Channel) 100ms 10s 1 1s DC VGS = -10V SINGLE PULSE 0.1 o RqJA = 125 C/W o TA = 25 C 0.01 0.1 1 10 50 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 TIME (S) -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT 1 0.5 RQJ A(t) = R(t) + RQJ A RQJA = 125ºC/W 0.2 0.1 P(P K) t1 0.1 t2 0.05 T J - T A = P ÷ RQJ A(t) 0.02 SINGLE P ULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (S) Figure 11. Transient Thermal Response Curve 4 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4407_C Analog Power AM4407P Package Information SO-8: 8LEAD H x 45° 5 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4407_C