Analog Power AM5829P P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (OHM) ID (A) ±3.6 0.110 @ VGS = -4.5V -20 ±3.0 0.160 @ VGS = -2.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • SCHOTTKYPRODUCT SUMMARY Vf (V) VKA (V) IF (A) Diode Forward Voltage 20 0.48V @ 1.0A 1.0 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe CF1206-8 saves board space Fast switching speed High performance trench technology CF1206-8 Top View A A 1 2 8 7 S 3 4 6 G 5 S K D A K K D D G P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS -20 Drain-Source Voltage (MOSFET) V Reverse Voltage (Schottky) 20 VKA Gate-Source Voltage (MOSFET) ±8 VGS o o TA=25 C a Continuous Drain Current (TJ=150 C) (MOSFET) ID o TA=70 C b Pulsed Drain Current (MOSFET) a Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) ±10 IS -1.6 0.5 8 IF IFM o TA=70 C PD o TA=25 C Maximum Power Dissipation (Schottky) o TA=70 C a MaximumJunction-to-Ambient t <= 5 sec Steady State 1 W 1.3 0.68 Symbol Typ Max RthJA 50 90 60 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1.1 o C TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter A 2.1 o a ±1.9 IDM TA=25 C a Maximum Power Dissipation (MOSFET) ±2.5 o C/W Publication Order Number: DS-AM5829_A Analog Power AM5829P o MOSFET SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain CurrentA ID(on) Drain-Source On-State ResistanceA VDS = 0 V, VGS = +/-8 V ±100 VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 55oC -10 VDS = -5 V, VGS = -4.5 V rDS(on) -0.4 nA uA -5 A VGS = -4.5 V, ID = -3.6 A 0.110 VGS = -2.5 V, ID = -3.0 A 0.160 Ω Forward TranconductanceA gfs VDS = -5 V, ID = -3.6 A 3 S Diode Forward Voltage VSD IS = -1.6 A, VGS = 0 V -0.70 V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time 6.0 VDS = -5 V, VGS = -4.5 V, nC 0.80 ID = -3.6 A 1.30 6.5 tr VDD = -5 V, RL = 5 OHM, 20 td(of f) VGEN = -4.5 V, RG = 6 OHM 31 ns 21 tf o SCHOTTKY SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Maximum Reverse Leakage Current Symbol VF Test Conditions Min Limits Unit Typ Max IF = 0.5 A 0.48 V IF = 0.5 A, TJ = 125 C 0.4 V Vr = 30 V 0.1 o o Irm Vr = 30 V, TJ = 75 C 1 o Vr = 30 V, TJ = 125 C Junction Capacitance CT Vr = 10 V mA 10 31 pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM5829_A Analog Power AM5829P Typical Electrical Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with with Temperature Gate to Source Voltage Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics 3 PRELIMINARY Publication Order Number: DS-AM5829_A Analog Power AM5829P Typical Electrical Characteristics Figure 7. Gate Charge Characteristic Figure 8. Capacitance Characteristic Figure 10. Single Pulse Maximum Power Figure 9. Maximum Safe Operating Area Dissipation Normalized Thermal Transient Junction to Ambient 4 PRELIMINARY Publication Order Number: DS-AM5829_A Analog Power AM5829P Package Information 5 PRELIMINARY Publication Order Number: DS-AM5829_A