AMD540CE Analog Power P & N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • 40 -40 ID (A) 46 @ VGS = 4.5V 36 @ VGS = 10V 48 @ VGS = -4.5V 38 @ VGS = -10V 28 33 -28 -33 D1 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology G G 1 S S1 G1 D S2 G2 S 2 2 D2 1 N-Channel MOSFET P-Channel MOSFET ESD Protected 2000V o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter Drain-Source Voltage 40 -40 VDS V Gate-Source Voltage 20 -20 VGS a o TA=25 C ID Continuous Drain Current b Pulsed Drain Current a Continuous Source Current (Diode Conduction) a 33 -33 IDM ±40 ±40 IS 30 -30 50 50 o TA=25 C PD Power Dissipation Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a RθJA RθJC -55 to 175 A A W -55 to 175 Maximum o C Units 50 o 3.0 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AMD540CE_F AMD540CE Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain CurrentA ID(on) Drain-Source On-ResistanceA Forward TranconductanceA rDS(on) gfs VGS = VDS, ID = 250 uA N 1 VGS = VDS, ID = -250 uA VGS = -20 V, VDS = 0 V VGS = 20 V, VDS = 0 V VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 33 A VGS = 4.5 V, ID = 28 A VGS = -10 V, ID = -33 A VGS = -4.5 V, ID = -28 A VDS = 15 V, ID = 33 A VDS = -15 V, ID = -33 A P P N P N N P -1 V ±100 ±100 -1 1 20 -50 nA uA A 36 46 38 48 N P N P 40 31 N P N P N 12 13 3.3 5.8 4.5 P 12 N P N P 20 15 9 16 70 62 20 46 mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd N-Channel VDS=15V, VGS=4.5V, P-Channel ID=33A VDS=-15V, VGS=-4.5V, ID=-33A nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf N-Chaneel VDD=15V, VGS=10V, ID=1A , RGEN=25Ω, P-Channel VDD=-15V, VGS=-10V, ID=-1A RGEN=15Ω N P N P nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AMD540CE_F AMD540CE Analog Power Typical Electrical Characteristics (N-Channel) 50 60 ID - Drain Current (A) ID - Drain Current (A) T A = -55oC 40 50 4V 40 25oC 45 6V 10V 30 20 3V 125oC 35 30 25 20 15 10 10 5 0 0 0.5 1 1.5 2 2.5 0 3 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics 0.2 8 9 Ciss, Coss and Crss measurement of AM4541C Die1 NMOS 0.18 0.16 900 800 0.14 0.12 Capacitance (nC) rDS(ON) - On-resistance(ohm) 5 6 7 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 4.5V 0.1 0.08 0.06 0.04 10V 0.02 700 600 500 400 Ciss Coss 300 200 Crss 100 0 0 0 5 10 15 20 25 30 35 0 40 5 10 ID - Drain Current (A) On Resistance vs. Drain Current 10 20 Capacitance 1.8 VD= 15V ID= 6.5A VGS = 10V r DS(ON) - On-Resistance (Ohm) (Normalized) 8 VGS(V) 15 Vds(V) 6 4 2 0 1.6 1.4 1.2 1 0.8 0.6 0 2 4 6 8 10 QG, Total Gate Charge (nC) 12 -50 Gate Charge 0 25 50 75 100 o T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AMD540CE_F 125 150 AMD540CE Analog Power Typical Electrical Characteristics (N-Channel) 0.05 0.045 rDS(on) - On-Resistance (Ohm) IS - Source CURRENT (A) 100 10 1 T A = 125oC 0.1 25oC 0.01 0.001 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 0.0001 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 P(pk), PEAK TRANSIENT POWER (W) 4.7 ID = 250µA 4.5 V GS(th) Variance (V) 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 -50 -25 0 25 50 75 100 125 150 40 30 20 10 0 0.001 o TJ - Temperature ( C) Threshold Voltage SINGLE PULSE RqJA = 125oC/W TA = 25oC 0.01 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 0.2 0.1 0.1 Rq J A (t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.0 P(p k) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t ) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 t1, TIM E (s e c ) 1 10 100 1000 Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AMD540CE_F AMD540CE Analog Power Typical Electrical Characteristics (P-Channel) 60 60 4.5V 6V through 10V 50 4V ID Drain Current (A) IDS Drain Current (A) 50 40 40 20 25C 30 3.5V 30 20 3V 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 1 2 3 4 5 6 VGS Gate to Source Voltage (V) VDS(V) Output Characteristics Transfer Characteristics 2400 0.1 Ciss 2000 0.08 0.07 Capacitance (pF) RDS(ON) resistance ( Ω) 2200 4.5V 0.09 6V 0.06 0.05 10V 0.04 0.03 1800 1600 1400 1200 1000 Coss 800 600 400 0.02 Crs 200 0.01 0 0 0 0 10 20 30 40 50 5 60 10 15 20 VDS (V) ID Drain Current (A) On Resistance Vs Vgs Voltage Capacitance 1.6 10 VD= 10V ID= 10A VGS = - 10V rDS(ON) - On-Resistance (Ohm) (Normalized) 1.5 1.4 8 VGS (V) 1.3 1.2 6 1.1 4 1 0.9 2 0.8 0.7 0 0.6 0 5 10 15 20 25 30 -50 QG, Total Gate Charge (nC) 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AMD540CE_F 150 AMD540CE Analog Power Typical Electrical Characteristics (P-Channel) 0.1 0.09 RDS(ON) Resistance (Ω) 100 IS - Source Current (A) 10 T A = 125oC 1 25oC 0.1 0.01 0.001 Id=10A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0 V SD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance with Gate to Source Voltage 2 P(pk), PEAK TRANSIENT POWER (W) 50 ID = -250µA 1.9 V GS(th) Variance (V) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 -25 0 25 50 75 100 125 150 o SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature ( C) t1, TIME (sec) Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 D =0.5 0.2 Rq J A(t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.1 0.05 P (pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (s ec) Figure 11. Transient Thermal Response Curve 6 PRELIMINARY Publication Order Number: DS-AMD540CE_F AMD540CE Analog Power 7 PRELIMINARY Publication Order Number: DS-AMD540CE_F