Analog Power AM4512AC P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 @ VGS = 4.5V 30 80 @ VGS = -4.5V -30 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 5.0 -4.2 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter 30 -30 Drain-Source Voltage VDS V VGS ±12 ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 5.0 -5.2 4.1 -6.8 IDM 20 -20 IS 1.3 -1.3 2.1 2.1 1.3 1.3 ID o TA=25 C a Power Dissipation o TA=70 C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Steady-State A W o -55 to 150 Symbol t <= 10 sec A RθJA Maximum C Units 62.5 o 110 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4512A_F Analog Power AM4512AC o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current A Drain-Source On-ResistanceA Forward TranconductanceA ID(on) rDS(on) gfs VGS = VDS , ID = 250 uA N 0.6 VGS = VDS , I D = -250 uA VGS = -20 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, I D = 5.0 A VGS = -4.5 V, I D = -4.2 A VDS = 15 V, ID = 5.0 A VDS = -15 V, ID = -5.2 A P P N P N N P N P N P -1.0 N-Channel VDS=15V, VGS=4.5V, ID=5.0A P-Channel VDS =-15V, VGS =-4.5V, ID=-5.2A N P N P N 6.3 10 0.9 2.2 1.9 P N P N P N P N P 1.7 7.4 10 4 2.8 22.2 53.6 3.6 46 V ±100 ±100 -1 1 20 -20 nA uA A 60 80 25 10 mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time tr td(off) tf N-Chaneel VDD =15V, VGS =4.5V, ID=1A , RGE N =6Ω, P-Channel VDD=-15V, VGS =-4.5V, ID=-1A RGEN=6Ω nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4512A_F Analog Power AM4512AC Typical Electrical Characteristics (N-Channel) 20 30 TA = -55oC 25oC 25 15 ID - Drain Current (A) ID - Drain Current (A) 4.5V 2.5V 10 5 125oC 20 15 10 5 0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 1.5 2 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.5 2400 2000 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 3 Transfer Characteristics 1.4 1.2 4.5V 1 1600 CISS 1200 800 400 10V C OSS C RSS 0 0.8 0 5 10 15 20 0 25 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance r DS(ON) - On-Resistance (Normalized) 10 8 Vgs Voltage ( V ) 2.5 VGS - Gate-to-Source Voltage (V) 6 4 2 1.6 VGS = 4.5V 1.4 1.2 1 0.8 0.6 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (oC) Gate charge ( nC ) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY Publication Order Number: DS-AM4512A_F 150 Analog Power AM4512AC Typical Electrical Characteristics (N-Channel) 100 0.07 rDS(ON) - On-Resistance (OHM) IS - Source CURRENT (A 10 TA = 125oC 1 o 25 C 0.1 0.01 0.001 0.06 0.05 0.04 0.03 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0.01 1.4 2 VSD - Source-to-DrainVoltage (V) 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 1.8 ID = 250µA 20 Power (W) 1.4 1.2 1 0.8 10 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 TJ - Temperature (oC) 1 10 Time (sec) Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal VGS(th) - Variance (V) 1.6 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM4512A_F 100 Analog Power AM4512AC Typical Electrical Characteristics (P-Channel) 30 15 -6.0V o VDS = -5V -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 20 -4.0V 10 o TA = -55 C 25 C 12 o 125 C 9 6 3 -3.0V 0 0 0 1 2 3 4 5 1 6 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 3.5 4 4.5 with Source Current and Temperature 800 2 f = 1 MHz VGS = 0 V 700 1.8 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 Figure 2. Body Diode Forward Voltage Variation Figure 1. On-Region Characteristics 1.6 -4.5V -6.0V 1.4 1.2 -10V 1 CISS 600 500 400 300 COSS 200 100 0.8 0 6 12 18 24 CRSS 0 30 0 5 -ID, DRAIN CURRENT (A) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 10 1.6 ID = -5.7A VGS = 10V ID = 5.7A 1.4 8 -15V Normalized RDS(on) -VGS, GATE-SOURCE VOLTAGE (V) 2 -VGS, GATE TO SOURCE VOLTAGE (V) 6 4 2 1.2 1.0 0.8 0.6 0 0 2 4 6 8 -50 10 0 25 50 75 100 125 150 TJ Juncation Temperature (C) Qg, GATE CHARGE (nC) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM4512A_F Analog Power AM4512AC 0.25 100 ID = -5.7A VGS =0V 10 RDS(ON), ON-RESISTANCE (OHM) -IS, REVERSE DRAIN CURRENT (A) Typical Electrical Characteristics (P-Channel) o TA = 125 C 1 0.1 o 25 C 0.01 0.001 0.0001 0 0.2 0.15 0.1 0.05 TA = 25oC 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. On-Resistance with Gate to Source Voltage 50 VDS = VGS ID = -250mA 2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 2.2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (oC) SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Vth Gate to Source Voltage Vs Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 D =0.5 0.2 Rq J A(t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.1 0.05 P (pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (s ec) Figure 11. Transient Thermal Response Curve 6 PRELIMINARY Publication Order Number: DS-AM4512A_F Analog Power AM4512AC Package Information SO-8: 8LEAD H x 45° 7 PRELIMINARY Publication Order Number: DS-AM4512A_F