IRF 50RIA160S90M

Bulletin I2401 rev. B 01/05
50RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1000V/µs option
50 A
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V DRM/ V RRM
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
10 to 120
IT(AV)
I2t
50
A
@ TC
94
90°C
80
80
A
@ 50Hz
1430
1200
A
@ 60Hz
1490
1257
A
@ 50Hz
10.18
7.21
KA2s
@ 60Hz
9.30
6.58
KA2s
V DRM /V RRM
tq
Units
50
IT(RMS)
ITSM
50RIA
140 to 160
100 to 1200
typical
TJ
Document Number: 93711
1400 to 1600
V
110
µs
- 40 to 125
°C
Case Style
TO-208AC (TO-65)
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50RIA Series
Bulletin I2401 rev. B 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
V DRM /V RRM , max. repetitive
VRSM , maximum non-
I DRM/I RRM max.
Code
peak and off-state voltage (1)
V
repetitive peak voltage (2)
V
@ TJ = TJ max.
10
100
150
50RIA
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
mA
15
120
1200
1300
140
1400
1500
160
1600
1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with tp ≤ 5ms
On-state Conduction
Parameter
IT(AV)
50RIA
10 to 120
140 to 160
Units
Max. average on-state current
50
50
A
@ Case temperature
94
90
°C
Conditions
180° sinusoidal conduction
IT(RMS)
Max. RMS on-state current
80
80
A
ITSM
Max. peak, one-cycle
1430
1200
A
non-repetitive surge current
1490
1257
t = 8.3ms
reapplied
1200
1010
t = 10ms
100% VRRM
I2t
Maximum I2t for fusing
1255
1057
10.18
7.21
9.30
t = 10ms
No voltage
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = TJ max.
6.58
t = 8.3ms
reapplied
7.20
5.10
t = 10ms
100% VRRM
t = 8.3ms
reapplied
KA2s
6.56
4.65
I2√t
Maximum I2√t for fusing
101.8
72.1
KA2√s
VT(TO)1
Low level value of threshold
0.94
1.02
V
1.08
1.17
4.08
4.78
3.34
3.97
1.60
1.78
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
VT(TO)2 High level value of threshold
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
voltage
rt1
Low level value of on-state
mΩ
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
rt2
High level value of on-state
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
slope resistance
VTM
Max. on-state voltage
IH
Maximum holding current
200
V
mA
Ipk= 157 A, TJ = 25°C
TJ = 25°C. Anode supply 22V, resistive load,
Initial IT = 2A
IL
Latching current
Document Number: 93711
400
Anode supply 6V, resistive load
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50RIA Series
Bulletin I2401 rev. B 01/05
Switching
Parameter
di/dt
current
td
50RIA
Units
Max. rate of rise of turned-on
VDRM ≤ 600V
200
VDRM ≤ 1600V
100
ITM = (2x rated di/dt) A
0.9
TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit
Typical delay time
A/µs
µs
tq
Conditions
TC = 125°C, VDM = rated VDRM
Typical turn-off time
110
Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max.
Gate pulse = 10V, 15Ω source, tp = 20µs
TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, VR=50V
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
50RIA
200
500 (*)
Units Conditions
V/µs
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM
Maximum peak gate power
50RIA
PG(AV) Maximum average gate power
2.5
IGM
Max. peak positive gate current
2.5
+VGM
Maximum peak positive
gate voltage
-VGM
W
TJ = TJ max, t p ≤ 5ms
A
20
V
Maximum peak negative
gate voltage
IGT
Units Conditions
10
10
DC gate current required
250
to trigger
100
50
TJ = 125°C
DC gate voltage required
3.5
TJ = - 40°C
to trigger
2.5
V
IGD
DC gate current not to trigger
5.0
mA
VGD
DC gate voltage not to trigger
0.2
V
VGT
Document Number: 93711
TJ = - 40°C
mA
TJ = 25°C
Max. required gate trigger current/voltage are the lowest
value which will trigger all
units 6V anode-to-cathode
applied
TJ = 25°C
Max. gate current/ voltage not to
TJ = TJ max
VDRM = rated voltage trigger is the max. value which
will not trigger any unit with rated
TJ = TJ max
VDRM anode-to-cathode applied
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50RIA Series
Bulletin I2401 rev. B 01/05
Thermal and Mechanical Specification
Parameter
50RIA
Units Conditions
TJ
Max. operating temperature range
- 40 to 125
Tstg
Max. storage temperature range
- 40 to 125
°C
0.35
K/W
DC operation
0.25
K/W
Mounting surface, smooth, flat and greased
RthJC Max. thermal resistance,
°C
junction to case
RthCS Max. thermal resistance,
case to heatsink
T
Allowable mounting torque
wt
3.4 +0-10%
Nm
30
lbf-in
2.3 +0-10%
Nm
20
lbf-in
28 (1.0)
g (oz)
Approximate weight
Case style
TO-208AC (TO-65)
Not lubricated threads
Lubricated threads
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction Units
180°
0.078
0.057
120°
0.094
0.098
90°
0.120
0.130
60°
0.176
0.183
30°
0.294
0.296
K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
50
1
RIA 160 S90
2
3
4
M
5
1
-
Current code
2
-
Essential part number
3
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
4
-
Critical dv/dt: None = 500V/µs (Standard value)
S90
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
Document Number: 93711
= 1000V/µs (Special selection)
= Stud base TO-208AC (TO-65) M6 X 1
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50RIA Series
Bulletin I2401 rev. B 01/05
Outline Table
Case Style TO-208AC (TO-65)
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
All dimensions in millimeters (inches)
50RIA Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
0
10
20
30
40
50
60
130
50RIA Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
120
110
Conduction Period
100
90
30°
80
0
10
20
60°
30
90°
120°
40
180°
50
60
DC
70
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
Document Number: 93711
80
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50RIA Series
180°
120°
90°
60°
30°
70
60
50
RMS Limit
40
30
Conduction Angle
20
50RIA Series
(100V to 1200V)
TJ = 125°C
10
0
0
10
20
30
40
50
DC
180°
120°
90°
60°
30°
90
80
70
60
50
RMS Limit
40
30
Conduction Period
20
50RIA Series
(100V to 1200V)
TJ = 125°C
10
0
0
30
40
50
60
70
80
Average On-state Current (A)
1100
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
50RIA Series
(100V to 1200V)
1
10
1500
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
1400
1300
1200
1100
1000
900
800
700
50RIA Series
(100V to 1200V)
600
500
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
50RIA Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W
120
110
Conduction Angle
30°
100
60°
90°
120°
180°
90
0
5 10 15 20 25 30 35 40 45 50 55
Average On-state Current (A)
Fig. 7 - Current Ratings Characteristics
Document Number: 93711
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case Temperature (°C)
130
0.1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case Temperature (°C)
20
Fig. 4 - On-state Power Loss Characteristics
1200
80
10
Average On-state Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
600
100
Fig. 3 - On-state Power Loss Characteristics
1300
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
80
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I2401 rev. B 01/05
130
50RIA Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W
120
110
Conduction Period
100
90
30°
80
0
90°
60° 120°
180°
10 20 30 40
DC
50 60 70
80 90
Average On-state Current (A)
Fig. 8 - Current Ratings Characteristics
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50RIA Series
180°
120°
90°
60°
30°
80
70
60
50
RMS Limit
40
30
Conduction Angle
20
50RIA Series
(1400V to 1600V)
TJ = 125°C
10
0
0
5
Peak Half Sine Wave On-state Current (A)
10 15 20 25 30 35 40 45 50
120
DC
180°
120°
90°
60°
30°
110
100
90
80
70
60
RMS Limit
50
40
Conduction Period
30
50RIA Series
(1400V to 1600V)
TJ = 125°C
20
10
0
0
20
30
40
50
60
70
80
Average On-state Current (A)
Fig. 9 - On-state Power Loss Characteristics
Fig. 10 - On-state Power Loss Characteristics
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
50RIA Series
(1400V to 1600V)
1
10
1200
100
1000
900
800
700
600
500
50RIA Series
(1400V to 1600V)
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
1000
100
TJ = 25°C
TJ = 125°C
10
50RIA Series (100V to 1200V)
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Current (A)
1000
1
0.5
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
1100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous On-state Current (A)
10
Average On-state Current (A)
1100
500
Maximum Average On-state Power Loss (W)
90
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I2401 rev. B 01/05
100
TJ = 25°C
10
TJ = 125°C
50RIA Series (1400V to 1600V)
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
Document Number: 93711
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50RIA Series
Transient Thermal Impedance ZthJ-hs (K/W)
Bulletin I2401 rev. B 01/05
1
Steady State Value
RthJ-hs = 0.35 K/W
0.1
50RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 µs
10
(b)
(a)
Tj=125 °C
1
VGD
IGD
0.1
0.001
0.01
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
Tj=-40 °C
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1) (2)
50RIA Series
0.1
1
(3) (4)
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
Document Number: 93711
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Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
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Document Number: 99901
Revision: 12-Mar-07
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