Product specification 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -0.8 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-base breakdown voltage VCBO IC = -1mA, IE = 0 -35 Typ Max Unit V Collector-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -30 V Emitter-base breakdown voltage VEBO IE = -1mA, IC = 0 -5 V Collector-base cutoff current ICBO VCB = -35 V, IE = 0 Emitter cutoff current IEBO DC current gain hFE Collector-emitter saturation voltage VEB=-5V,IC=0 VCE = -1V, IC = -100 mA 100 VCE = -1 V, IC = -700 mA 35 -0.1 A -0.1 A 320 VCE(sat) IC = -500 mA, IB = -20 mA -0.7 V V VBE VCE=-1V,IC=-10mA Collector output capacitance Cob VCB = -10V, IE = 0, f = 1 MHz 120 MHz VCE = -5V, IC=-10mA 19 pF Transition frequency fT -0.5 -0.8 Base emitter voltage hFE Classification Marking RO RY Rank O Y hFE 100 200 http://www.twtysemi.com 160 320 [email protected] 4008-318-123 1 of 1