Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE(sat).VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V Collector current IC -0.8 A Collector power dissipation PC 0.2 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Collector-base breakdown voltae VCBO IC = -50 Collector-emitter breakdown voltage VCEO IC = -1mA Emitter-base breakdown voltage VEBO IE = -50 Collector cutoff current ICBO VCB = -20V -0.5 IEBO VEB = -4V -0.5 Emitter cutoff current Collector-Emitter Saturation Voltage A A Unit -40 V -32 V -5 V VCE(sat) IC = -0.5A , IB = -50mA -0.5 DC current transfer ratio hFE VCE = -3V , IC = -100mA 120 Output Capacitance Cob VCB = -10V , IE = 0A , f = 1MHz 12 Transition frequency fT VCE = -5V , IE = 50mA , f = 100MHz 200 A A V 390 30 pF MHz hFE Classification Marking AHQ AHR Rank Q R hFE 120 270 http://www.twtysemi.com 180 390 [email protected] 4008-318-123 1 of 1