Product specification 2SA1037 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity. 2 PNP silicon transistor +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-50 -60 V Collector-emitter breakdown voltage VCEO IC=-1mA -50 V Emitter-base breakdown voltage VEBO IE=-50ìA -6 V Collector cutoff current ICBO VCB=-60V -0.1 A Emitter cutoff current IEBO VEB=-6V -0.1 A VCE(sat) IC/IB=-50mA/-5mA -0.5 Collector-emitter saturation voltage A DC current Gain hFE VCE=-6V, IC=-1mA Output capacitance Cob VCB=-12V, IE=0A, f=1MHz 120 4.0 Transition frequency fT VCE=-12V, IE=2mA, f=30MHz 140 V 560 5.0 pF MHz ■ hFE Classification Marking FQ FR FS Rank Q R S hFE 120～270 180～390 270～560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1