Product specification 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V IC -1 A Collector current ICP * -1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 peak collector current * PW 10 ms; d 0.02. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -25 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -20 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Collector cutoff current ICBO VCB = -20 V, IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4 V, IC = 0 -0.1 ìA DC current transfer ratio * hFE VCE = -2 V, IC = -0.5 A 85 240 Collector to emitter saturation voltage * VCE(sat) IC = -0.8 A, IB = -0.08 A -0.2 -0.3 V Base to emitter saturation voltage * VBE(sat) IC = -0.8 A, IB = -0.08 A -0.94 -1.1 V Gain bandwidth product fT Collector output capacitance Cob VCE = -2 V, IC = -0.15 A 200 MHz VCB = -10 V, IE = 0 f=1MHz 38 pF hFE Classification Marking AH AJ hFE 85 170 120 240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1