万和兴电子有限公司 www.whxpcb.com AO4454 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4454 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V 6.5A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 36mΩ RDS(ON) (at VGS = 7V) < 43mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±25 V 6.5 ID TA=70°C Maximum 100 5.3 A IDM 46 Avalanche Current C IAS, IAR 28 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 39 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev1: November 2010 3.1 PD TA=70°C Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 2 RθJA RθJL www.aosmd.com Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4454 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 46 TJ=55°C 50 100 VGS=10V, ID=6.5A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=6.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=7V, ID=6A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge Units 3.4 4 µA nA V A 30 36 56 67 35.5 43 mΩ 1 V 4 A 20 0.68 mΩ S 950 1180 1450 pF 77 110 145 pF 21 36 50 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.7 1.05 Ω 15 19 23 nC VGS=10V, VDS=50V, ID=6.5A 5.5 7 8.5 nC 3.5 6.3 9 nC VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Max V VDS=100V, VGS=0V IDSS Crss Typ tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=500A/µs 11 16 21 Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=500A/µs 35 50 65 10 VGS=10V, VDS=50V, RL=6.7Ω, RGEN=3Ω ns 7.2 ns 15 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: November 2010 www.aosmd.com Page 2 of 6 AO4454 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V VDS=5V 8V 50 40 7V ID(A) ID (A) 40 30 20 20 125°C 6V 25°C 10 VGS=5V 0 0 0 1 2 3 4 3 5 4 2.2 55 2 Normalized On-Resistance 60 RDS(ON) (mΩ ) 50 VGS=7V 40 35 6 7 8 9 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 45 5 VGS=10V 30 25 VGS=10V ID=6.5A 1.8 17 5 2 VGS=4.5V10 1.6 1.4 1.2 ID=6A 1 0.8 20 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 68 1.0E+02 ID=6.5A 1.0E+01 60 40 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 52 125°C 44 1.0E-01 1.0E-02 36 25°C 1.0E-03 28 1.0E-04 25°C 1.0E-05 20 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: November 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4454 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 Ciss 1200 Capacitance (pF) VGS (Volts) 1400 VDS=50V ID=6.5A 8 6 4 1000 800 600 400 Crss 2 Coss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10 20 30 40 50 60 70 80 90 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000.0 IAR (A) Peak Avalanche Current 100 ID (Amps) 100.0 TA=100°C TA=25°C 10.0 RDS(ON) limited 100µs 1.0 1ms TJ(Max)=150°C TA=25°C 0.1 TA=150°C TA=125°C 10µs 10ms 10s DC 0.0 10 0.01 0.00001 0.0001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) 0.000001 100 1000 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 1: November 2010 www.aosmd.com Page 4 of 6 AO4454 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 30 25 120 25ºC 15 Qrr 125ºC 60 10 Irm 30 25ºC 5 0 0 0 5 10 15 20 25 3 di/dt=800A/µs 30 0 125ºC Qrr 10 5 Irm 0 0 200 400 600 800 25 30 Is=20A 2 40 18 1.5 25ºC S 15 12 1 25ºC 6 0.5 S 125º 0 1000 di/dt (A/µ µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: November 2010 20 125ºC 3 0 15 trr 9 25ºC 30 trr (ns) 60 10 2.5 21 Irm (A) Qrr (nC) 15 5 27 20 90 0.5 S 24 25ºC 1 25ºC 30 25 120 1.5 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 125ºC Is=20A 2 125ºC IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 150 2.5 trr 0 30 125ºC 25ºC trr (ns) 20 90 Irm (A) Qrr (nC) 24 22 20 18 16 14 12 10 8 6 4 2 0 125ºC di/dt=800A/µs S 150 www.aosmd.com 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 5 of 6 AO4454 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: November 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6