WHXPCB AO4304

万和兴电子有限公司 www.whxpcb.com
AO4304
30V N-Channel MOSFET
General Description
Product Summary
The AO4304 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
30V
18A
RDS(ON) (at VGS=10V)
< 6.0mΩ
RDS(ON) (at VGS = 4.5V)
< 7.6mΩ
VDS
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±20
V
18
ID
TA=70°C
Maximum
30
14
A
IDM
200
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
61
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Oct 2010
3.6
PD
TA=70°C
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2.3
RθJA
RθJL
www.aosmd.com
Typ
27
52
12
°C
Max
35
65
15
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4304
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
100
nA
1.9
2.4
V
4.1
6
6.5
9.5
VGS=4.5V, ID=10A
5
7.6
mΩ
1
V
5
A
VGS=10V, ID=15A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=15A
90
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate-Body leakage current
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
1275
1598
1920
pF
VGS=0V, VDS=15V, f=1MHz
215
308
400
pF
90
154
215
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
Ω
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19
24
29
Qg(4.5V) Total Gate Charge
8.5
11.1
14
nC
4
5.2
6.5
nC
3
5.6
8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=15A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=15A, dI/dt=500A/µs
7
9.5
12
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
14
17.5
21
VGS=10V, VDS=15V, RL=1Ω,
=1Ω,
RGEN=3Ω
7.3
ns
3
ns
25
ns
ns
5.3
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct 2010
www.aosmd.com
Page 2 of 6
AO4304
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
VDS=5V
4.5V
3.5V
60
ID(A)
ID (A)
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
8
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
2.2
VGS=4.5V
6
4
VGS=10V
2
2
VGS=10V
ID=15A
1.8
17
5
2
10
=4.5V
1.6
1.4
1.2
VGS
ID=10A
1
0.8
0
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
16
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
ID=15A
14
1.0E+01
40
12
1.0E+00
10
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
8
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
4
2
1.0E-04
25°C
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct 2010
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4304
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
2000
VDS=15V
ID=15A
6
Capacitance (pF)
VGS (Volts)
8
4
2
Ciss
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
30
1000.0
TA=100°C
100
100.0
TA=25°C
ID (Amps)
IAR (A) Peak Avalanche Current
1000
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
TA=125°C
10
10.0
1ms
RDS(ON)
limited
10ms
10ms
1.0
TA=150°C
DC
TJ(Max)=150°C
TA=25°C
0.1
10s
0.0
1
1
10
100
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability
(Note C)
0.01
1000
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: Oct 2010
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Page 4 of 6
AO4304
万和兴电子有限公司 www.whxpcb.com
Zθ JA Normalized Transient
Thermal Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct 2010
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Page 5 of 6
AO4304
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Oct 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6