WHXPCB AO4402

万和兴电子有限公司 www.whxpcb.com
AO4402
20V N-Channel MOSFET
General Description
Product Summary
The AO4402 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
20V
20A
RDS(ON) (at VGS=4.5V)
< 5.5mΩ
RDS(ON) (at VGS=2.5V)
< 7mΩ
VDS
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±12
V
20
ID
TA=70°C
Maximum
20
16
A
140
IDM
Avalanche Current C
IAS, IAR
57
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
162
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: Nov 2010
3.1
PD
TA=70°C
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
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Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4402
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
100
nA
1
1.6
V
4.6
5.5
5.8
7
VGS=2.5V, ID=18A
5.5
7
mΩ
1
V
4
A
VGS=4.5V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
105
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate-Body leakage current
Units
V
1
IGSS
Coss
Max
20
VDS=20V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=10V, ID=20A
mΩ
S
3080
3860
4630
pF
520
740
960
pF
350
580
810
pF
0.6
1.4
2.1
Ω
28
36
43
nC
7
9
11
nC
7
12
17
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
17
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29
36
43
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
7
ns
8
ns
70
ns
18
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.Maximum avalanche current limited by tester capability.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov 2010
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Page 2 of 6
AO4402
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
VDS=5V
80
60
ID(A)
ID (A)
60
40
40
125°C
20
0
0
0
1
2
3
4
0.5
5
10
1.5
2
2.5
Normalized On-Resistance
1.4
8
VGS=2.5V
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=4.5V
2
1.2
17
5
2
10
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
0
18
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
10
1.0E+02
ID=20A
9
1.0E+01
40
1.0E+00
8
7
IS (A)
RDS(ON) (mΩ )
25°C
20
125°C
1.0E-01
6
1.0E-02
5
1.0E-03
1.0E-04
4
25°C
1.0E-05
3
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Nov 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4402
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
Capacitance (pF)
VGS (Volts)
6000
VDS=10V
ID=20A
8
6
4
2
5000
4000
3000
2000
Coss
1000
Crss
0
0
0
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
1000.0
100.0
ID (Amps)
IAR (A) Peak Avalanche Current
5
100.0
10.0
1.0
10ms
0.1
0.0
10.0
0.01
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
10
100
VDS (Volts)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 1: Nov 2010
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Page 4 of 6
AO4402
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Nov 2010
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Page 5 of 6
AO4402
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Nov 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6