AOSMD AO4854

AO4854
30V Dual N-channel MOSFET
General Description
Product Summary
The AO4854 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters.
ID (at VGS=10V)
30V
8A
VDS
RDS(ON) (at VGS=10V)
<19mΩ
RDS(ON) (at VGS = 4.5V)
< 23mΩ
RDS(ON) (at VGS = 4V)
< 26mΩ
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G
G
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Avalanche Current C
C
Avalanche energy L=0.1mH
TA=25°C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev3 : Nov 2010
Steady-State
Steady-State
V
6.5
A
48
IAS, IAR
19
A
EAS, EAR
18
mJ
2
W
1.3
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
±20
IDM
PD
TA=70°C
Units
V
8
ID
TA=70°C
Maximum
30
RθJA
RθJL
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Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4854
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
10
VGS=10V, ID=8A
Units
1.8
2.4
µA
V
A
15.5
19
21
25
VGS=4.5V, ID=4A
18.5
23
mΩ
VGS=4V, ID=4A
20.5
26
mΩ
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
S
1
V
2.5
A
600
740
888
pF
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
2
2.5
3
nC
2
3
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=15V, ID=8A
5
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
ns
3.5
ns
19
ns
3.5
ns
6
8
10
14
18
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Nov 2010
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Page 2 of 6
AO4854
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
4V
25
VDS=5V
25
3.5V
20
ID(A)
ID (A)
20
15
3V
10
15
125°C
10
5
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ )
2
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
VGS=4V
5
ID=4A
1.2
2
10
VGS=4.5V
ID=4A
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
40
1.0E+02
ID=8A
35
1.0E+01
30
1.0E+00
25
IS (A)
RDS(ON) (mΩ )
40
125°C
125°C
1.0E-01
1.0E-02
20
25°C
1.0E-03
15
1.0E-04
25°C
10
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev3: Nov 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4854
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=30A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
400
Coss
200
Crss
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
100
TA=25°C
100.0
TA=100°C
10
ID (Amps)
IAR (A) Peak Avalanche Current
800
100µs
1.0
0.1
TA=125°C
TA=150°C
RDS(ON)
limited
10.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1
0.01
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
VDS (Volts)
0.000001
10
100
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev3: Nov 2010
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Page 4 of 6
AO4854
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev3: Nov 2010
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Page 5 of 6
AO4854
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev3: Nov 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6