AO4854 30V Dual N-channel MOSFET General Description Product Summary The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. ID (at VGS=10V) 30V 8A VDS RDS(ON) (at VGS=10V) <19mΩ RDS(ON) (at VGS = 4.5V) < 23mΩ RDS(ON) (at VGS = 4V) < 26mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev3 : Nov 2010 Steady-State Steady-State V 6.5 A 48 IAS, IAR 19 A EAS, EAR 18 mJ 2 W 1.3 -55 to 150 TJ, TSTG Symbol t ≤ 10s ±20 IDM PD TA=70°C Units V 8 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4854 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C µA 5 VDS=0V, VGS= ±20V 10 VGS=10V, ID=8A Units 1.8 2.4 µA V A 15.5 19 21 25 VGS=4.5V, ID=4A 18.5 23 mΩ VGS=4V, ID=4A 20.5 26 mΩ Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 1 V 2.5 A 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, ID=8A 5 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs ns 3.5 ns 19 ns 3.5 ns 6 8 10 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Nov 2010 www.aosmd.com Page 2 of 6 AO4854 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V 25 VDS=5V 25 3.5V 20 ID(A) ID (A) 20 15 3V 10 15 125°C 10 5 5 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ ) 2 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 VGS=4V 5 ID=4A 1.2 2 10 VGS=4.5V ID=4A 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=8A 35 1.0E+01 30 1.0E+00 25 IS (A) RDS(ON) (mΩ ) 40 125°C 125°C 1.0E-01 1.0E-02 20 25°C 1.0E-03 15 1.0E-04 25°C 10 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev3: Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4854 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=30A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 Crss 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 100 TA=25°C 100.0 TA=100°C 10 ID (Amps) IAR (A) Peak Avalanche Current 800 100µs 1.0 0.1 TA=125°C TA=150°C RDS(ON) limited 10.0 1ms 10ms TJ(Max)=150°C TA=25°C 10s DC 0.0 1 0.01 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 0.000001 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev3: Nov 2010 www.aosmd.com Page 4 of 6 AO4854 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev3: Nov 2010 www.aosmd.com Page 5 of 6 AO4854 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev3: Nov 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6