WHXPCB AO4435

万和兴电子有限公司 www.whxpcb.com
AO4435
30V P-Channel MOSFET
General Description
Product Summary
The AO4435 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
VDS = -30V
ID = -10.5A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
-RoHS Compliant
-AO4435 is Halogen Free
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
Power Dissipation A
-30
Units
V
±25
V
Maximum
-10.5
TA=70°C
B
TA=25°C
ID
-8
IDM
-80
3.1
PD
TA=70°C
A
W
2.0
Avalanche Current B
IAR
-20
A
Repetitive avalanche energy 0.3mH B
EAR
60
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4435
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-30
Gate-Body leakage current
VDS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-80
VGS = -20V, ID = -11A
TJ=125°C
27
36
Maximum Body-Diode Continuous Current
mΩ
22
S
-0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
A
VGS = -5V, ID = -5A
IS
Rg
14
18
IS = -1A,VGS = 0V
Output Capacitance
11
15
VDS = -5V, ID = -10A
Reverse Transfer Capacitance
V
19
Forward Transconductance
Crss
nA
-3
15
Diode Forward Voltage
Coss
±100
-2.3
VGS = -10V, ID = -10A
VSD
µA
-5
Gate Threshold Voltage
gFS
Units
-1
TJ = 55°C
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS = -30V, VGS = 0V
IGSS
RDS(ON)
Typ
1130
VGS=0V, VDS=-15V, f=1MHz
-1
V
-3.5
A
1400
pF
240
pF
155
pF
5.8
8
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
18
24
nC
Qg(4.5V)
Total Gate Charge
9.5
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-10A
1
5.5
nC
Qgd
Gate Drain Charge
3.3
nC
tD(on)
Turn-On DelayTime
8.7
ns
tr
Turn-On Rise Time
8.5
ns
tD(off)
Turn-Off DelayTime
18
ns
tf
trr
Turn-Off Fall Time
7
ns
Body Diode Reverse Recovery Time
IF=-10A, dI/dt=100A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
12
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4435
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS= -5V
-10V
-8V
60
-6V
-ID(A)
-ID (A)
60
40
40
-4.5V
125°C
20
20
VGS= -4V
25°C
0
0
0
1
2
3
4
5
0
1
40
3
4
5
6
1.6
Normalized On-Resistance
VGS=-5V
35
30
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
25
20
VGS=-10V
15
10
VGS=-10V
ID=-10A
1.4
VGS=-20V
ID=-11A
1.2
1.0
VGS=-5V
ID=-5A
0.8
VGS=-20V
5
0.6
0
5
10
15
20
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
55
1E+01
ID=-11A
1E+00
45
35
-IS (A)
RDS(ON) (mΩ )
1E-01
25
125°C
1E-02
25°C
1E-03
125°C
1E-04
15
1E-05
25°C
1E-06
5
2
4
6
8
10
12
14
16
18
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4435
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
-VGS (Volts)
Capacitance (pF)
VDS=-15V
ID=-10A
8
6
4
2
Ciss
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
1000
100
30
TJ(Max)=150°C
TA=25°C
10µs
10
100µs
1
1ms
10ms
100ms
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
-ID (Amps)
25
1000
RDS(ON) limited
0.1
1
10
1
0.00001
10
100
-VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10s
DC
0.01
Zθ JA Normalized Transient
Thermal Resistance
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4435
万和兴电子有限公司 www.whxpcb.com
G ate C harge Test C ircuit & W aveform
Vgs
Qg
-10V
-
-
VD C
+
VD C
Qgd
Q gs
Vds
+
DUT
V gs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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