WHXPCB AO4446

万和兴电子有限公司 www.whxpcb.com
AO4446
30V N-Channel MOSFET
General Description
Product Summary
The AO4446 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications.
VDS (V) = 30V
ID = 15A (VGS = 10V)
RDS(ON) < 8.5mΩ (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
Maximum
30
Units
V
±20
V
15
TA=70°C
ID
12
Pulsed Drain Current B
IDM
40
Avalanche Current B
IAR
20
A
Repetitive avalanche energy L=0.1mH B
EAR
50
mJ
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
3
PD
TA=70°C
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2.1
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
RθJA
RθJL
Typ
33
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4446
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=15A
TJ=125°C
VGS=4.5V, ID=11A
gFS
Forward Transconductance
VDS=5V, ID=15A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
VGS(th)
RDS(ON)
Typ
100
nA
2.2
3
V
6.9
8.5
11
13.5
11.8
14.5
A
mΩ
mΩ
27
0.71
1520
VGS=0V, VDS=15V, f=1MHz
µA
S
1
V
4
A
1825
pF
306
pF
214
pF
0.47
0.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33.7
40
nC
Qg(4.5V) Total Gate Charge
17
20
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=15A
6.2
nC
10
nC
7.2
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=15A, dI/dt=100A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs
19
VGS=10V, VDS=15V, RL=1.0Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
8.2
ns
22
ns
6.7
ns
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 3: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4446
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10V
30
60
5V
4.5V
25
50
VDS=5V
VGS =4V
40
125°C
ID(A)
ID(A)
20
15
10
30
20
25°C
VGS =3.5V
5
10
0
0
1
2
3
4
0
5
1.5
VDS(Volts)
2
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
2
Normalized On-Resistance
16
VGS=4.5V
14
RDS(ON) (mΩ )
2.5
12
10
8
VGS=10V
6
1.8
VGS=10V
ID=15A
1.6
1.4
1.2
VGS=4.5V
ID=11A
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
20
1.0E+02
ID=15A
1.0E+01
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
16
12
1.0E-01
25°C
1.0E-02
1.0E-03
8
1.0E-04
25°C
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4446
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=15V
ID=15A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
Coss
2
500
0
0
Crss
0
5
10
15
20
25
30
35
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
30
80
RDS(ON)
limited
ID (Amps)
10
100µs
60
Power (W)
1ms
10ms
TJ(Max)=150°C
TA=25°C
10µs
0.1s
1s
1
10s
TJ(Max)=150°C
TA=25°C
20
DC
0.1
0.1
1
10
0
0.001
100
VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000