Datasheet

AO4418
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4418 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4418 is Pb-free (meets ROHS
& Sony 259 specifications).
VDS (V) = 30V
ID = 11.5A (VGS = 20V)
RDS(ON) < 14mΩ (VGS = 20V)
RDS(ON) < 17mΩ (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
S
S
G
D
D
D
D
D
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
TA=25°C
AF
Current
ID
TA=70°C
Pulsed Drain Current
Power Dissipation
Avalanche Current B
B
IDM
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
IAR
EAR
TJ, TSTG
Alpha & Omega Semiconductor, Ltd.
±25
11.5
9.7
40
A
W
A
mJ
60
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Units
V
V
3
2.1
20
PD
Repetitive avalanche energy 0.3mHB
Maximum
30
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4418
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
5
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
V
A
VGS=10V, ID=10A
12.3
17
mΩ
VGS=4.5V, ID=5A
32
40
mΩ
VDS=5V, ID=10A
14
22
0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
3
14
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Rg
nA
18
Forward Transconductance
Crss
100
9.8
VSD
Output Capacitance
2.4
µA
14.2
TJ=125°C
gFS
Coss
V
TJ=55°C
VGS=20V, ID=11.5A
IS
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
758
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=11.5A
VGS=10V, VDS=15V, RL=1.3Ω,
RGEN=3Ω
S
1
V
4.3
A
910
pF
180
0.3
mΩ
pF
128
180
pF
0.7
1.1
Ω
16.6
20
nC
8.6
nC
2.5
nC
4.9
nC
5.4
ns
5.1
ns
14.4
ns
3.7
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11.5A, dI/dt=100A/µs
16.9
Qrr
Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=100A/µs
6.6
22
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 6: July 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
10V
45
6V
35
ID (A)
25
7V
VDS=5V
20
5V
30
25
ID(A)
40
3.5V
20
15
125°C
10
15
10
VGS=3V
25°C
5
5
0
0
0
1
2
3
4
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
4
4.5
5
5.5
1.8
Normalized On-Resistance
40
VGS=4.5V
35
RDS(ON) (mΩ)
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
45
30
25
20
15
VGS=10V
10
VGS=20V
5
0
5
10
15
20
25
ID=10A
1.6
VGS=20V
1.2
1
0.8
30
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
50
1.0E+00
ID=10A
1.0E-01
IS (A)
40
VGS=10V
1.4
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
3
30
125°C
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
0
0
5
10
15
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=11.5A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
800
600
400
Coss
200
Crss
0
0
4
8
12
16
0
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
RDS(ON)
limited
100µs
1ms
1.0
TJ(Max)=150°C
TA=25°C
0.1s
DC
10s
10ms
1
10
30
20
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
30
10
VDS (Volts)
10
25
1s
0.1
0.1
20
TJ(Max)=150°C
TA=25°C
40
10µs
10.0
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4418
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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