WHXPCB AO4425

万和兴电子有限公司 www.whxpcb.com
AO4425
38V P-Channel MOSFET
General Description
Product Summary
The AO4425 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
VDS (V) = -38V
ID = -14A (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -20V)
RDS(ON) < 11mΩ (VGS = -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
A
Current
B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
±25
V
ID
-11
IDM
-50
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-14
TA=70°C
Pulsed Drain Current
Maximum
-38
RθJA
RθJL
Typ
26
50
14
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4425
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-38
-100
TJ=55°C
-500
±1
µA
±10
µA
VDS=VGS ID=-250µA
-2
On state drain current
VGS=-10V, VDS=-5V
-50
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
VGS=-20V, ID=-14A
Reverse Transfer Capacitance
Gate resistance
-2.5
10
13.5
VGS=-10V, ID=-14A
8.8
11
VDS=-5V, ID=-14A
43
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=-10V, VDS=-20V, ID=-14A
0.71
mΩ
mΩ
S
1
V
4.2
A
3800
pF
560
pF
350
pF
7.5
Ω
63
nC
14.1
nC
16.1
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-14A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs
33
VGS=-10V, VDS=-20V, RL=1.35Ω,
RGEN=3Ω
V
A
7.7
VGS=0V, VDS=-20V, f=1MHz
Body Diode Reverse Recovery Time
-3.5
11
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
nA
VDS=0V, VGS=±20V
Gate Threshold Voltage
Crss
Units
VDS=0V, VGS=±25V
VGS(th)
Output Capacitance
Max
V
VDS=-30V, VGS=0V
ID(ON)
Coss
Typ
12.4
ns
9.2
ns
97.5
ns
45.5
ns
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
-15
B: Repetitive rating, pulse width limited by junction temperature.
-12.8
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4425
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
20
25
20
-4.5V
-ID(A)
-ID (A)
VDS=-5V
-20V
-10V
-5V
25
-4V
15
15
125°C
-3.5V
10
25°C
10
5
5
VGS=-3V
0
0
1
2
3
4
0
5
2
2.5
-VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
1.6
VGS=-10V
9
RDS(ON) (mΩ )
3
8
VGS=-20V
7
VGS=-10V
ID = -14A
1.4
VGS=-20V
ID = -14A
1.2
1
0.8
6
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
1.0E+01
20
-12.8
ID=-14A
1.0E+00
125°C
-IS (A)
RDS(ON) (mΩ )
1.0E-01
15
125°C
10
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
1.0E-05
1.0E-06
5
4
8
12
16
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4425
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=-15V
ID=-14A
Ciss
4000
Capacitance (pF)
-VGS (Volts)
8
6
4
3000
2000
2
1000
0
0
Coss
Crss
0
10
20
30
40
50
60
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
70
0
20
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
40
10µs
RDS(ON)
limited
10
TJ(Max)=150°C
TA=25°C
100µs
30
1ms
Power (W)
-ID (Amps)
10.0
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
10
10s
DC
0.1
0.1
20
1
10
100
0
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
-15
10
Zθ JA Normalized Transient
Thermal Resistance
0.01
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
-12.8
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
T
0.001
0.01
1
10
Pulse 0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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