Ordering number : EN3094B 2SA1708/2SC4488 Bipolar Transistor http://onsemi.com (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP Features • • • Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Conditions Ratings Unit VCBO VCEO (--)120 V (--)100 V VEBO IC (--)6 V (--)1 A ICP PC (--)2 A 1 W Junction Temperature Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1708S-AN 2SA1708T-AN 2SC4488S-AN 2SC4488T-AN 1.0 4.5 1.0 1.45 Marking(NMP(Taping)) A1708 RANK C4488 LOT No. RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2.54 2 3 0.45 2.54 1 : Emitter 2 : Collector 3 : Base Electrical Connection 2 3 2 3 NMP(Taping) 1 2SA1708 1 2SC4488 Semiconductor Components Industries, LLC, 2013 September, 2013 82912 TKIM TC-00002802/22509EA MSIM TC-00001859/93003TN (KT)/83098HA(KT)/4249MO, TS No.3094-1/8 2SA1708 / 2SC4488 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings Conditions min typ 140* VCE=(--)10V, IC=(--)100mA max (--)100 nA (--)100 nA 400* 120 MHz (13)8.5 IC=(--)400mA, IB=(--)40mA Unit pF (--0.2)0.1 (--0.6)0.4 (--)0.85 (--)1.2 V V V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V (80)80 ns (700)850 ns (40)50 ns * : The 2SA1708/2SC4488 are classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1708 2SC4488 IB1 IB1 IB2 IB2 OUTPUT INPUT PW=20μs D.C.≤1% VR RB + 50Ω 100μF VBE=5V RL + OUTPUT INPUT PW=20μs D.C.≤1% VR RB + 50Ω 470μF 100μF VCC= --50V IC=10IB1= --10IB2= --400mA VBE= --5V RL + 470μF VCC=50V IC=10IB1= --10IB2=400mA Ordering Information Package Shipping 2SA1708S-AN Device NMP(Taping) 2,500pcs./box 2SA1708T-AN NMP(Taping) 2,500pcs./box 2SC4488S-AN NMP(Taping) 2,500pcs./box 2SC4488T-AN NMP(Taping) 2,500pcs./box memo Pb Free No.3094-2/8 2SA1708 / 2SC4488 IC -- VCE 2SA1708 mA mA mA --10 A 5m --2 0m --5mA --3 --3mA --0.4 --2mA --1mA --0.2 --1 --2 --3 --4 --300 --1.0mA --200 --0.5mA --100 --20 --30 3 4 5 ITR04323 2SC4488 2.0mA 1.5mA 300 1.0mA 200 0.5mA 100 IB=0mA 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR04324 ITR04325 IC -- VBE 1.2 2SA1708 VCE= --5V 2SC4488 VCE=5V --0.8 --0.4 25°C --25°C --0.6 --0.2 0.8 Ta=75 °C 25°C --25°C Collector Current, IC -- A 1.0 Ta=75 °C Collector Current, IC -- A 2 IC -- VCE 0 --1.0 0.6 0.4 0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 0 --1.2 0.8 1.0 5 Ta=75°C 25°C --25°C 100 7 5 3 2 100 25°C Ta=75°C --25°C 7 5 3 3 2 2 10 1.2 ITR04327 2SC4488 VCE=5V 7 DC Current Gain, hFE 2 0.6 hFE -- IC 1000 5 3 0.4 Base-to-Emitter Voltage, VBE -- V 2SA1708 VCE= --5V 7 0.2 ITR04326 hFE -- IC 1000 DC Current Gain, hFE IB=0mA 1 400 --50 IC -- VBE --1.2 1mA 0 --40 Collector-to-Emitter Voltage, VCE -- V 2mA 0.4 Collector-to-Emitter Voltage, VCE -- V IB=0mA --10 3mA 500 --1.5mA 0 0 5mA ITR04322 A --2.0m --400 0.6 2.5 mA A 10mA 0 2SA1708 m --2.5 20mA 15mA 0 IC -- VCE --500 25m 0.8 --5 Collector-to-Emitter Voltage, VCE -- V A A 30m 0.2 IB=0mA 0 0 Collector Current, IC -- mA Collector Current, IC -- A A --0.6 2SC4488 5 --1 0 --2 --0.8 IC -- VCE 1.0 Collector Current, IC -- mA Collector Current, IC -- A --1.0 10 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 ITR04328 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR04329 No.3094-3/8 2SA1708 / 2SC4488 f T -- IC 2 100 7 5 3 2 7 --0.01 2 3 5 7 2 --0.1 3 Collector Current, IC -- A 100 7 5 3 2 7 7 --1.0 ITR04330 Output Capacitance, Cob -- pF 2 10 7 5 3 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- 3 5 7 1.0 ITR04331 Cob -- VCB 2SC4488 f=1MHz 5 3 2 10 7 5 7 7 --100 2 V ITR04332 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 --100 25 °C 5°C Ta=7 C --25° 3 3 5 7 10 2 3 5 7 100 2 ITR04333 VCE(sat) -- IC 1000 3 7 2 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 2SA1708 IC / IB=10 5 2SC4488 IC / IB=10 7 5 3 2 100 7 5 3 2 25°C Ta=75°C --25°C 2 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 0.01 7 --1.0 2 ITR04334 3 5 2SA1708 IC / IB=10 7 0.1 2 3 5 2SC4488 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 Ta= --25°C 7 25°C 3 7 1.0 2 ITR04335 VBE(sat) -- IC 10 7 75°C 2 Collector Current, IC -- A VBE(sat) -- IC --10 5 2 0.1 2 7 --1.0 --1.0 7 3 2 5 5 7 3 7 3 100 5 --1000 2 0.01 Collector Current, IC -- A 2SA1708 f=1MHz 7 Output Capacitance, Cob -- pF 5 Cob -- VCB 100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SC4488 VCE=10V 2 10 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V f T -- IC 3 2SA1708 VCE= --10V Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 3 5 3 2 1.0 25°C Ta= --25°C 7 5 75°C 3 7 --0.01 2 3 5 7 --0.1 2 3 Collector Current, IC -- A 5 7 --1.0 2 ITR04336 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 2 ITR04337 No.3094-4/8 2SA1708 / 2SC4488 2 Collector Current, IC -- A 1.0 ASO ICP=2.0A IC=1.0A 10 0m s 5 DC 3 2 op era tio n 0.1 5 3 2 0.01 5 5 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 7 1.0 2 3 5 7 10 PC -- Ta 1.2 2SA1708 / 2SC4488 10 1m ms s 2SA1708 / 2SC4488 Collector Dissipation, PC -- W 3 1.0 0.8 0.6 0.4 0.2 0 2 3 5 Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR04338 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR04339 No.3094-5/8 2SA1708 / 2SC4488 Bag Packing Specification 2SA1708S-AN, 2SA1708T-AN, 2SC4488S-AN, 2SC4488T-AN No.3094-6/8 2SA1708 / 2SC4488 Outline Drawing 2SA1708S-AN, 2SA1708T-AN, 2SC4488S-AN, 2SC4488T-AN Mass (g) Unit 0.275 mm * For reference No.3094-7/8 2SA1708 / 2SC4488 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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