Ordering number : EN2158B 2SD1835 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage • • Large current capacity Fast switching time Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings 60 V 50 V VEBO IC 6 V 2 A ICP PC Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg 3 A 0.75 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7522-002 • Package : NP • JEITA, JEDEC : SC-34A, TO-92, TO-226AA, SOT-54 • Minimum Packing Quantity : 1,500 pcs./box, 500pcs./bag 2 LOT No. 5.0 Electrical Connection 3 0.6 2.0 0.45 0.5 Marking RANK 2SD1835S 2SD1835T 2SD1835S-AA 2SD1835T-AA 4.0 D1835 5.0 4.0 14.0 1 0.45 0.44 1 1.3 2 3 1 : Emitter 2 : Collector 3 : Base 1.3 NP Semiconductor Components Industries, LLC, 2013 September, 2013 92612 TKIM/D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158-1/7 2SD1835 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max ICBO IEBO VCB=50V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=100mA hFE2 VCE=2V, IC=1.5A fT Cob VCE=10V, IC=50mA 150 VCB=10V, f=1MHz IC=1A, IB=50mA 12 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions 100* 100 nA 100 nA 560* 40 IC=1A, IB=50mA MHz pF 0.15 0.4 V 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 60 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 60 ns 550 ns 30 ns * : The 2SD1835 is classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT RB VR RL 50Ω + 470μF + 100μF VBE= --5V VCC IC=10IB1= --10IB2=500mA, VCC=25V Ordering Information Package Shipping 2SD1835S Device NP 500pcs./bag 2SD1835T NP 500pcs./bag 2SD1835S-AA NP 1,500pcs./box 2SD1835T-AA NP 1,500pcs./box IC -- VCE 2.4 Collector Current, IC -- A A 1.6 15mA 1.2 8mA 0.8 4mA 2mA 0.4 0.4 0.8 1.2 5mA 800 4mA 600 3mA 2mA 400 1mA 200 IB=0mA 0 7mA 6mA 1000 25mA 0 IC -- VCE A 40m 2.0 Pb Free 1200 Collector Current, IC -- mA 50m memo 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V 2.4 ITR09361 0 0 IB=0mA 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V 12 ITR09363 No.2158-2/7 2SD1835 IC -- VBE 2.4 VCE=2V 7 2.0 DC Current Gain, hFE 5 1.6 0.8 25°C --25°C 1.2 Ta=7 5°C Collector Current, IC -- A hFE -- IC 1000 VCE=2V 3 Ta=75°C 25°C 2 --25°C 100 7 5 0.4 3 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V f T -- IC 3 2 100 7 5 3 2 7 0.1 2 3 5 7 2 1.0 3 ITR09367 Cob -- VCB f=1MHz 5 3 2 10 7 2 10 3 5 7 2 100 3 5 7 1000 Collector Current, IC -- mA 2 5 1.0 3 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1000 7 5 3 2 25°C Ta=75°C 2 --25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 2 s 1m 10 s era 0m op ms 10 DC tio n 0.1 7 5 3 2 0.01 7 5 3 Ta=25°C Single pulse 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09376 5 7 100 ITR09371 IC / IB=20 3 2 1.0 25°C Ta= --25°C 7 75°C 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PC -- Ta 1000 IC = 3 2 3 Collector Current, IC -- A ASO 2A 2 10 VBE(sat) -- IC ITR09373 ICP=3A 1.0 7 5 7 5 3 3 Collector Dissipation, PC -- mW 3 2 1.0 Collector Current, IC -- A 5 5 7 2 3 3 Collector-to-Base Voltage, VCB -- V 10 3 100 7 5 2 ITR09369 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 7 10 Collector Current, IC -- A 3 100 5 10 2 Collector Current, IC -- A VCE=10V 7 7 0.01 ITR09365 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 1000 2 1.2 2 3 ITR09375 800 750 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09377 No.2158-3/7 2SD1835 Taping Specification 2SD1835S-AA, 2SD1835T-AA No.2158-4/7 2SD1835 No.2158-5/7 2SD1835 Bag Packing Specification 2SD1835S, 2SD1835T Outline Drawing 2SD1835S, 2SD1835T Mass (g) Unit 0.269 mm * For reference No.2158-6/7 2SD1835 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.2158-7/7