ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V(BR)CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power dissipation SOT23 package • High peak current • Low saturation voltage • 160V forward blocking voltage Applications • MOSFET and IGBT gate driving • Motor drive • Relay, lamp and solenoid drive Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXTN2020FTA Device marking 853 Issue 4 - January 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN2020F Absolute maximum ratings Parameter Symbol Limit Unit VCBO 160 V Collector-emitter voltage V(BR)CEV 160 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V ICM 12 A Continuous collector current(a) IC 4 A Base current IB 1 A Power dissipation @ TA=25oC(a) Linear derating factor PD 1.0 W mW/oC Power dissipation @ TA=25oC(b) Linear derating factor PD Power dissipation @ TA=25oC(c) Linear derating factor PD Collector-base voltage Peak pulse current 8 1.2 W mW/oC 9.6 Tj:Tstg Operating and storage temperature 1.56 12.5 W mW/oC -55 to +150 oC Thermal resistance Parameter Symbol Unit 125 C/W RθJA 104 o C/W RθJA 80 o C/W RθJA Junction to ambient (b) Junction to ambient (c) Junction to ambient Value o (a) NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs. Issue 4 - January 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN2020F Characteristics Issue 4 - January 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN2020F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 160 200 V IC=100µA Collector-emitter breakdown voltage V(BR)CEV 160 200 V IC =1µA, -1V< VBE<+0.3V Collector-emitter breakdown voltage V(BR)CEO 100 115 V IC=10mA (a) Emitter-base breakdown voltage V(BR)EBO 7 8 V IE=100µA Collector-emitter cut-off current ICEV <1 20 nA VCES=128V, VBE = -1V Collector-base cut-off current ICBO <1 20 nA VCB=128V Emitter-base cut-off current IEBO <1 10 nA VEB=6V Static forward current transfer ratio HFE 100 220 100 200 35 60 IC=4A, VCE=2V(a) 13 IC=10A, VCE=2V(a) IC=10mA, VCE=2V(a) IC=1A, VCE=2V(a) 300 20 30 mV IC=0.1A, IB=5mA(a) 40 50 mV IC=1A, IB=100mA(a) 85 105 mV IC=2A, IB=100mA(a) 120 150 mV IC=4A, IB=400mA(a) VBE(sat) 0.94 1.05 V IC=4A, IB=400mA(a) Base-emitter turn-on voltage VBE(on) 0.84 0.94 V IC=4A, VCE=2V(a) Transition frequency fT 130 MHz Output capacitance Cobo 22 pF VCB=10V, f=1MHz Turn–on time t(on) 37 ns VCC=10V, IC=1A, Turn-off time t(off) 910 ns IB1=IB2=100mA Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) Ic=100mA, VCE=10V, f=50MHz NOTES: (a) Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%. Issue 4 - January 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN2020F Typical characteristics Issue 4 - January 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN2020F Packaging details - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 - January 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com