A Product Line of Diodes Incorporated PAM2304 3MHz, 1A STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2304 is a step-down current-mode, DC-DC converter. At heavy load, the constant frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2304 provides a power-saving PulseSkipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2304 supports a range of input voltages from 2.5V to 5.5V, allowing the use of a single Li+/Li-polymer cell, multiple Alkaline/NiMH cell, USB and other standard power sources. The output voltage is adjustable from 0.6V to the input voltage. All versions employ internal power switch and synchronous rectifier to minimize external part count and realize high efficiency. During shutdown, the input is disconnected from the output and the shutdown current is less than 1µA. Other key features include under-voltage lockout to prevent deep battery discharge. The PAM2304 is available in TSOT25 and U-DFN2020-6 packages. Features Applications • Efficiency up to 95% • Smart Phone • Only 40µA (typ) Quiescent Current • MID • Output Current: Up to 1A • Portable Electronics • Internal Synchronous Rectifier • Wireless Devices • 3MHz Switching Frequency • Cordless Phone • Soft Start • Computer Peripherals • Under-Voltage Lockout • Battery Powered Widgets • Short Circuit Protection • Electronic Scales • Thermal Shutdown • Digital Frame • Small TSOT25 and U-DFN2020-6 Packages • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit R1 ⎞ ⎛ ⎟ V O = 0 .6 × ⎜ 1 + ⎝ R2 ⎠ PAM2304 Document number: DS36386 Rev. 2 - 2 1 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Pin Descriptions Pin Name TSOT25 U-DFN2020-6 Function EN 1 4 GND 2 6 Enable Control Input. Force this pin voltage above 1.5V, enables the chip, and below 0.3V shuts down the device. Ground. SW 3 1 The drains of the internalmain and synchronous power MOSFET. VIN 4 5 Chip main power supply pin. FB AGND PGND 5 — — 3 — — Feedback voltage to internal error amplifier, the threshold voltage is 0.6V. Analog Ground. Main power ground return pin. NC — 2 Not connected. Functional Block Diagram Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground. Parameter Input Voltage EN, FB Pin Voltage SW Pin Voltage Junction Temperature Storage Temperature Range Soldering Temperature PAM2304 Document number: DS36386 Rev. 2 - 2 Rating -0.3 to +6.0 -0.3 to VIN -0.3 to (VIN +0.3) 150 Unit V V V °C -65 to +150 300, 5 sec °C °C 2 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit Supply Voltage 2.7 to 5.5 V Operation Temperature Range -40 to +85 Junction Temperature Range -40 to +125 °C Thermal Information Parameter Symbol Thermal Resistance (Junction to Case) θJC Thermal Resistance (Junction to Ambient) Max TSOT25 (Note 4) 130 θJA Internal Power Dissipation (TA = +25°C) Note: Package PD U-DFN2020-6 25 TSOT25 250 U-DFN2020-6 68 TSOT25 400 U-DFN2020-6 980 Unit °C/W mW 4. The maximun output current for TSOT25 package is limited by internal power dissipation capacity as described in Application Information hereinafter. Electrical Characteristics (@TA = +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, COUT = 10µF, L = 1µH, unless otherwise specified.) Parameter Symbol Test Conditions Min Input Voltage Range VIN 2.5 Regulated Feedback Voltage VFB 0.588 Reference Voltage Line Regulation Regulated Output Voltage Accuracy Peak Inductor Current 0.6 Max -3 IO = 100mA Units 5.5 V 0.612 V 0.3 ∆VFB VO Typ %/V +3 % VIN = 3V, VFB = 0.5V or VO = 90% 1.5 Output Voltage Line Regulation LNR VIN = 2.5V to 5V, IO = 10mA 0.2 0.5 %/V Output Voltage Load Regulation LDR IO = 1mA to 800mA 0.5 1.5 % 40 70 µA IPK Quiescent Current IQ No load Shutdown Current ISD VEN = 0V Oscillator Frequency Drain-Source On-State Resistance SW Leakage Current High Efficiency fOSC MHz VFB = 0V or VO = 0V 1 MHz ILSW ±0.01 1 µA η 95 VEL Document number: DS36386 Rev. 2 - 2 3 Ω Ω EN Threshold Low PAM2304 µA VO = 100% 0.45 0.50 VEH Over Temperature Protection OTP Hysteresis 1 0.30 0.35 RDS(ON) EN Threshold High EN Leakage Current A IDS = 100mA P MOSFET N MOSFET % 1.5 V 0.3 V IEN ±0.01 µA OTP OTH 150 30 °C °C 3 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Typical Performance Characteristics (@TA = +25°C, CIN = 10µF, COUT = 10µF, L = 1µH, unless otherwise specified.) PAM2304 Document number: DS36386 Rev. 2 - 2 4 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Typical Performance Characteristics (cont.) (@TA = +25°C, CIN = 10µF, COUT = 10µF, L = 1µH, unless otherwise specified.) PAM2304 Document number: DS36386 Rev. 2 - 2 5 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Typical Performance Characteristics (cont.) (@TA = +25°C, CIN = 10µF, COUT = 10µF, L = 1µH, unless otherwise specified.) PAM2304 Document number: DS36386 Rev. 2 - 2 6 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Application Information The basic PAM2304 application circuit is shown on Page 2. External component selection is determined by the load requirement, selecting L first and then CIN and COUT. Inductor Selection For most applications, the value of the inductor will fall in the range of 1μH. Its value is chosen based on the desired ripple current. Large value inductors lower ripple current and small value inductors result in higher ripple currents. Higher VIN or VOUT also increases the ripple current as shown in Equation 1. A reasonable starting point for setting ripple current is ∆IL = 400mA (40% of 1A). ΔIL = ⎛ ⎞ ⎜1 − V OUT ⎟ ⎟ VIN ⎠ 1 Equation (1) (f )(L ) VOUT ⎜⎝ The DC current rating of the inductor should be at least equal to the maximum load current plus half the ripple current to prevent core saturation. Thus, a 1.4A rated inductor should be enough for most applications (1A + 400mA). For better efficiency, choose a low DC-resistance inductor. CIN and COUT Selection In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: CIN required IRMS ≅ IOMAX [VOUT (VIN − VOUT )]1/ 2 VIN This formula has a maximum at V = 2VOUT, where IRMS =IOUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that the capacitor manufacturer's ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor, or choose a capacitor rated at a higher temperature than required. Consult the manufacturer if there is any question. The selection of COUT is driven by the required effective series resistance (ESR). Typically, once the ESR requirement for COUT has been met, the RMS current rating generally far exceeds the IRIPPLE(P-P) requirement. The output ripple ∆VOUT is determined by: ⎛ 1 ⎞ ⎟ ΔV OUT ≅ ΔIL ⎜⎜ ESR + 8fCOUT ⎟⎠ ⎝ Where f = operating frequency, COUT = output capacitance and ∆IL = ripple current in the inductor. For a fixed output voltage, the output ripple is highest at maximum input voltage since ∆IL increases with input voltage. Using Ceramic Input and Output Capacitors Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. Using ceramic capacitors can achieve very low output ripple and small circuit size. When choosing the input and output ceramic capacitors, choose the X5R or X7R dielectric formulations. These dielectrics have the best temperature and voltage characteristics of all the ceramics for a given value and size. Thermal Consideration Thermal protection limits power dissipation in the PAM2304. When the junction temperature exceeds +150°C, the OTP (Over Temperature Protection) starts the thermal shutdown and turns the pass transistor off. The pass transistor resumes operation after the junction temperature drops below +120°C. For continuous operation, the junction temperature should be maintained below +125°C. The power dissipation is defined as: PD = IO 2 VO DS( ON)H + (VIN − VO )RDS(ON)L VIN + (tSW FS IO + IQ ) VIN IQ is the step-down converter quiescent current. The term tsw is used to estimate the full load step-down converter switching losses. PAM2304 Document number: DS36386 Rev. 2 - 2 7 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Application Information (cont.) Thermal Consideration (cont.) For the condition where the step-down converter is in dropout at 100% duty cycle, the total device dissipation reduces to: PD = IO 2 RDS(ON)H + IQ VIN Since RDS(ON), quiescent current and switching losses all vary with input voltage, the total losses should be investigated over the complete input voltage range. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surrounding airflow and temperature difference between junction and ambient. The maximum power dissipation can be calculated by the following formula: PD = T J(MAX ) − T A θJA Where TJ(max) is the maximum allowable junction temperature +125°C. TA is the ambient temperature and θJA is the thermal resistance from the junction to the ambient. Based on the standard JEDEC for a two layers thermal test board, the thermal resistance of TSOT25 package is 250°C/W. The maximum power dissipation at TA = +25°C can be calculated by following formula: PD = (125°C-25°C)/250°C/W = 0.4W Setting the Output Voltage The internal reference is 0.6V (Typical). The output voltage is calculated as below: R1 ⎞ ⎛ ⎟ V O = 0 .6 × ⎜ 1 + R2 ⎠ ⎝ The output voltage is given by Table 1. Table 1: Resistor selection for output voltage setting VO R1 R2 1.2V 1.5V 1.8V 2.5V 3.3V 100k 150k 200k 380k 540k 100k 100k 100k 120k 120k 100% Duty Cycle Operation As the input voltage approaches the output voltage, the converter turns the P-Channel transistor continuously on. In this mode the output voltage is equal to the input voltage minus the voltage drop across the P-Channel transistor: VOUT = VIN – ILOAD (RDS(ON) + RL ) where RDS(ON) = P-Channel Switch ON Resistance, ILOAD = Output Current, R = Inductor DC Resistance UVLO and Soft-Start The reference and the circuit remain reset until the VIN crosses its UVLO threshold. The PAM2304 has an internal soft-start circuit that limits the in-rush current during start-up. This prevents possible voltage drops of the input voltage and eliminates the output voltage overshoot. The soft-start acts as a digital circuit to increase the switch current in several steps to the P-Channel current limit (1500mA). Short Circuit Protection The switch peak current is limited cycle-by-cycle to a typical value of 1500mA. In the event of an output voltage short circuit, the device operates with a frequency of 1MHz and minimum duty cycle, therefore the average input current is typically 200mA. Thermal Shoutdown When the die temperature exceeds +150°C, a reset occurs and the reset remains until the temperature decrease to +120°C, at which time the circuit can be restarted. PAM2304 Document number: DS36386 Rev. 2 - 2 8 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Application Information (cont.) PCB Layout Check List When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the PAM2304. These items are also illustrated graphically in Figure 1. Check the following in your layout: 1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct and wide. 2. Does the VFB pin connect directly to the feedback resistors? The resistive divider R1/R2 must be connected between the (+) plate of COUT and ground. 3. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC current to the internal power MOSFETs. 4. Keep the switching node, SW, away from the sensitive VFB node. 5. Keep the (–) plates of CIN and COUT as close as possible. Ordering Information Part Number PAM2304AABADJ PAM2304BKFADJ Output Voltage ADJ ADJ Package TSOT25 U-DFN2020-6 (Type C) Packaging 3000 Units/Tape & Reel 3000 Units/Tape & Reel Marking Information PAM2304 Document number: DS36386 Rev. 2 - 2 9 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT25 D e1 E E1 L2 c 4x θ1 e θ L 5x b A A2 A1 TSOT25 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm U-DFN2020-6 A A3 A1 Seating Plane D D2 Pin #1 ID E E2 Z (4x) L e PAM2304 Document number: DS36386 Rev. 2 - 2 U-DFN2020-6 Type C Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.02 A3 –– –– 0.15 b 0.25 0.35 0.30 D 1.95 2.075 2.00 D2 1.55 1.75 1.65 E 1.95 2.075 2.00 E2 0.86 1.06 0.96 e –– –– 0.65 L 0.25 0.35 0.30 Z –– –– 0.20 All Dimensions in mm b 10 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TSOT25 C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (5x) X (5x) U-DFN2020-6 X2 X1 Dimensions Y (6x) Y2 Y1 X (6x) PAM2304 Document number: DS36386 Rev. 2 - 2 C X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.350 1.650 1.700 0.525 1.010 2.400 C 11 of 12 www.diodes.com June 2014 © Diodes Incorporated A Product Line of Diodes Incorporated PAM2304 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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