BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -45V, -60V & -80V IC = -1A Continuous Collector Current ICM = -2A Peak Pulse Current Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A Complementary NPN Types: BCX5616Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Finish Leads. Solderable per MIL-STD-202 Method 208 e3 Weight: 0.055 grams (Approximate) Applications Automotive Medium Power Switching or Amplification Applications AF Driver and Output Stages SOT89 C E C C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BCX5316QTA Automotive AL 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT89 AL BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 AL = Product Type Marking Code 1 of 7 www.diodes.com May 2015 © Diodes Incorporated BCX5316Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -100 V Collector-Emitter Voltage VCEO -80 V VEBO -5 V Continuous Collector Current IC -1 Peak Pulse Collector Current ICM -2 Continuous Base Current IB -100 Peak Pulse Base Current IBM -200 Emitter-Base Voltage A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 8) (Note 6) (Note 7) (Note 8) Value PD RθJA (Note 9) Unit 1 1.5 2.0 125 83 60 W °C/W RθJL 13 °C/W TJ, TSTG -65 to +150 °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper. 9. Thermal resistance from junction to solder-point (on the exposed collector pad). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated BCX5316Q 1.0 Thermal Resistance (°C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 Temperature (°C) 120 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 100 Single Pulse. T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) 140.0 3 T amb=25°C 120.0 100.0 80.0 1oz copper 60.0 40.0 Maximum Power (W) Thermal Resistance (°C/W) Pulse Power Dissipation 2oz copper 0 500 1000 1500 2000 2500 Copper Area (sqmm) BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 2oz copper 2 1oz copper 1 0 T amb=25°C 0 500 1000 1500 2000 2500 Copper Area (sqmm) 3 of 7 www.diodes.com May 2015 © Diodes Incorporated BCX5316Q Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO -100 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -80 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -10µA Collector Cut-Off Current ICBO — — -0.1 -20 μA VCB = -30V VCB = -30V, TJ = +150°C Emitter Cut-Off Current IEBO — — -20 nA VEB = -5V — — hFE 25 100 25 — — 250 — IC = -5mA, VCE = -2V IC = -150mA, VCE = -2V IC = -500mA, VCE = -2V Static Forward Current Transfer Ratio (Note 11) — Test Condition Collector-Emitter Saturation Voltage (Note 11) VCE(sat) — — -0.5 V IC = -500mA, IB = -50mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) — — -1.0 V IC = -500mA, VCE = -2V Transition Frequency fT 150 — — MHz IC = -50mA, VCE = -10V f = 100MHz Output Capacitance Cobo — — 25 pF VCB = -10V, f = 1MHz 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Note: 500 1.0 VCE = -5V IB = 8mA 0.8 400 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IB = 10mA IB = 6mA 0.6 IB = 4mA 0.4 IB = 2mA T A = 150°C 300 T A = 85°C 200 100 0.2 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 4 of 7 www.diodes.com T A = 25°C T A = -55°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current May 2015 © Diodes Incorporated 0.5 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 T A = 150°C 0.2 0.4 0.3 TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 VCE = -2V 0 0.001 TA = -55°C 0.01 0.1 1 -IC, COLLECTOR CURRENT(A) Fig 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.001 10 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 300 fT, GAIN-BANDWIDTH PRODUCT (MHz) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) BCX5316Q 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C 0.2 IC / IB = 10 250 200 150 100 VCE = -5V f = 100MHz 50 0 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 20 40 60 80 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current 160 140 f = 1MHz CAPACITANCE(pF) 120 100 80 Cibo 60 40 20 Cobo 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 5 of 7 www.diodes.com May 2015 © Diodes Incorporated BCX5316Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D1 0 .20 c R0 SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.427 REF Z 0.30 REF All Dimensions in mm H E B1 L B e D2 8° (4X ) H1 E2 A L1 D z Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Dimensions Y3 Y1 Y4 X Y C G X X1 X2 Y Y1 Y2 Y3 Y4 G Y2 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C BCX5316Q Datasheet Number: DS37033 Rev. 2 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated BCX5316Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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