NEW PROD UC T DMP2160UW Features Mechanical Data

DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data


Low On-Resistance
100m @ VGS = -4.5V


120m @ VGS = -2.5V

160m @ VGS = -1.8V

Moisture Sensitivity: Level 1 per J-STD-020D

Very Low Gate Threshold Voltage VGS(th) ≤ 1V

Terminals Connections: See Diagram Below

Low Input Capacitance


Fast Switching Speed
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3

Weight: 0.006 grams (approximate)

Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Drain
D
SOT323
Gate
G
S
Source
TOP VIEW
Internal Schematic
TOP VIEW
Ordering Information (Note 4)
Part Number
DMP2160UW-7
Notes:
Compliance
Standard
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMF
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
DMP2160UW
Document number: DS31521 Rev. 5 - 2
2009
W
Feb
2
Mar
3
YM
NEW PRODUCT
Features
DMF = Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2010
X
Apr
4
2011
Y
May
5
Jun
6
1 of 5
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2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
February 2013
© Diodes Incorporated
DMP2160UW
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Symbol
Value
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
ID
-1.5
-1.2
A
IDM
-10
A
Symbol
Value
Units
PD
350
mW
RθJA
360
°C/W
TJ, TSTG
-55 to +150
°C
TA = +25°C
TA = +70°C
Drain Current (Note 5)
Pulsed Drain Current
Units
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
-20
—
—
V
Test Condition
VGS = 0V, ID = -250µA
IDSS
—
—
-1.0
µA
VDS = -20V, VGS = 0V
IGSS
—
—
—
—
±100
±800
nA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
-0.4
-0.6
-0.9
V
VDS = VGS, ID = -250µA
RDS(ON)
—
75
90
120
100
120
160
mΩ
VGS = -2.5V, ID = -1.2A
Forward Transconductance
gFS
—
4
—
S
VDS = -10V, ID = -1.5A
Diode Forward Voltage (Note 6)
VSD
—
—
-1.0
V
VGS = 0V, IS = -1.0A
Input Capacitance
Ciss
—
627
—
pF
Output Capacitance
Coss
—
64
—
pF
Crss
—
53
—
pF
Zero Gate Voltage Drain Current
TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS = -4.5V, ID = -1.5A
VGS = -1.8V, ID = -1A
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
Notes:
VDS = -10V, VGS = 0V
f = 1.0MHz
2
5. Device mounted on 1in FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
6. Short duration pulse test used to minimize self-heating effect.
DMP2160UW
Document number: DS31521 Rev. 5 - 2
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February 2013
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DMP2160UW
10
10
VDS = -5V
VGS = 3.0V
VGS = 3.0V
-ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8
VGS = 3.0V
VGS = 2.5V
6
VGS = 2.0V
4
VGS = 1.5V
2
6
4
TA = 150°C
2
TA = 125°C
TA = 85°C
TA = 25°C
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
5
TA = -55°C
0
0.5
1
1.5
2
2.5
-VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
1,200
1.6
VGS = 0V
1,000
1.4
VGS = -2.5V
ID = -2A
1.2
C, CAPACITANCE (pF)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
f = 1MHz
VGS = -4.5V
ID = -4.5A
1.0
0.8
800
600
Ciss
400
200
0.6
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance Variation with Temperature
Coss
Crss
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
20
10
1
0.9
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
8
0.8
0.7
ID = 1mA
0.6
0.5
ID = 250µA
0.4
8
6
4
T A = 25°C
2
0.3
0.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMP2160UW
Document number: DS31521 Rev. 5 - 2
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0
0
0.2 0.4 0.6 0.8
1
1.2
1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 6 Diode Forward Voltage vs. Current
1.6
February 2013
© Diodes Incorporated
DMP2160UW
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
RJA(t) = r(t) * RJA
RJA = 338°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - T A = P * RJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 7 Transient Thermal Response
Package Outline Dimensions
H
K
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.650 BSC
F
0.375 0.475 0.425
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.00
0.10
0.05
K
0.90
1.00
0.95
L
0.25
0.40
0.30
M
0.10
0.18
0.11
a
8°C
All Dimensions in mm
a
M
L
D
J
A
B
C
G
Suggested Pad Layout
Y
Z
C
X
DMP2160UW
Document number: DS31521 Rev. 5 - 2
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
E
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DMP2160UW
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2013, Diodes Incorporated
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DMP2160UW
Document number: DS31521 Rev. 5 - 2
5 of 5
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February 2013
© Diodes Incorporated