DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) SO-8 S D S D S D G D Top View Internal Schematic Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 3) ID IDM Value 30 ±20 16 13 64 Units V V A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C Device mounted on 2 oz. Copper pads on FR-4 PCB, with RθJA = 50°C No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3007LSS Document number: DS31460 Rev. 5 - 2 1 of 5 www.diodes.com April 2010 © Diodes Incorporated DMN3007LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.3 RDS (ON) ⎯ 2.1 7 10 V Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS gfs VSD ⎯ ⎯ ⎯ 5 7.9 16.4 0.67 ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 15A VGS = 4.5V, ID = 13A VDS = 10V, ID = 15A VGS = 0V, IS = 2.3A Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 2714 436 380 0.7 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg ⎯ ⎯ Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 31.2 64.2 7.1 17.1 10.3 14.8 85.1 43.6 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ mΩ Test Condition VDS = 15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, VGS = 4.5V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A ns VDS = 15V, VGS = 10V, ID = 1A, RG = 6.0Ω 5. Short duration pulse test used to minimize self-heating effect. 30 28 30 VGS = 10V 26 24 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 20 VGS = 3.0V 15 10 VGS = 2.8V VGS = 2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN3007LSS Document number: DS31460 Rev. 5 - 2 20 18 16 14 12 10 8 TA = 150°C TA = 125°C 6 4 2 0 5 0 22 5 2 of 5 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 April 2010 © Diodes Incorporated 12 11 10 9 8 VGS = 4.5V 7 6 5 VGS = 10V 4 3 2 1 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) DMN3007LSS VGS = 4.5V 12 T A = 150°C TA = 125°C 10 TA = 85°C T A = 25°C 8 TA = -55°C 6 4 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 14 VGS = 10V ID = 10A 1.4 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 2.0 ID = 1mA 1.6 ID = 250µA 1.2 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 10,000 30 27 TA = 25°C C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) 24 21 18 15 12 9 Ciss 1,000 Coss Crss 6 3 0 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current DMN3007LSS Document number: DS31460 Rev. 5 - 2 3 of 5 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 30 April 2010 © Diodes Incorporated DMN3007LSS r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 88°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.0001 t1 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response Ordering Information (Note 6) Part Number DMN3007LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N3007LS Part no. YY WW 1 4 Xth week: 01 ~ 53 Year: “07” = 2007 “08” = 2008 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° A2 A A3 Detail ‘A’ b e D DMN3007LSS Document number: DS31460 Rev. 5 - 2 4 of 5 www.diodes.com SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm April 2010 © Diodes Incorporated DMN3007LSS Suggested Pad Layout X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMN3007LSS Document number: DS31460 Rev. 5 - 2 5 of 5 www.diodes.com April 2010 © Diodes Incorporated