NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate TOP VIEW TOP VIEW Maximum Ratings S G Source Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Value 30 ±20 5.2 4.2 20 2.0 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V 1 3 35 50 gfs VSD 1.5 27 40 6.5 0.7 V ⎯ ⎯ ⎯ ⎯ ⎯ 1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.2A VGS = 4.5V, ID = 4.2A VDS = 5V, ID = 5.2A VGS = 0V, IS = 1.0A Ciss Coss Crss ⎯ ⎯ ⎯ 390 55 45 ⎯ ⎯ ⎯ pF pF pF VGS(th) RDS (ON) mΩ Test Condition VDS = 15V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3050S Document number: DS31503 Rev. 4 - 3 1 of 5 www.diodes.com June 2009 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L 20 20 VDS = 5V 18 VGS = 10V VGS = 4.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 12 VGS = 2.0V 8 VGS = 1.5V 4 14 12 10 8 6 TA = 150°C 4 VGS = 3.0V TA = 125°C 2 VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.05 0.04 VGS = 4.5V 0.03 VGS = 10V 0.02 0.01 0 2 1.5 2 2.5 3 3.5 4 VGS, GATE SOURCE VOLTAGE (V) 4.5 Fig. 2 Typical Transfer Characteristics 0.06 0 TA = -55°C 1 5 TA = 85°C T A = 25°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3050S 0.07 0.06 TA = 150°C TA = 125°C 0.05 TA = 85°C 0.04 T A = 25°C 0.03 TA = -55°C 0.02 0 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1,000 1.8 f = 1MHz 1.6 Ciss C, CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 0V VGS = 4.5V ID = 5A 1.4 VGS = 10V ID = 10A 1.2 1.0 100 Coss Crss 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3050S Document number: DS31503 Rev. 4 - 3 2 of 5 www.diodes.com 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30 June 2009 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L 20 18 1.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 DMN3050S 1.6 ID = 1mA 1.4 ID = 250µA 1.2 14 12 10 8 TA = 150°C 6 T A = 125°C 4 1.0 TA = 85°C TA = 25°C 2 TA = -55°C 0 0.8 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 176°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 9 Transient Thermal Response Ordering Information (Note 5) Part Number DMN3050S-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2008 V Jan 1 DMN3050S Document number: DS31503 Rev. 4 - 3 2009 W Feb 2 Mar 3 3N2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM 3N2 2010 X Apr 4 2011 Y May 5 Jun 6 3 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D June 2009 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DMN3050S Document number: DS31503 Rev. 4 - 3 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com June 2009 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMN3050S Document number: DS31503 Rev. 4 - 3 5 of 5 www.diodes.com June 2009 © Diodes Incorporated