DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) SOT-26 TOP VIEW Maximum Ratings D D S D D G TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Symbol VDSS VGSS ID IDM Value 30 ±20 4.0 16 Units V V A A Symbol PD RθJA TJ, TSTG Value 900 139 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3051LDM Document number: DS31523 Rev. 3 - 2 1 of 5 www.diodes.com November 2009 © Diodes Incorporated DMN3051LDM Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 ±80 ±800 V nA 1.2 ⎯ 28 50 2.2 V 38 64 mΩ IGSS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) RDS (ON) ⎯ Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS |Yfs| VSD ⎯ ⎯ 5.2 0.78 ⎯ 1.16 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 424 115 81 1.3 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Total Gate Charge Qg ⎯ 4.3 8.6 ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ 1.2 2.5 ⎯ ⎯ Notes: VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±20V, VDS = 0V nA Static Drain-Source On-Resistance Test Condition VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2A VDS = 5V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = 10V, VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A nC 4. Short duration pulse test used to minimize self-heating effect. 9.0 6 8.0 VGS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5 7.0 6.0 5.0 4.0 3.0 VDS = 5V 4 3 2 2.0 VGS = 2.5V 1.0 1 VGS = 3.0V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN3051LDM Document number: DS31523 Rev. 3 - 2 TA = 85°C TA = 25°C TA = -55°C VGS = 1.8V 0 TA = 150°C TA = 125°C 3 0 1.5 2.5 VGS, GATE SOURCE VOLTAGE (V) 3.5 Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com November 2009 © Diodes Incorporated 0.1 0.09 0.08 0.07 0.06 VGS = 4.5V 0.05 0.04 0.03 VGS = 10V 0.02 0.01 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3051LDM 0.09 TA = 150°C 0.08 T A = 125°C 0.07 TA = 85°C 0.06 T A = 25°C 0.05 TA = -55°C 0.04 0.03 6 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 6 1.6 1.4 VGS = 10V ID = 5.8A 1.3 1.2 VGS = 4.5V ID = 5A 1.1 Ciss C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 1.0 0.9 Coss Crss 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0 1 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ID = 250µA 2 1.5 1 0.5 0 -50 T A = 150°C 0.1 Document number: DS31523 Rev. 3 - 2 TA = 125°C TA = 85°C 0.01 T A = 25°C T A = -55°C 0.001 0.0001 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN3051LDM 30 10 3 2.5 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 3 of 5 www.diodes.com 0.1 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.1 November 2009 © Diodes Incorporated DMN3051LDM Ordering Information (Note 5) Part Number DMN3051LDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 3N5 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM 3N5 2010 X Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C E Y 2.40 0.95 X DMN3051LDM Document number: DS31523 Rev. 3 - 2 4 of 5 www.diodes.com November 2009 © Diodes Incorporated DMN3051LDM IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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