ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS Description This new generation Trench MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance. Mechanical Data • Case: SOT23 • Applications Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Power management functions • Portable Equipment • Battery Charging • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) SOT23 D D G S G S Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number ZXMP3F30FHTA Notes: Compliance Standard Case SOT23 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMB KPA Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 Mar 3 KPA = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM NEW PRODUCT -30V Features and Benefits 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 7 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D February 2014 © Diodes Incorporated ZXMP3F30FH Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C (Note 6) TA = +70°C (Note 6) TA = +25°C (Note 5) TL = +25°C (Note 8) NEW PRODUCT Drain Current, VGS = -10V Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) Thermal Characteristics ID IDM IS ISM Symbol TA = +25°C (Note 5) Total Power Dissipation (Note 5) Linear Derating Factor TA = +25°C (Note 6) PD TL = +25°C (Note 8) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Document number: DS33579 Rev. 2 - 2 Units V V Value 0.95 7.6 1.4 11.2 1.96 15.7 131 89 -55 to +150 Units W mW/°C W mW/°C W mW/°C A A A A (@TA = +25°C, unless otherwise specified.) Characteristic ZXMP3F30FH Value -30 ±20 -3.4 -2.7 -2.8 -4.0 -15.3 -2 -15.3 (Note 5) (Note 6) RθJA TJ, TSTG 2 of 7 www.diodes.com °C/W °C February 2014 © Diodes Incorporated ZXMP3F30FH NEW PRODUCT Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 9) Symbol Min Typ Max Unit BVDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V nA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1 ⎯ -3 V ⎯ ⎯ 80 140 mΩ ⎯ ⎯ 5 -0.8 ⎯ -1.2 S V VDS = VGS, ID = -250μA VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -1.9A VDS = -15V, ID = -3A VGS = 0V, IS = -1.7A ⎯ ⎯ ⎯ 370 72 38 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V, f = 1.0MHz ⎯ ⎯ ⎯ 7 1.2 1.3 ⎯ ⎯ ⎯ nC VDS = -15V, VGS = -10V, ID = -3A ⎯ ⎯ ⎯ ⎯ 1.3 2.6 49 22 ⎯ ⎯ ⎯ ⎯ ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω ⎯ ⎯ 14.6 9.5 ⎯ ⎯ ns nC IS= -1.5A,di/dt=100A/μs IDSS RDS (ON) Forward Transconductance (Note 9 & 10) gfs Diode Forward Voltage (Note 9) VSD DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss GATE CHARACTERISTICS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd SWITCHING CHARACTERISTICS (Note 10 & 11) Turn-On Delay Time td(on) Rise Time tr Turn-On Delay Time td(off) Rise Time tf SOURCE-DRAIN DIODE CHARACTERISTICS (Note 11) Reverse Recovery Time trr Reverse Recovery Charge Qrr Notes: Test Condition 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. Mounted on FR4 PCB measured at t ≤10 sec. 7. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs – pulse width limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 3 of 7 www.diodes.com February 2014 © Diodes Incorporated ZXMP3F30FH NEW PRODUCT Typical Characteristics ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 4 of 7 www.diodes.com February 2014 © Diodes Incorporated ZXMP3F30FH NEW PRODUCT Test Circuits ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 5 of 7 www.diodes.com February 2014 © Diodes Incorporated ZXMP3F30FH Package Outline Dimensions ° 7 l l A Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. H a M A 1 L L B C NEW PRODUCT E N A L 5 P2 E. G0 U A G J K 1 K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° α All Dimensions in mm D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 6 of 7 www.diodes.com February 2014 © Diodes Incorporated ZXMP3F30FH IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com ZXMP3F30FH Document number: DS33579 Rev. 2 - 2 7 of 7 www.diodes.com February 2014 © Diodes Incorporated