DMN3033LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low Gate Charge Low RDS(ON): • 33 mΩ @VGS = 10V • 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SOT-26 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • SOT-26 TOP VIEW Maximum Ratings D S D D G Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics ID IDM IS Value 30 ±20 6.9 5.8 20 2.25 Unit V V Value 2 62.5 -55 to +150 Unit W °C /W °C A A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Notes: D Symbol PD RθJA TJ, TSTG 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3033LDM Document number: DS31345 Rev. 4 - 2 1 of 5 www.diodes.com July 2009 © Diodes Incorporated DMN3033LDM Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resisitance SWITCHING CHARACTERISTICS Symbol TJ = 25°C TJ = 55°C Notes: Typ Max Unit BVDSS 30 ⎯ IDSS ⎯ ⎯ IGSS VGS(th) ⎯ 1.0 RDS (ON) ⎯ gFS VSD ⎯ ⎯ ⎯ ⎯ 25 36 5 0.7 ⎯ 1 5 ±100 2.1 33 40 ⎯ 1.1 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 755 136 108 0.89 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg ⎯ ⎯ nC Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 6.4 13.0 1.9 3.2 11 7 63 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Min Test Condition V ID = 250μA, VGS = 0V μA VDS = 30V, VGS = 0V nA V VDS = 0V, VGS = ±20V VDS = VGS, ID = 250μA VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A VDS = 10V, ID = 8A IS = 2.25A, VGS = 0V mΩ S V VDS = 10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 5A VGS = 10V, VDS = 15V, ID = 6.9A VGS = 10V, VDS = 15V, ID = 6.9A VGS = 10V, VDS = 15V, ID = 6.9A VDD = 15V, VGS = 10V, RD = 1.8Ω, RG = 6Ω 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 20 18 VDS = 5V Pulsed 16 14 12 10 8 6 4 2 0 0 DMN3033LDM Document number: DS31345 Rev. 4 - 2 2 of 5 www.diodes.com 1 2 3 4 July 2009 © Diodes Incorporated 1,200 0.06 f = 1 MHz VGS = 0V 1,000 0.05 0.04 CT, CAPACITANCE (pF) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3033LDM VGS = 4.5V 0.03 VGS = 10V 0.02 800 Ciss 600 400 200 Coss C rss 0 0.01 0 2 0 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Total Capacitance 30 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2 VGS = 10V ID = 6A 1.5 VGS = 4.5V ID = 5A 1 0.5 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMN3033LDM Document number: DS31345 Rev. 4 - 2 3 of 5 www.diodes.com -25 July 2009 © Diodes Incorporated DMN3033LDM Ordering Information (Note 7) Part Number DMN3033LDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NA5 Date Code Key Year Code Month Code 2007 U 2008 V Jan 1 Feb 2 2009 W Mar 3 NA5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2010 X Apr 4 May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M J L D SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMN3033LDM Document number: DS31345 Rev. 4 - 2 4 of 5 www.diodes.com July 2009 © Diodes Incorporated DMN3033LDM IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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