ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features Max RDS(ON) 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V 60V Max ID TA = +25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power management applications. Low On-Resistance Fast Switching Speed Low Threshold Low Gate Charge Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data DC-DC Converters Case: SOT23 Power Management Functions Case Material: Molded Plastic, “Green” Molding Compound, Relay And Solenoid Driving Motor Control UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (Approximate) SOT23 D S G D G Top View S Equivalent Circuit Top View Pin Out Ordering Information (Notes 4 & 5) Product ZXMN6A07FTA ZXMN6A07FQTA Notes: Compliance AEC-Q101 Automotive Marking 7N6 7N6 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-Free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 7N6 ZXMN6A07F Document Number DS33547 Rev. 9 - 2 7N6 = Product Type Marking Code 1 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V TA = +25°C TA = +70°C TA = +25°C (Note 7) (Note 7) (Note 6) Pulsed Drain Current (Note 8) Continuous Source Current (Body Diode) (Note 7) Pulsed Source Current (Body Diode) (Note 8) Symbol VDSS VGS Value 60 ±20 Units V V ID 1.4 1.1 1.2 A IDM IS ISM 6.9 1 6.9 A A A Symbol Value 625 5 806 6.4 200 155 194 -55 to +150 Unit mW mW/°C mW mW/°C Thermal Characteristics Characteristic Power Dissipation (Note 6) Linear Derating Factor Power Dissipation (Note 7) Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 9) Operating and Storage Temperature Range Notes: PD PD (Note 6) (Note 7) RθJA RθJL TJ, TSTG °C/W °C 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperate. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN6A07F Document Number DS33547 Rev. 9 - 2 2 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F Thermal Characteristics (continued) 10 ID Drain Current (A) Limited 1 DC 1s 100m 100ms 10ms 10m 1ms Single Pulse T amb=25°C 100µs 1 10 100 VDS Drain-Source Voltage (V) Max Power Dissipation (W) 0.7 RDS(on) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 Maximum Power (W) Thermal Resistance (°C/W) T amb=25°C D=0.5 100 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS33547 Rev. 9 - 2 100 120 140 160 Single Pulse T amb=25°C Pulse Width (s) ZXMN6A07F 80 Derating Curve 150 50 60 Temperature (°C) Safe Operating Area 200 40 Pulse Power Dissipation 3 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1 ±100 V µA nA ID = 250µA, VGS = 0V VDS = 60V, VGS = 0V VGS =±20V, VDS = 0V VGS(th) 1.0 V Static Drain-Source On-Resistance (Note 10) RDS(ON) Forward Transconductance (Notes 10 and 12) Diode Forward Voltage (Note 10) Reverse Recovery Time (Note 12) Reverse Recovery Charge (Note 12) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD trr Qrr 2.3 0.8 20.5 21.3 3.0 0.250 0.350 0.95 ID = 250µA, VDS = VGS VGS = 10V, ID = 1.8A VGS = 4.5V, ID = 1.3A VDS = 15V, ID = 1.8A TJ = +25°C, IS = 0.45A, VGS = 0V TJ = +25°C, IF = 1.8A, di/dt = 100A/µs Ciss Coss Crss tD(on) tr tD(off) tf 166 19.5 8.7 1.8 1.4 4.9 2.0 Total Gate Charge (Note 11) Qg 1.65 Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Qg Qgs Qgd 3.2 0.67 0.82 Notes: Ω S V ns nC Test Condition pF VDD = 40V, VGS = 0V f = 1.0MHz ns VDD = 30V, ID = 1.8A, RG 6.0Ω VGS = 10V nC VDS = 30V, VGS = 5V, ID = 1.8A nC VDS = 30V, VGS = 10V, ID = 1.8A 10. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 11. Switching characteristics are independent of operating junction temperature. 12. For design aid only, not subject to production testing. ZXMN6A07F Document Number DS33547 Rev. 9 - 2 4 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F Typical Characteristics 10V 6V T = 25°C 10 4V 3.5V ID Drain Current (A) ID Drain Current (A) 10 3V 1 2.5V 0.1 VGS 2V 0.01 0.1 1 10V 6V T = 150°C VGS 3.5V 3V 1 2.5V 2V 0.1 1.5V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 25°C 0.1 1.0 RDS(on) Drain-Source On-Resistance (W) T = 150°C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS = 10V 1.6 ID = 1.8A 1.4 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 10 10 2.5V 3V 3.5V 4V VGS T = 25°C 1 4.5V 5V 10V 0.1 0.1 1 ISD Reverse Drain Current (A) ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 1.8 VDS = 10V T = 150°C 1 T = 25°C 0.1 ID Drain Current (A) Document Number DS33547 Rev. 9 - 2 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) On-Resistance v Drain Current ZXMN6A07F 0.4 Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F 200 180 160 140 120 100 80 60 40 20 0 10 VGS = 0V f = 1MHz CISS COSS CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) C Capacitance (pF) Typical Characteristics (continued) ID = 1.8A 8 6 VDS = 30V 4 2 0 0 1 2 Q - Charge (nC) 3 Gate-Source Voltage v Gate Charge Test Circuits ZXMN6A07F Document Number DS33547 Rev. 9 - 2 6 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT23 All 7° H K1 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm GAUGE PLANE 0.25 a M A L C L1 B D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Y Z C X ZXMN6A07F Document Number DS33547 Rev. 9 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 7 of 8 www.diodes.com July 2015 © Diodes Incorporated ZXMN6A07F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com ZXMN6A07F Document Number DS33547 Rev. 9 - 2 8 of 8 www.diodes.com July 2015 © Diodes Incorporated