A Product Line of Diodes Incorporated DMC2020USD 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max Device V(BR)DSS RDS(on) max TA = 25°C (Notes 3 & 5) Q1 Q2 20mΩ @ VGS = 4.5V 8.5A 28mΩ @ VGS = 2.5V 7.2A 33mΩ @ VGS = -4.5V -6.8A 45mΩ @ VGS = -2.5V -5.8A 20V -20V Mechanical Data • • Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Reduced footprint with two discretes in a single SO8 Low gate drive Low input capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 1) Motor control DC-DC Converters Power management functions Notebook Computers and Printers • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) D1 D2 SO-8 ESD PROTECTED TO 2kV Top View S1 D1 G1 D1 G1 S2 D2 G2 D2 G2 S1 S2 Q1 N-Channel Top View Q2 P-Channel Equivalent Circuit Ordering Information (Note 1) Product DMC2020USD-13 Notes: Marking C2020UD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com. Marking Information C2020UD YY WW DMC2020USD Document number: DS32121 Rev. 3 - 2 = Manufacturer’s Marking C2020UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD Maximum Ratings @TA = 25°C unless otherwise specified Symbol N-Channel - Q1 P-Channel - Q2 Drain-Source Voltage Characteristic VDSS 20 -20 Gate-Source Voltage VGSS ±10 ±10 (Notes 3 & 5) 8.5 -6.8 TA = 70°C (Notes 3 & 5) 6.8 -5.4 6.5 7.8 -5.2 -6.3 33.6 -26.8 Continuous Drain Current VGS = 4.5V Pulsed Drain Current VGS = 4.5V (Notes 2 & 5) (Notes 2 & 6) (Notes 4 & 5) ID IDM Continuous Source Current (Body diode) (Notes 3 & 5) IS 4.0 -4.0 Pulsed Source Current (Body diode) (Notes 4 & 5) ISM 33.6 -26.8 Units V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 2 & 5) Power Dissipation Linear Derating Factor (Notes 2 & 6) PD N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 Thermal Resistance, Junction to Ambient (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) RθJA 100 70 58 Thermal Resistance, Junction to Lead (Notes 5 & 7) RθJL 51 TJ, TSTG -55 to +150 Notes: W mW/°C 2.14 17.2 (Notes 3 & 5) Operating and Storage Temperature Range Unit °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC2020USD Document number: DS32121 Rev. 3 - 2 2 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD Thermal Characteristics 10 RDS(ON) Limited -ID Drain Current (A) ID Drain Current (A) RDS(ON) DC 1 1s 100ms 100m 10ms 10m 100us 1s 100ms 1 1ms 100us One active die 0.1 10 10ms Single Pulse T amb= 25°C 10m One active die 0.1 DC 1 100m 1ms Single Pulse T amb= 25°C Limited 10 VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 80 60 25 mm x 25 mm 1oz FR4 One active die D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 100 25 mm x 25 mm 1oz FR4 1.5 Two active die One active die 1.0 0.5 0.0 0 Pulse Width (s) 50 75 100 125 150 Temperature (°C) Transient Thermal Impedance Maximum Power (W) 25 Derating Curve Single Pulse T amb= 25°C 100 One active die 25 mm x 25 mm 1oz FR4 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC2020USD Document number: DS32121 Rev. 3 - 2 3 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD Electrical Characteristics – Q1 N-CHANNEL @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(th) 0.5 RDS (ON) - Forward Transfer Admittance (Notes 8 & 9) Diode Forward Voltage (Note 8) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) |Yfs| VSD IS - 1.5 20 28 1.2 1.8 V Static Drain-Source On-Resistance (Note 8) 1.1 13 18 16 0.7 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 7A VGS = 2.5V, ID = 3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1149 157 142 1.51 6.0 11.6 2.7 3.4 11.67 12.49 35.89 12.33 - mΩ S V A pF Ω nC ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V VGS = 4.5V VDS = 10V ID = 9.4A VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics – Q1 N-CHANNEL 20 30 VGS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 20 VGS = 3.5V VGS = 3.0V VGS = 2.5V 15 VGS = 2.0V 10 15 VDS = 5V 10 T A = 150°C 5 TA = 125°C TA = 85°C 5 VGS = 1.8V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC2020USD Document number: DS32121 Rev. 3 - 2 TA = 25°C TA = -55°C 0 2 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 4 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMC2020USD 0.03 0.02 VGS = 2.5V 0.01 0 VGS = 4.5V 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 0.02 1.2 VGS = 4.5V ID = 10A VGS = 2.5V ID = 5A 0.6 -50 TA = 125°C T A = 85°C T A = -55°C 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.04 0.03 VGS = 2.5V ID = 5A 0.02 VGS = 4.5V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 30 1.6 1.4 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) T A = 25°C 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.2 20 ID = 1mA 1.0 0.8 T A = 150°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 0.8 VGS = 4.5V 30 1.6 1.0 0.04 T A = 25°C 15 ID = 250µA 0.6 10 0.4 5 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC2020USD Document number: DS32121 Rev. 3 - 2 5 of 11 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 10,000 C, CAPACITANCE (pF) f = 1MHz 1,000 Ciss Coss Crss 100 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 100,000 10,000 20 1,000 TA = 150°C T A = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 10V ID = 9.4A 8 6 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge DMC2020USD Document number: DS32121 Rev. 3 - 2 6 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD Electrical Characteristics – Q2 P-CHANNEL @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1.0 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(th) -0.4 RDS (ON) - Forward Transfer Admittance (Note 11 & 12) Diode Forward Voltage (Note 11) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13) |Yfs| VSD IS - -1.0 33 45 -1.0 -1.8 V Static Drain-Source On-Resistance (Note 11) -0.7 26 33 14 -0.7 - VDS = VGS, ID = -250μA VGS = -4.5V, ID = -6A VGS = -2.5V, ID = -3A VDS = -5V, ID = -4A VGS = 0V, IS = -1A - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1610 157 145 9.45 8.0 15.4 2.5 3.3 16.8 12.4 94.1 42.4 - mΩ S V A pF Ω nC ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -2.5V VDS = -10V ID = -4A VGS = -4.5V VGS = -4.5V, VDS = -10V, RG = 6Ω , ID = -1A 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics – Q2 P-CHANNEL 20 30 VGS = -10V VDS = -5V VGS = -3.0V VGS = -4.5V VGS = -4.0V 20 VGS = -2.5V -ID, DRAIN CURRENT (A) 25 -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = -2.0V 15 10 VGS = -1.8V 15 10 TA = 150°C 5 T A = 125°C 5 TA = 85°C 0 0 0 0.5 1.0 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristics DMC2020USD Document number: DS32121 Rev. 3 - 2 2.0 T A = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 13 Typical Transfer Characteristics 7 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated 0.06 0.05 0.04 -VGS = 2.5V 0.03 -VGS = 4.5V 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 -VGS = 4.5V -ID = 10A 0.8 -VGS = 2.5V -ID = 5A 0.6 -50 0.04 TA = 125°C 0.02 0 0.04 0.03 0.01 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) -VGS = 4.5V -ID = 10A 0.02 0 -50 20 TA = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature Document number: DS32121 Rev. 3 - 2 -VGS = 2.5V -ID = 5A -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature 0.2 DMC2020USD 5 10 15 20 -ID, DRAIN CURRENT (A) Fig. 15 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05 25 -I D = 250µA 0 0.06 1.0 0.4 TA = -55°C 0.01 30 -I D = 1mA TA = 85°C TA = 25°C 1.2 0.6 TA = 150°C 0.03 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature 0.8 VGS = 4.5V 0.05 30 1.6 1.0 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMC2020USD 8 of 11 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 1.2 November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated -IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) DMC2020USD 10,000 C, CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss 100 Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance 100,000 10,000 20 TA = 150°C TA = 125°C 1,000 100 TA = 85°C 10 TA = 25°C 1 0 5 10 15 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Drain-Source Leakage Current vs. Drain-Source Voltage -VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = -10V ID = -4A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Source Voltage vs. Total Gate Charge DMC2020USD Document number: DS32121 Rev. 3 - 2 9 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD h x 45° Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMC2020USD Document number: DS32121 Rev. 3 - 2 10 of 11 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2020USD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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