DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 1 MOSFETs diodes.com DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 2 THE LEADING EDGE... MOSFETS COMPANY OVERVIEW DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS Diodes Incorporated is a leading global provider of Discrete, Analog, and Logic semiconductors. Its global footprint includes sales offices in 5 countries and manufacturing locations in China, Europe and the USA. A focus on product innovation, cost reduction, acquisitions and customer service has made Diodes Incorporated an industry leader. Combining leading silicon and packaging technologies, Diodes provides a broad portfolio of discrete semiconductors comprising Bipolar Transistors, MOSFETs, Schottky diodes, SBR®, switching diodes and functional specific arrays to enable our customers’ next generation designs. The Diodes’ Analog IC portfolio consists of 6 main areas: Power Management, Standard Linear, Lighting, Sensors, Direct Broadcast by Satellite, and Applications Specific Standard Products. Diodes’ IC portfolio also includes Standard Logic products. SBR and PowerDI are registered trademarks of Diodes Incorporated. Page 2 A FOCUS ON PRODUCT INNOVATION DRIVEN BY CUSTOMER REQUIREMENTS HAS RESULTED IN LEADING-EDGE MOSFETS… Encompassing N- and P-channels, the portfolio ranges from 8V to 650V packaged in single, dual, complementary and H-Bridge (Quad) configurations. These are offered in a wide range of package options from the tiny DFN0606 to the thermally-efficient PowerDI®5060 (Power SO-8) and through-hole TO220 packages. With innovations in chip-scale packaging to enable the lowest RDS(ON) for a given footprint. Embracing both industry-standard and differentiated products, the broad portfolio has expanded to over 800 products from small-signal to power MOSFETs. Diodes Incorporated utilizes emerging technologies that are uniquely suited for specific applications, such as using shieldgate technology to reduce conduction and switching losses, which is ideal for BLDC motor driving. Diodes' lateral MOSFETs (LD-MOS) feature industry-leading Figure of Merit (FOM), which enables greater efficiency in DC-DC buck converters. The breadth of the Diodes’ MOSFET portfolio enables designers to select a device that is optimized for their end application, ranging from consumer to industrial to automotive segments. The Diodes portfolio is well suited for meeting the circuit requirements in: DC-DC Conversion Motor Control LED Lighting Battery Protection Load Switching Power Supplies Battery Chargers Audio Circuits Power-Over-Ethernet The majority of products in the Diodes MOSFET product portfolio are designed to meet the stringent requirements of AEC-Q101 reliability standard of the Automotive Electronic Council. Products with a ‘Q’ suffix indicate that the product is Automotive grade – the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive customers with PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites. Furthermore, all in-house packaging utilizes environmentally ‘green‘ mold compound. Diodes Incorporated’s MOSFET product development strategy is focused on high growth market segments such as Automotive, LED Lighting, Ethernet, Smartphones, and the Internet of Things. DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 3 MOSFETs INDEX 8V – 29V N-CHANNEL 4-6 8V – 29V P-CHANNEL 6-8 8V – 29V COMPLEMENTARY 9 DUAL, COMMON-SOURCE / DRAIN 10 30V N-CHANNEL 11-13 30V P-CHANNEL 13-14 30V COMPLEMENTARY 15 31V – 50V N-CHANNEL 16 31V – 50V P-CHANNEL 17 31V – 100V COMPLEMENTARY 18 51V – 99V N-CHANNEL 19-20 51V – 99V P-CHANNEL 21 100V PLUS N-CHANNEL 22-23 100V PLUS P-CHANNEL 23 PROTECTED MOSFETS 24 H-BRIDGE 25 HIGH TEMPERATURE AUTO FETS 26 MOSFET PACKAGE EVOLUTION 27 Page 3 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 4 8V – 29V N-CHANNEL Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) Min. Max. VGS (th) (V) Package DMN1019UFDE Single Yes a 12 a 8 a 11 a 0.69 a 10 a 12 a 14 a 0.35 0.8 2480 27.3 a a U-DFN2020-6 Type E DMN1019USN Single Yes 12 8 9.3 0.68 10 12 14 0.35 0.8 2480 27.3 SC59 DMN1025UFDB Dual Yes 12 10 6.9 1.7 25 30 38 0.4 1 917 12.6 U-DFN2020-6 Type B DMN1032UCB4 Single No 12 8 4.8 1.16 26 29 38 0.4 1.2 325 3.2 U-WLB1010-4 DMN1029UFDB Dual No 12 8 5.6 1.4 29 34 44 0.4 1 914 10.5 U-DFN2020-6 Type B DMN1045UFR4 Single Yes 12 8 3.2 0.5 45 64 85 0.4 1 390 4.8 X2-DFN1010-3 DMN1150UFB Single Yes 12 6 1.4 0.5 150 185 210 0.35 1 110 1.5 X1-DFN1006-3 DMN1260UFA Single Yes 12 8 0.5 0.36 366 520 950 0.4 1 65 0.96 X2-DFN0806-3 DMN2005UFG Single No 20 12 18.1 1.05 4.6 8.7 - 0.4 1.2 6495 68.8 POWERDI3333-8 DMN2009LSS Single No 20 12 12 2 9 12 - 0.5 1.2 2555 28.9 SO-8 DMN2011UFDE Single Yes 20 12 11.7 1.97 9.5 11 20 0.4 1 2248 24 U-DFN2020-6 Type E DMN2013UFDE Single Yes 20 8 10.5 0.66 11 13 - 0.5 1.1 2453 14.3 U-DFN2020-6 Type E DMN2015UFDE Single Yes 20 12 10.5 2.03 11.6 15 30 0.5 1.1 1779 19.7 U-DFN2020-6 Type E DMN2027USS Single No 20 12 10.5 1.5 12.5 19 - 0.7 1.3 1000 11.6 SO-8 DMN2020UFCL Single Yes 20 10 9 0.61 14 20 26 0.4 0.9 1788 21.5 X1-DFN1616-6 Type E a a a a a DMG6898LSD Dual Yes 20 12 9.5 1.28 16 23 - 0.5 1.5 1149 11.6 SO-8 DMN2020LSN Single Yes 20 12 6.9 0.61 20 28 - 0.5 1.5 1149 11.6 SC59 DMN2028USS Single Yes 20 12 9.8 2.8 20 28 - 0.6 1.3 1000 11.6 SO-8 DMN2022UFDF Single Yes 20 8 7.9 0.66 22 26 36 0.5 1 907 9.8 U-DFN2020-6 DMG9926USD Dual No 20 8 8 1.3 24 29 37 0.5 0.9 880 8.8 SO-8 DMG3414U Single No 20 8 4.2 0.78 25 29 37 0.5 0.9 830 9.6 SOT23 DMG6968U Single Yes 20 12 6.5 1.3 25 29 36 0.5 0.9 151 8.5 SOT23 Dual No 20 8 5.8 1.4 25 35 - 0.6 1.5 1171 10.4 SO-8 Single No 20 12 6.4 0.78 28 41 - 0.5 1.2 550 7.2 SOT23 DMN2029USD DMN2041L DMN2041LSD Dual No 20 12 7.6 1.16 28 41 - 0.5 1.2 550 7.2 SO-8 DMN2050L Single No 20 12 5.9 1.4 29 50 - 0.45 1.4 532 6.7 SOT23 DMG3420U Single No 20 12 5.5 0.74 35 48 91 0.5 1.2 435 5.4 SOT23 DMN2075U Single No 20 8 4.2 0.8 38 45 - 0.4 1 594 7 SOT23 Dual Yes 20 12 4.7 1.4 40 65 - 0.35 1.4 713 8 U-DFN2020-6 Type B ZXM64N02X Single No 20 12 5.4 1.1 40 50 - 0.7 - 1150 12.5 MSOP-8 ZXMN2B03E6 Single No 20 8 4.3 1.1 40 55 75 0.4 1 1160 14.5 SOT26 Dual No 20 12 4.5 1.42 45 55 - 0.4 1 389 5.7 U-DFN2020-6 Type B ZXMN2F30FH Single No 20 12 4.1 0.96 45 65 - 0.6 1.5 452 4.8 SOT23 DMN2075UDW Single No 20 8 2.8 0.58 48 59 70 0.4 1 594 7 SOT363 DMN2100UDM Single Yes 20 8 4 1.5 55 70 90 0.6 1 555 8.8 SOT26 ZXMN2A03E6 Single No 20 12 4.6 1.7 55 100 - 0.7 - 837 8.2 SOT26 ZXMN2B14FH Single No 20 8 3.5 1 55 75 100 0.4 1 872 11 SOT23 DMN2065UW Single No 20 12 2.8 0.7 56 65 93 0.35 1 400 5.4 SOT323 ZXMN2A14F Single No 20 12 3.4 1 60 110 - 0.7 - 544 6.6 SOT23 ZXMN2F34FH Single No 20 12 3.4 0.95 60 120 - 0.5 1.5 277 2.8 SOT23 DMN2046U Single Yes 20 12 3.4 1.26 72 110 - 0.4 1.4 292 3.8 SOT23 DMG2302U Single No 20 8 4.2 0.8 90 120 - 0.4 1 594 7 SOT23 DMN2112SN Single Yes 20 8 1.2 0.5 100 140 250 0.5 1.2 220 - SC59 DMN2114SN Single Yes 20 12 1.2 0.5 100 160 - 0.7 1.4 180 - SC59 DMN2215UDM Dual Yes 20 12 2 0.65 100 140 215 0.6 1 188 2.3 SOT26 ZXM62N02E6 Single No 20 12 3.2 1.1 100 125 - 0.7 - 470 5 SOT26 ZXMN2B01F Single No 20 8 2.1 0.625 100 150 200 0.4 1 370 4.8 SOT23 DMN2230U Single No 20 12 2 0.6 110 145 230 0.5 1 188 2.3 SOT23 ZXMN2A01E6 Single No 20 12 2.5 1.1 120 225 - 0.7 - 310 3.1 SOT26 ZXMN2A01F Single No 20 12 1.9 0.625 120 225 - 0.7 - 310 3.1 SOT23 ZXMN2AMC Dual No 20 12 2.9 1.5 120 300 - 0.7 - 310 3.1 W-DFN3020-8 Type B DMN2041UFDB DMN2050LFDB Page 4 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 5 8V – 29V N-CHANNEL (CONTINUED) Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) Min. Max. VGS (th) (V) Package ZXMD63N02X Dual No a 20 a 12 a 2.5 a 1.25 a 130 a 150 a a 0.7 a 3 360 4.5 a a MSOP-8 DMN2250UFB Single Yes 20 8 1.4 0.5 170 230 250 0.35 1 100 1.4 X1-DFN1006-3 DMN2300U Single Yes 20 8 1.4 0.55 175 240 360 0.45 0.95 70 1.6 SOT23 DMN2300UFB Single Yes 20 8 1.3 0.47 175 240 360 0.45 0.95 70 1.6 X1-DFN1006-3 DMN2300UFB4 Single Yes 20 8 1.3 0.5 175 240 360 0.45 0.95 70 1.6 X2-DFN1006-3 ZXM61N02F Single No 20 12 1.7 0.625 180 240 - 0.7 - 170 2.7 SOT23 DMN2300UFL4 Dual Yes 20 8 2.1 1.39 195 260 380 0.45 0.95 70 1.6 X2-DFN1310-6 DMN2300UFD Single Yes 20 8 1.7 0.96 200 260 400 0.45 0.95 70 1.6 X1-DFN1212-3 ZXMN2088DE6 Dual No 20 8 1.7 0.9 200 240 310 0.4 1 279 3.8 SOT26 DMG1012T Single Yes 20 6 0.63 0.28 400 500 700 0.5 1 61 0.74 SOT523 DMN2500UFB4 Single Yes 20 6 0.81 0.46 400 500 700 0.5 1 62 0.74 X2-DFN1006-3 DMN2501UFB4 Single Yes 20 8 1 0.5 400 500 700 0.5 1 88 1.1 X2-DFN1006-3 DMG1012UW Single Yes 20 6 1 0.29 450 600 750 0.5 1 61 0.74 SOT323 DMG1024UV Dual Yes 20 6 1.4 0.53 450 600 750 0.5 1 61 0.74 SOT563 a a a a DMN2550UFA Single Yes 20 8 0.6 0.36 450 550 750 0.4 1 54 0.88 X2-DFN0806-3 DMN2400UV Dual Yes 20 12 1.33 0.53 500 700 900 0.5 0.9 38 0.5 SOT563 DMN2004DMK Dual Yes 20 8 0.54 0.225 550 700 900 0.5 1 87 - SOT26 DMN2004DWK Dual Yes 20 8 0.54 0.2 550 700 900 0.5 1 87 - SOT363 DMN2004K Single Yes 20 8 0.63 0.35 550 700 900 0.5 1 87 0.9 SOT23 DMN2004TK Single Yes 20 8 0.54 0.15 550 700 900 0.5 1 87 - SOT523 PROBABLY THE SMALLEST, MOST POWERFUL MOSFET IN THE WORLD…. Did you know? DFN0606 miniature MOSFETs feature a footprint measuring only 0.6mm x 0.6mm. Each device takes 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, making it an ideal choice in next-generation wearable technology, tablets, smartphones, watches, headsets and the Internet of Things (IoT). Able to deliver an equivalent or better electrical performance than many of the larger package parts, the DMN2990UFZ (20V N-channel), the DMN31D5UFZ (30V N-channel) and DMP32D9UFZ (30V P-channel) have been designed to minimize on-state resistance while still maintaining a superior switching performance. What’s more, a typical threshold voltage of less than a volt means a lower turn-on, suiting single-cell operation, and enabling low-voltage circuits to fully enhance the MOSFET channel. These tiny MOSFETs are as a result a good choice in high efficiency power management duties and as general purpose interfacing and simple analog switches. Circuit power density gets a boost too, with the DFN0606 parts achieving a power dissipation of 300mW. Further to this, they maintain the low profile of 0.4mm that is associated with DFN1006; making both the DFN0606 and DFN0806 packages ideal for thin profile applications. THE DIODES ADVANTAGE N-channel and P-channel in the tiny DFN0606, DFN0806 & DFN1006 DFN0606 = 0.36mm² footprint with 0.4mm off-board height Occupies 40% less board space than the DFN1006/SOT883 package, enabling designers to shrink designs while maintaining performance. Higher power density These DFN leadless package is thermally efficient with a thermal resistance of only 135ºC/W enabling a greater power density to be achieved. Turn-on VGS(th) < 1V These MOSFETs have VGS(th) < 1V enabling low voltage applications to fully enhance the MOSFET channel under low power conditions. Page 5 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 6 8V – 29V N-CHANNEL (CONTINUED) Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) Min. Max. VGS (th) (V) Package DMN2004VK Dual Yes a 20 a 8 a 0.54 a 0.25 a 550 a 700 a 900 a 0.5 1 87 a a SOT563 DMN2004WK Single Yes 20 8 0.54 0.2 550 700 900 0.5 1 87 - SOT323 DMN2400UFB Single Yes 20 12 0.75 0.47 550 750 900 0.5 0.9 38 0.5 X1-DFN1006-3 DMN2400UFB4 Single Yes 20 12 0.75 0.47 550 750 900 0.5 0.9 38 0.5 X2-DFN1006-3 DMN2400UFD Single Yes 20 12 0.9 0.8 600 800 1000 0.45 1 38 0.5 X1-DFN1212-3 DMN21D2UFB Single Yes 20 12 0.76 0.9 990 1200 2400 0.4 1 29 0.47 X1-DFN1006-3 a a a a a DMN2990UDJ Dual Yes 20 8 0.45 0.35 990 1200 1800 0.4 1 28 0.5 SOT963 DMN2990UFA Single Yes 20 8 0.51 0.4 990 1200 1800 0.4 1 28 0.5 X2-DFN0806-3 DMN2990UFZ Single Yes 20 8 0.25 0.32 990 1200 1800 0.4 1 28 0.5 X2-DFN0606-3 Dual Yes 20 10 0.3 0.4 1500 1700 3500 0.53 0.9 37 - X2-DFN1310-6 DMN2005LP4K Single Yes 20 10 0.3 0.4 1500 1700 3500 0.53 0.9 37 - X2-DFN1006-3 DMN2005LPK Single Yes 20 10 0.44 0.45 1500 1700 3500 0.53 0.9 37 - X1-DFN1006-3 DMN26D0UDJ Dual Yes 20 10 0.24 0.3 3000 4000 6000 0.45 1.05 14.5 - SOT963 DMN26D0UFB4 Single Yes 20 10 0.24 0.35 3000 4000 6000 0.45 1.05 14.5 - X2-DFN1006-3 DMN26D0UT Single Yes 20 10 0.23 0.3 3000 4000 6000 0.5 1 14.5 - SOT523 DMN2005K Single Yes 20 10 0.3 0.35 - 1700 3500 0.53 0.9 37 - SOT23 DMN2600UFB Single Yes 25 8 1.3 0.54 350 450 600 0.45 1 75 0.85 X1-DFN1006-3 DMG301NU DMN2005DLP4K Single Yes 25 8 0.26 0.4 4000 5000 - 0.7 1.1 27.9 0.36 SOT23 DMG6301UDW Dual Yes 25 8 0.24 0.3 4000 5000 - 0.65 1.5 27.9 0.36 SOT363 DMN25D0UFA Single Yes 25 8 0.32 0.63 4000 5000 - 0.6 1.2 27.9 0.36 X2-DFN0806-3 DMN3150LW Single No 28 12 1.6 0.35 88 138 - 0.62 1.4 300 - SOT323 IDS (A) PD (W) 8V – 29V P-CHANNEL Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (pF) (nC) Min. Max. VGS (th) (V) Package DMP1012UCB9 Single Yes a 8 a 6 a 10 a 1.6 a 10 a 14 a a 0.4 1.1 817 8.1 a a U-WLB1515-9 DMP1022UFDF Single Yes 12 8 9.5 2.1 15.3 19 26.5 0.35 0.8 2712 28.6 U-DFN2020-6 DMP1022UFDE Single Yes 12 8 9.1 2 16 21.5 26 0.35 0.8 2712 28.6 U-DFN2020-6 Type E DMP1018UCB9 Single Yes 12 6 7.6 1.8 18 22 - 0.4 1.3 457 4.9 U-WLB1515-9 DMP1245UFCL Single Yes 12 8 6.6 1.7 29 45 60 0.3 0.95 1600 16.1 X1-DFN1616-6 Type E DMP1045U Single Yes 12 8 5.2 1.3 31 45 75 0.3 1 1400 15.8 SOT23 DMP1045UFY4 Single Yes 12 8 5.5 1.7 33 41 - 0.3 1 1400 14.8 X2-DFN2015-3 DMP1055UFDB Dual Yes 12 8 3.9 1.4 59 81 115 0.4 1 1028 13 U-DFN2020-6 Type B DMP1046UFDB Dual No 12 8 3.8 1.4 61 81 115 0.4 1 915 10.7 U-DFN2020-6 Type B DMP1080UCB4 Single Yes 12 6 3.3 1.6 80 93 - 0.4 1 213 2.5 U-WLB1010-4 DMP1200UFR4 Single Yes 12 8 2 1.26 100 160 200 0.35 1 510 5.8 X2-DFN1010-3 DMP1096UCB4 Single Yes 12 6 2.6 1.6 102 116 - 0.4 1 251 3.7 U-WLB1010-4 DMP1555UFA Single Yes 12 8 0.2 0.36 800 1100 3000 0.4 1 60 0.84 X2-DFN0806-3 DMG3415UFY4 Single Yes 16 8 2.5 0.49 39 52 65 0.3 1 282 10 X2-DFN2015-3 DMP2006UFG Single No 20 10 17.5 2.3 5.5 7.5 12 0.4 1 5404 64 POWERDI3333-8 DMP2008UFG Single No 20 8 14 2.4 8 9.8 13 0.4 1 6909 72 POWERDI3333-8 DMP2018LFK Single Yes 20 12 9.2 2.1 16 20 - 0.45 1.2 4748 53 U-DFN2523-6 DMP2021UFDF Single Yes 20 8 9 2.1 16 22 40 0.35 1 2950 34 U-DFN2020-6 DMP2022LSS Single No 20 12 10 2.5 16 22 - 0.6 1.1 2444 28.1 SO-8 ZXM66P02N8 Single No 20 12 8 1.56 25 45 - 0.7 - 2100 43.3 SO-8 a Page 6 a a a a DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 7 8V – 29V P-CHANNEL Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) (CONTINUED) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) Min. Max. VGS (th) (V) Package DMP2023UFDF Single a No 20 a 8 a 7.6 a 2.1 27 a 32 50 a 0.4 a 1 2000 a 27 a U-DFN2020-6 Type F DMP2033UCB9 Single Yes 20 6 5.8 1.8 33 45 65 0.4 1.1 382 5.4 U-WLB1515-9 DMP2035U Single Yes 20 8 4 0.81 35 45 62 0.4 1 1610 15.4 SOT23 DMP2035UVT Single Yes 20 12 6 2 35 45 62 0.4 1.5 1610 15.4 TSOT26 DMP2066UFDE Single No 20 12 7.5 2.1 36 56 75 0.4 1.1 1537 14.4 U-DFN2020-6 Type E DMP2038USS Single No 20 8 6.5 2.5 38 56 - 0.4 1.1 1520 14.4 SO-8 DMP2066LDM Single No 20 12 4.6 1.25 40 70 - 0.6 1.2 880 10.1 SOT26 DMP2066LSD Dual No 20 12 5.8 2 40 70 - 0.6 1.2 880 10.1 SO-8 DMP2066LSN Single No 20 12 4.6 1.25 40 70 - 0.6 1.2 880 10.1 SC59 DMP2066LSS Single No 20 12 6.5 2.5 40 70 - 0.6 1.2 880 10.1 SO-8 DMG3415U Single Yes 20 8 4 0.9 42.5 53 71 0.3 1 294 9.1 SOT23 DMP2100U Single Yes 20 10 4.3 1.3 43 75 - 0.3 1.4 220 9.1 SOT23 DMP2066LVT Single No 20 8 4.5 1.8 45 65 - 0.4 1.5 1537 14.4 SOT26 DMP2047UCB4 Single Yes 20 6 4.1 1.6 47 60 - 0.4 1.2 218 2.3 U-WLB1010-4 DMG2305UX Single No 20 8 4.2 1.4 52 100 200 0.5 0.9 820 10.2 SOT23 DMP2069UFY4 Single Yes 20 8 2.5 0.53 54 69 90 0.3 1 214 9.1 X2-DFN2015-3 DMP2305U Single No 20 8 4.2 1.4 60 90 113 0.5 0.9 800 7.6 SOT23 DMP2305UVT Single No 20 8 4.23 1.64 60 90 113 0.5 0.9 800 7.6 TSOT26 DMP2033UVT Single No 20 8 4.2 1.7 65 100 200 0.5 0.9 900 10.4 TSOT26 DMP2070UCB6 Single No 20 8 3.5 1.47 70 90 110 0.4 1 210 2.9 U-WLB1510-6 DMP2160UFDB Dual No 20 12 3.8 1.4 70 85 - 0.45 0.9 536 6.5 U-DFN2020-6 Type B DMP2160UFDBQ Dual No 20 12 3.8 1.4 70 85 - 0.45 0.9 536 6.5 U-DFN2020-6 Type B Single No 20 12 3 1.4 72 123 - 0.6 1.25 460 7.3 SOT23 Dual No 20 12 4.6 1.2 75 110 - 0.45 1.1 595 6.5 SO-8 DMP2130L Single No 20 12 3 1.4 75 125 - 0.6 1.25 460 7.3 SOT23 DMP2160U Single No 20 12 3.3 1.4 75 96 140 0.4 0.9 627 6.5 SOT23 DMG2301U Single No 20 8 2.7 0.8 80 110 - 0.45 1 600 6.5 SOT23 DMP2130LDM Single No 20 12 3.4 1.25 80 130 - 0.6 1.25 460 7.3 SOT26 DMP2060UFDB Single Yes 20 12 3.2 1.4 90 137 - 0.35 1.4 881 11 U-DFN2020-6 Type B ZXM64P02X Single No 20 12 3.5 1.1 90 130 - 0.7 - 950 5 MSOP-8 DMG3413L Single No 20 8 3 1.3 95 125 190 0.6 1.3 857 9 SOT23 MOSFET + Schottky No 20 12 3.4 1.64 95 120 150 0.4 1.3 561 7 U-DFN2020-6 Type B DMP2160UW Single No 20 12 1.5 0.35 100 120 160 0.4 0.9 627 6.5 SOT323 DMP2215L Single No 20 12 2.7 1.1 100 215 - 0.45 1.25 250 4.3 SOT23 DMP2225L Single No 20 12 2.6 1.1 110 225 - 0.45 1.25 250 4.3 SOT23 MOSFET + Schottky No 20 20 3.3 1.8 125 - - 0.5 2.2 410 3.7 SO-8 DMP2104LP Single No 20 12 1.5 0.5 150 200 240 0.45 1 330 - X1-DFN1411-3 DMP2104V Single No 20 12 1.9 0.85 150 200 240 0.45 1 330 - SOT563 DMP2240UDM Single No 20 12 2 0.6 150 200 240 0.45 1 340 - SOT26 DMP2240UW Single No 20 12 1.5 0.25 150 200 240 0.45 1 340 - SOT323 DMP2240UWQ Single No 20 12 1.5 0.25 150 200 240 0.45 1 340 - SOT323 DMP2200UFCL Single Yes 20 8 1.7 1.6 200 290 390 0.4 1.2 184 2.2 U-DFN1616-6 ZXM62P02E6 Single No 20 12 2.3 1.1 200 375 - 0.7 - 350 4.6 SOT26 DMP2200UDW Single Yes 20 8 0.9 0.6 260 500 1000 0.4 1.2 184 2.1 SOT363 MSOP-8 a DMP2123L DMG9933USD DMS2095LFDB DMS2085LSD ZXMD63P02X a a a a a Dual No 20 12 1.7 1.25 270 400 - 0.7 - 300 4.1 DMP2012SN Single Yes 20 12 0.7 0.5 300 500 - 0.5 1.2 178 - SC59 DMP21D0UFB Single Yes 20 8 1.17 0.99 495 690 960 0.45 1.2 76.5 1 X1-DFN1006-3 DMP21D0UFB4 Single Yes 20 8 1.17 0.99 495 690 960 0.45 1.2 76.5 1 X2-DFN1006-3 DMP21D0UFD Single Yes 20 8 1.14 0.93 495 730 960 0.45 1.2 76.5 1 X1-DFN1212-3 DMP21D0UT Single Yes 20 8 0.65 0.33 495 690 960 0.45 1.2 76.5 1 SOT523 ZXM61P02F Single No 20 12 0.9 0.625 600 900 - 0.7 1.5 160 3.5 SOT23 Page 7 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 8 8V – 29V P-CHANNEL Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) (CONTINUED) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) Min. Max. VGS (th) (V) Package DMG1013T Single a Yes 20 a 6 a 0.46 a 0.27 700 a 900 1300 a 0.5 a 1 62 a 0.58 a SOT523 DMG1013UW Single Yes 20 6 0.82 0.31 750 1050 1500 0.5 1 62 0.62 SOT323 DMG1023UV Dual Yes 20 6 1.03 0.53 750 1050 1500 0.5 1 62 0.62 SOT563 DMP2004DMK Dual Yes 20 8 0.55 0.5 900 1400 2000 0.5 1 95 - SOT26 DMP2004DWK Dual Yes 20 8 0.43 0.25 900 1400 2000 0.5 1 95 - SOT363 a DMP2004K a a a a a Single Yes 20 8 0.6 0.55 900 1400 2000 0.5 1 95 - SOT23 DMP2004VK Dual Yes 20 8 0.53 0.4 900 1400 2000 0.5 1 95 - SOT563 DMP2004WK Single Yes 20 8 0.4 0.25 900 1400 2000 0.5 1 95 - SOT323 DMP21D2UFA Single Yes 20 8 0.33 0.36 1000 1200 1600 0.3 1 55 0.8 X2-DFN0806-3 DMP21D5UFB4 Single Yes 20 8 0.7 0.95 1000 1500 2000 0.5 1 46 0.5 X2-DFN1006-3 DMP21D5UFD Single Yes 20 8 0.6 0.8 1000 1500 2000 0.5 1 46 0.5 X1-DFN1212-3 DMP2004TK Single Yes 20 8 0.43 0.15 1100 1600 2400 0.5 1 95 - SOT523 DMP22D6UT Single Yes 20 8 0.43 0.15 1100 1600 2600 0.5 1 95 - SOT523 DMP22D4UFA Single Yes 20 8 0.33 0.4 1900 2400 3400 0.4 1 29 0.4 X2-DFN0806-3 DMP210DUFB4 Single Yes 20 8 0.2 0.35 5000 7000 10000 0.5 1 14 - X2-DFN1006-3 Dual Yes 20 8 0.2 0.33 5500 7500 11500 0.45 1.15 14 - SOT963 DMP2039UFDE4 Single Yes 25 8 7.3 2.4 26 33 40 0.4 1 2600 28.2 X2-DFN2020-6 DMP2039UFDE Single Yes 25 8 6.7 2 27 34 40 0.4 1 2580 28.2 U-DFN2020-6 Type E DMP2540UCB9 Single Yes 25 6 5.2 1.8 40 50 60 0.4 1.1 342 4.8 U-WLB1515-9 DMG302PU Single Yes 25 8 0.17 0.45 10000 - - 0.65 1.5 27.2 0.35 SOT23 DMP213DUFA Single Yes 25 8 0.166 0.36 10000 13000 - 0.65 1.5 27.2 0.35 X2-DFN0806-3 DMP210DUDJ OPTIMIZED COMPLEMENTARY MOSFETS ENHANCE BUCK CONVERTER POWER DENSITY Did you know? Aimed at increasing the power density of DC-DC converters, the DMC1028UFDB complementary MOSFET pair integrates an Nchannel MOSFET and a P-channel MOSFET in a single DFN2020 package. The design is customized for point-of-load (POL) converters that step down from 3.3V to 1V for core voltage supply to ASICs. THE DIODES ADVANTAGE Target applications are Ethernet network controllers and processors used in such equipment as routers, network interface controllers (NICs), switches, digital subscriber line (DSL) adaptors, servers, and set-top boxes (STBs). Complementary N+P Integrating N-channel and P-channel into single DFN2020 saves space and overall doubles the power density by replacing two single DFN2020 parts. Buck converters implemented using a separate PWM controller and external MOSFETs enhance design flexibility and provide for distributed heat dissipation from the switching elements. Optimized MOSFETs for increased efficiency The N-channel has a low RDS(ON) = 19mΩ at VGS=3.3V to minimize the conduction losses as it is mostly on for two-thirds of the switching cycle; and the P-channel has a low QG = 5nC at VGS=3.3V to minimize the switching losses. The performance parameters of the DMC1028UFDB MOSFETs have been optimized to maximize efficiency in 3.3V to 1V buck converters while driving loads up to 3A. Page 8 P-channel for high-side Implementing the control FET on the high-side in the buck converter with a P-channel simplifies the design and reduces the component count compared to using an N-channel solution that would require a charge pump. DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 9 8V – 29V Part Number COMPLEMENTARY Configuration ESD V VGS Type Diode DS (Y/N) (V) (±V) N a DMC1017UPD a DMC25D1UVT DMC1028UFDB DMC1029UFDB DMC1030UFDB DMC1229UFDB DMC2020USD DMC2038LVT DMC2041UFDB ZXMD63C02X DMC2700UDM DMG1016UDW DMG1016V DMC2004DWK DMC2004LPK DMC2004VK DMC2400UV DMC2990UDJ Complementary No 12 a 8 a IDS (A) PD (W) RDS(ON) (mΩ max) at VGS= @TA=25°C @TA=25°C 4.5V 9.5 a a 2.3 VGS (th) (V) CISS typ @ QG typ @ VGS = ½VDSS VGS = 10V (pF) (nC) Min. Max. 2.5V 1.8V 17 a 25 a a 0.6 1.5 1787 a 18.6 32 53 - 0.6 1.5 2100 23.7 4000 - - 0.65 1.5 27.6 0.4 55 70 100 0.35 1.5 9.7 24.5 25 32 40 0.4 1 787 10.5 80 100 140 0.4 1 576 6.7 29 34 44 0.4 1 914 10.5 61 81 115 0.4 1 915 10.7 34 40 50 0.4 1 1003 12.2 59 81 115 0.4 1 1028 13 29 34 44 0.4 1 914 10.5 61 81 115 0.4 1 915 10.7 20 28 - 0.5 1.5 1149 11.6 33 45 - 0.4 1 1610 15.4 35 43 56 0.4 1 400 5.7 74 110 168 0.4 1 530 7 40 65 - 0.35 1.4 713 8 90 137 - 0.35 1.4 881 11 130 150 - 0.7 - 360 6 270 400 - 0.7 - 300 5.25 400 500 700 0.5 1 65 0.74 700 900 1300 0.5 1 63 0.62 450 600 750 0.5 1 65 0.74 750 1050 1500 0.5 1 63 0.62 400 500 700 0.5 1 65 0.74 700 900 1300 0.5 1 63 0.62 900 a a a POWERDI5060-8 a P No 12 8 6.9 N Yes 25 8 0.5 P Yes 12 8 3.9 N Yes 12 8 6 P Yes 20 8 3.4 N No 12 8 5.6 P No 12 8 3.8 N Yes 12 8 5.1 P Yes 20 8 3.9 N No 12 8 5.6 P No 12 8 3.8 N Yes 20 10 7.8 P Yes 20 10 6.3 N No 20 12 4.5 P No 20 12 3.1 N Yes 20 12 4.7 P Yes 20 12 3.2 N No 20 12 2.4 P No 20 12 1.7 N Yes 20 6 1.34 P Yes 20 6 1.14 N Yes 20 6 1.07 P Yes 20 6 0.85 N Yes 20 6 0.87 P Yes 20 6 0.64 N Yes 20 8 0.54 P Yes 20 8 0.43 N Yes 20 8 0.75 P Yes 20 8 0.6 N Yes 20 8 0.67 P Yes 20 8 0.53 N Yes 20 8 1 P Yes 20 8 0.7 N Yes 20 8 0.45 P Yes 20 8 0.31 Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary 1.3 1.36 1.4 1.36 1.4 1.8 1.1 1.4 1.25 1.12 0.33 0.53 0.25 0.5 0.4 1 0.35 Package a TSOT26 U-DFN2020-6 Type B U-DFN2020-6 Type B U-DFN2020-6 Type B U-DFN2020-6 Type B SO-8 TSOT26 U-DFN2020-6 Type B MSOP-8 SOT26 SOT363 SOT563 550 700 0.5 1 85 - 900 1400 2000 0.5 1 95 - 550 700 0.5 1 85 - 900 1400 2000 0.5 1 95 - 550 700 0.5 1 85 - 900 1400 2000 0.5 1 95 - 500 700 0.5 0.9 37 0.5 1000 1500 2000 0.5 1 46 0.5 990 1800 0.5 1 27.6 0.5 1900 2400 3400 0.4 1 28.7 0.4 SOT363 900 X1-DFN1612-6 900 SOT563 900 SOT563 1200 SOT963 Page 9 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 10 DUAL, COMMON-SOURCE / DRAIN RDS(ON) (mΩ max) ESD V IDS (A) PD (W) VGS (th) (V) CISS typ @ QG typ @ VGS at VGS= Diode DS VGS = ½VDSS VGS = 4.5V (Y/N) (V) (±V) @T =25°C @T =25°C 4.5V 2.5V 1.8V Min. Max. (nC) (pF) A A Part Number Configuration DMN1033UCB4 N+N Common Drain a Yes a 12 a 6 a 5.5 a 1.45 a 26 a 31 33 a 0.35 a 0.7 2500 37 a a U-WLB1818-4 DMN2011UFX N+N Common Drain Yes 20 12 12.2 2.1 9.5 13 - 0.3 1 2248 24 V-DFN2050-4 DMN2013UFX N+N Common Drain Yes 20 8 10 0.78 11.5 14 - 0.5 1.1 2607 32.4 W-DFN5020-6 DMN2014LHAB N+N Common Drain Yes 20 12 9 0.8 13 18 28 0.3 1.1 1550 16 U-DFN2030-6 Type B DMN2016LHAB N+N Common Drain Yes 20 12 7.5 1.2 15.5 20 30 0.5 1.1 1550 16 U-DFN2030-6 Type B DMN2016UTS N+N Common Drain Yes 20 8 8.6 0.88 14.5 16.5 - 0.4 1 1495 16.5 TSSOP-8 DMN2016LFG N+N Common Drain Yes 20 8 5.2 0.77 18 22 30 0.4 1.1 1472 16 U-DFN3030-8 DMN2019UTS N+N Common Drain Yes 20 12 5.4 0.78 21 24 31 0.35 0.95 143 8.8 TSSOP-8 DMN2028UFDH N+N Common Drain Yes 20 12 6.8 1.1 22 26 36 0.5 1 151 8.5 POWERDI3030-8 DMG6968UTS N+N Common Drain Yes 20 12 5.2 1 23 27 34 0.35 0.95 143 8.8 TSSOP-8 DMG8601UFG N+N Common Drain Yes 20 12 6.1 0.92 23 27 34 0.35 1.05 143 8.8 U-DFN3030-8 DMG6968UDM N+N Common Drain Yes 20 12 6.5 0.85 24 28 34 0.5 0.9 143 8.8 SOT26 DMG8822UTS N+N Common Drain No 20 8 4.9 0.87 25 29 37 0.5 0.9 841 9.6 TSSOP-8 DMN2040LTS N+N Common Drain No 20 12 6.7 0.89 26 36 - 0.5 1.2 570 5.2 TSSOP-8 DMG9926UDM N+N Common Drain No 20 8 4.2 0.98 28 32 40 0.5 0.9 856 8.3 SOT26 DMP2035UTS P+P Common Drain Yes 20 8 6.04 0.89 35 45 62 0.4 1 1610 15.4 TSSOP-8 DMP2100UCB9 P+P Common Source Yes 20 6 4 1.6 100 130 175 0.4 0.9 232 3.3 U-WLB1515-9 DMG5802LFX N+N Common Drain Yes 24 12 6.5 0.98 15 20 - 0.6 1.5 1080 14.5 W-DFN5020-6 40 - 0.5 1.3 2564 29 X1-WLB1818-4 0.6 1.2 38 - SOT353 a DMN2023UCB4 DMN32D2LDF N+N Common Drain Yes 24 12 6 1.45 26 N+N Common Source Yes 30 10 0.4 0.28 1200 a 1500 2200 a Package a CHIP-SCALE BI-DIRECTIONAL MOSFET SAVES SPACE Did you know? The DMN2023UCB4 bi-directional MOSFET provides superior protection for charging 1- and 2-cell lithium batteries. Its low on-state resistance reduces power loss while its thin, chip-scale packaging allows designers to use the space saved to increase battery capacity. Target end-markets include smartphones, tablets, cameras, portable media players, and similar consumer products where size, weight and battery life are all key performance factors. Designed to minimize on-state resistance for lower power loss, the DMN2023UCB4 delivers an RDS(ON) of less than 26mΩ. In addition, its dual, N-channel common-drain configuration particularly suits the charging circuits required for 1- and 2-cell lithium batteries, which commonly use a low-side battery switch. For applications requiring a high-side connection, Diodes Incorporated also offers the DMP2100UCB9, which provides a dual P-channel common-source MOSFET design. The above features, coupled with a chip-scale package footprint of just 1.8mm x 1.8mm and a thickness of <0.4mm, make this new generation, bi-directional MOSFET well-suited for battery management, load switch and battery protection applications where smaller form factors are important. Other features include a gate threshold voltage of less than 1V, which is important to fully enhance the channel under low voltage operation, and built-in gate protection against electrostatic discharge (ESD) voltages of >2kV. Page 10 THE DIODES ADVANTAGE Bi-directional, dual N-channel and P-channel MOSFETs configured for low-side and high-side operation as the battery protection switch, respectively. Bi-directional MOSFET Combining dual-power MOSFETs back-to-back to block current flow in both directions when off and have low conduction losses when on. Small footprint 1.8mm x 1.8mm footprint and a thickness of < 0.4mm enables more space in the battery pack for additional cells to increase mAh capacity. Low on-resistance and threshold DMN2023UCB4 has RSS(on) <26mΩ minimizes conduction losses to increase battery life while VGS(th) <1V ensures the FET is fully enhanced under low operating voltage. DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 11 30V N-CHANNEL Part Number ESD V VGS Configuration Diode DS (Y/N) (V) (±V) IDS (A) RDS(ON) (mΩ max) at VGS= PD (W) @TA=25°C @TA=25°C 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS= ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) 1.8V Package DMN3008SFG Single No 30 a 20 a 17.6 0.9 4.6 a 5.5 a a a - 3690 a 41 a 86 a a POWERDI3333-8 DMN3007LSS Single No 30 20 16 2.5 7 10 - - 2714 31.2 64.2 SO-8 DMN3010LFG Single No 30 20 30 0.9 8.5 10.5 - - 2075 16.1 37 POWERDI3333-8 DMN3010LSS Single No 30 20 16 2.5 9 13 - - 2096 9 13 SO-8 DMG8880LK3 Single No 30 20 16.5 1.68 9.3 14 - - 1289 14.4 27.6 TO252 (DPAK) DMN3010LK3 Single No 30 20 43 1.6 9.5 11.5 - - 2075 17 37 TO252 (DPAK) DMG7702SFG Single No 30 20 12 0.89 10 15 - - 1296 14.7 31.6 POWERDI3333-8 DMS3012SFG Single No 30 20 12 0.89 10 15 - - 1296 14.7 31.6 POWERDI3333-8 DMG4406LSS Single No 30 20 10.3 1.5 11 15 - - 1281 12.5 26.7 SO-8 DMG7430LFG Single No 30 20 10.5 0.9 11 15 - - 1281 12.5 26.7 POWERDI3333-8 DMN3016LFDE Single No 30 20 10 0.73 12 16 - - 1415 11.3 25.1 U-DFN2020-6 Type E DMN3016LK3 Single No 30 20 12.4 1.6 12 16 - - 1415 11.3 25.1 TO252 (DPAK) DMN3016LSS Single No 30 20 10.3 1.5 12 16 - - 1415 11.3 25.1 SO-8 DMS3014SFG Single No 30 12 9.5 1 13 14 - - 2296 45.7 19.3 POWERDI3333-8 DMS3016SFG Single No 30 12 10.2 0.98 13 16 - - 1886 19.5 44.6 POWERDI3333-8 DMS3016SSSA Single No 30 12 9.8 1.54 13 16 - - 1849 18.5 43 SO-8 DMN4468LSS Single No 30 20 10 1.52 14 20 - - 867 - 18.85 SO-8 DMN4800LSS Single No 30 25 8.6 1.46 14 20 - - 798 8.7 - SO-8 DMN4800LSSL Single No 30 20 8 1.46 14 20 - - 798 8.7 - SO-8 DMN3015LSD Dual No 30 20 8.4 1.2 15 18 - - 1415 11.3 25.1 SO-8 DMG4468LFG Single No 30 20 7.62 0.99 15 23.5 - - 867 - 18.85 U-DFN3030-8 DMG4800LSD Dual No 30 25 8.4 1.17 16 22 - - 798 8.6 - SO-8 DMG4468LK3 Single No 30 20 9.7 1.68 16 25 - - 867 - 18.85 TO252 (DPAK) ZXMN3B04N8 Single No 30 12 8.9 3 - 25 40 - 2480 23.1 - SO-8 DMG4800LK3 Single No 30 25 10 1.71 17 24 - - 798 8.7 - TO252 (DPAK) DMG4800LFG Single No 30 20 7.44 0.94 17 24 - - 798 8.7 - U-DFN3030-8 DMN3030LFG Single No 30 25 8.6 0.9 18 27 - - 751 9 17.4 POWERDI3333-8 DMN3025LFG Single No 30 25 7.5 2 18 28 - - 605 5.3 11.6 POWERDI3333-8 DMN3030LSS Single No 30 25 9 2.5 18 30 - - 741 7.6 16.7 SO-8 DMN3029LFG Single No 30 25 8 1 18.6 26.5 - - 580 5.3 11.3 POWERDI3333-8 DMG7410SFG Single No 30 25 8 1 20 27 - - 580 5.3 11.3 POWERDI3333-8 DMG4822SSD Dual No 30 20 10 1.42 20 31 - - 479 5 10.5 SO-8 DMN3025LSS Single No 30 20 7.2 1.4 20 31 - - 641 6 13.2 SO-8 DMN3018SFG Single Yes 30 25 8.5 1 21 35 - - 697 6 13.2 POWERDI3333-8 DMN3018SSS Single Yes 30 25 7.3 1.4 21 35 - - 697 6 13.2 SO-8 DMG4496SSS Single No 30 25 10 1.42 21.5 29 - - 493.5 4.7 10.2 SO-8 DMN3033LSD Dual No 30 20 6.9 2 22 27 - - 725 6.4 13 SO-8 DMN3018SSD Dual No 30 25 6.7 1.5 22 30 - - 697 6 13.2 SO-8 DMN3026LVT Single No 30 20 6.6 1.2 23 30 - - 643 5.7 12.5 TSOT26 DMG4466SSS Single No 30 25 10 1.42 23 33 - - 479 5 10.5 SO-8 DMG4466SSSL Single No 30 20 10 1.42 23 33 - - 479 5 10.5 SO-8 DMG7408SFG Single No 30 20 7 1 23 33 - - 479 5 10.5 POWERDI3333-8 DMN3024SFG Single No 30 20 7.5 0.9 23 33 - - 479 5 10.5 POWERDI3333-8 DMN3024LSD Single No 30 20 7.2 2 24 36 - - 608 6.3 12.9 SO-8 DMN3024LSS Single No 30 20 8.5 2.8 24 36 - - 608 6.3 12.9 SO-8 DMN3024LK3 Single No 30 20 14.4 8.9 24 39 - - 608 6.3 12.9 TO252 (DPAK) a ZXMN3F31DN8 a a a a a Dual No 30 20 7.3 2.1 24 39 - - 608 6.3 12.9 SO-8 DMN3404L Single No 30 20 4.2 0.72 28 42 - - 498 5.3 11.3 SOT23 DMN3032LE Single No 30 20 5.6 1.8 29 35 - - 498 4.1 11.3 SOT223 DMN3033LSN Single No 30 20 6 1.4 30 40 - - 755 10.5 @ 5V - SC59 DMG6402LVT Single No 30 20 6 1.75 30 42 - - 498 - 11.4 TSOT26 Page 11 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 12 30V N-CHANNEL (CONTINUED) Part Number ESD V VGS Configuration Diode DS (Y/N) (V) (±V) IDS (A) RDS(ON) (mΩ max) at VGS= PD (W) @TA=25°C @TA=25°C 10V 4.5V DMN3033LDM Single a No a 30 20 6.9 2 33 40 DMN3051L Single No 30 20 4.5 0.7 38 64 DMN3051LDM Single No 30 20 4 0.9 38 DMN3070SSN Single Yes 30 20 4.2 0.78 40 DMN3053L Single No 30 12 4 0.76 45 DMN3115UDM Single Yes 30 8 3.2 0.9 DMN3067LW Single No 30 12 2.6 1.1 ZXMN3F30FH Single No 30 20 4.6 ZXMN3A03E6 Single No 30 20 4.6 DMG3402L Single No 30 12 DMN3065LW Single No 30 12 DMN3150L Single No 30 12 DMN3112SSS Single No 30 20 DMG3418L Single No 30 12 ZXMN3B14F Single No 30 12 DMN3200U Single Yes 30 8 DMN3135LVT Dual No 30 20 ZXMN3A14F Single No 30 20 DMN3110S Single No 30 20 DMN3300U Single No 30 ZXMN3B01F Single No ZXMN3A01E6 Single ZXMN3A01F Single ZXMN3AMC Dual a ZXMD63N03X DMN100 DMN3190LDW ZXM61N03F 2.5V Package - 755 6.4 13 a a SOT26 - - 424 - 9 SOT23 64 - - 424 4.3 8.6 SOT26 50 80 - 697 6 13.2 SC59 50 55 - 676 7.3 17.2 SOT23 - 60 80 - 476 - - SOT26 - 67 98 - 447 4.6 - SOT323 1.4 47 65 - - 318 - 7.7 SOT23 1.7 50 65 - - 600 6.9 @ 5V 12.6 SOT26 4 1.4 52 65 85 - 464 5.5 11.7 SOT23 4 0.77 52 65 85 - 465 5.5 11.7 SOT323 3.8 1.4 54 72 115 - 305 3.7 8.2 SOT23 6 2.5 57 112 - - 268 - - SO-8 4 1.4 60 70 150 - 464 5.5 - SOT23 3.5 1.5 - 80 140 - 568 6.7 - SOT23 2.2 0.65 - 90 110 200 290 - - SOT23 3.5 0.84 60 100 - - 305 4.1 9 TSOT26 3.9 1.5 65 95 - - 448 - 8.6 SOT23 3.3 0.74 73 110 - - 306 4.1 8.6 SOT23 12 2 0.7 - 150 200 250 193 - - SOT23 30 12 2 0.806 - 150 240 - 258 2.93 - SOT23 No 30 20 3 1.7 120 180 - - 190 2.3 @ 5V 3.9 SOT26 No 30 20 2 0.625 120 180 - - 190 2.3 @ 5V 3.9 SOT23 No 30 20 3.7 2.45 120 180 - - 190 2.3 3.9 W-DFN3020-8 Type B MSOP-8 a a a a a a - CISS typ @ QG typ @ QG typ @ VGS= ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) 1.8V a a a a a Dual No 30 20 2.3 1.25 135 200 - - 290 - 8 Single Yes 30 20 1.1 0.5 150 170 - - 150 - 5.5 SC59 Dual Yes 30 20 1 0.32 190 335 - - 87 0.9 2 SOT363 Single No 30 20 1.4 0.625 220 300 - - 150 - 4.1 SOT23 ® DIODES’ SCHOTTKY INTEGRATED MOSFET THE DIODES ADVANTAGE Diodes Incorporated has designed and patented a proprietary process that integrates a N-channel MOSFET and an anti-parallel schottky diode into a single die. Targeted at the low-side synchronous MOSFET position of synchronous point-of-load (PoL) converters, the lower VSD and Qrr of the DIOFET® family reduce conduction and switching losses improving the overall efficiency of the PoL converter lowering its operating temperature. Low RDS(ON) The low RDS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs. DIOFET is a registered trademark of Diodes Incorporated. Page 12 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 13 30V N-CHANNEL (CONTINUED) Part Number ESD V VGS Configuration Diode DS (Y/N) (V) (±V) IDS (A) RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS= ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) 1.8V PD (W) @TA=25°C @TA=25°C Package DMN3730U Single Yes a 30 8 0.94 0.71 a 460 a 560 a 730 a 64.3 a 1.6 a - a SOT23 DMN3730UFB Single Yes 30 8 0.91 0.69 - 460 560 730 64.3 1.6 - X1-DFN1006-3 DMN3730UFB4 Single Yes 30 8 0.91 0.69 - 460 560 730 64.3 1.6 - X2-DFN1006-3 DMN3900UFA Single Yes 30 8 0.65 0.49 - 760 930 1500 42.2 0.7 - X2-DFN0806-3 DMN31D5UFZ Single Yes 30 12 0.22 0.393 - 1500 2000 3000 22.2 0.35 - X2-DFN0606-3 DMN32D2LDF Dual Yes 30 10 0.4 0.28 - - 1500 2200 39 - - SOT353 DMN32D2LFB4 Single Yes 30 10 0.3 0.35 - - 1500 2200 39 - - X2-DFN1006-3 DMN32D2LV Dual Yes 30 10 0.4 0.4 - - 1500 2200 39 - - SOT563 DMN313DLT Single Yes 30 20 0.27 0.28 - 2000 @ 4V 3200 - 36.3 0.5 - SOT523 DMN33D8LDW Dual Yes 30 20 0.25 0.35 2400 3000 7000 20000 48 0.55 1.23 SOT363 DMN33D8LV Dual Yes 30 20 0.35 0.43 2400 3000 7000 - 48 0.55 1.23 SOT563 DMN63D8LDW Dual Yes 30 20 0.26 0.3 2800 4200 13000 - 22 0.43 0.87 SOT363 DMN63D8LV Dual Yes 30 20 0.26 0.45 2800 4200 13000 - 22 0.43 0.87 SOT563 DMN33D8L Single Yes 30 20 0.25 0.35 3000 3800 @ 5V - - 50 - 1.2 SOT23 DMN33D8LT Single Yes 30 20 0.115 0.3 7000 - 48 0.55 1.23 SOT523 a a a a a a - 5000 @ 4V a a 30V P-CHANNEL Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) Package DMP3010LPS Single a No 30 a 20 a 36 2.18 7.5 10 a a 6234 a 59.2 a 126.2 a a POWERDI5060-8 DMG4413LSS Single No 30 20 12 2.2 7.5 10.2 - 4965 46 @ 5V - SO-8 DMP3010LK3 Single No 30 20 17 1.7 8 10.2 - 6234 59.2 - TO252 (DPAK) DMP3012LPS Single No 30 20 13.2 1.29 9 12 - 6807 66 139 POWERDI5060-8 DMP3017SFG Single Yes 30 25 11.5 0.94 10 18 - 2246 20.5 41 POWERDI3333-8 DMP3015LSS Single No 30 20 13 2.5 11 17 - 2748 30 60.4 SO-8 DMG4407SSS Single Yes 30 25 9.9 1.45 13 14 - 2246 20.5 41 SO-8 DMG7401SFG Single Yes 30 25 9.8 0.94 13 25 - - 20.5 41 POWERDI3333-8 DMP3017SFK Single Yes 30 25 10.4 1 14 25 - 2207 21.6 42.7 U-DFN2523-6 DMP3020LSS Single No 30 25 12 2.5 14 25 - 1802 15.3 30.7 SO-8 DMP3008SFG Single No 30 20 8.6 0.9 17 25 - 2230 23 47 POWERDI3333-8 DMP3035LSS Single No 30 25 11 2 18 36 - 1655 15.3 30.7 SO-8 DMG4435SSS Single No 30 25 7.3 2.5 20 29 @ 5V - 1614 18.9 @ 5V 35.4 SO-8 DMP3035SFG Single No 30 25 8.5 0.95 20 29 @ 5V - 1633 17 35.5 POWERDI3333-8 DMP3028LFDE Single No 30 20 6.8 0.66 25 38 - - 10.9 22 U-DFN2020-6 DMP3028LSD Single No 30 20 6 1.3 25 38 - 1241 10.9 22 SO-8 DMP3037LSS Single No 30 20 5.8 1.2 32 50 - 931 9.7 19.3 SO-8 DMP3065LVT Single Yes 30 20 4.9 1.2 42 65 - 587 6.3 12.3 TSOT26 DMP3056LDM Single No 30 20 4.3 1.25 45 65 - 948 10.1 21.1 SOT26 DMP3056LSD Dual No 30 20 6.9 2.5 45 65 - 722 6.8 13.7 SO-8 DMP3056LSS Single No 30 20 7.1 2.5 45 65 - 722 6.8 13.7 SO-8 ZXMP3A16G Single No 30 20 7.5 3.9 45 70 - 1022 17.2 @ 5V 29.6 SOT223 DMP3050LSS Single No 30 25 4.8 1.7 45 80 - 620 5.1 10.5 SO-8 DMG3401LSN Single No 30 12 3 0.8 50 60 85 1326 11.6 25.1 SC59 DMG3407SSN Single No 30 20 4 1.1 50 72 - 582 6.5 13.3 SC59 a a a a a a Page 13 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 14 30V P-CHANNEL (CONTINUED) Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) Package DMP3050LVT Single a No 30 a 25 a 4.5 1.8 50 90 a a 620 a 5.1 a 10.5 a a TSOT26 DMP3099L Single No 30 20 3.8 1.08 65 99 - 563 5.2 11 SOT23 DMP3098LDM Single No 30 20 4 1.25 65 115 - 336 4 7.8 SOT26 DMP3098LSD Dual No 30 20 4.4 1.8 65 115 - 336 4 7.8 SO-8 DMP3098LSS Single No 30 20 5.3 2.5 65 115 - 336 4 7.8 SO-8 DMP3085LSD Dual No 30 20 3.9 1.1 70 95 - 563 5.2 11 SO-8 DMP3085LSS Single No 30 20 3.8 1.3 70 95 - 563 5.2 11 SO-8 ZXMP3A17E6 Single No 30 20 4 1.7 70 110 - 630 8.28 @ 5V 15.8 SOT26 DMP3098L Single No 30 20 3.8 1.08 70 120 - 336 4 7.8 SOT23 DMP3105LVT Single No 30 12 3.9 1.15 75 98 150 839 9 19.8 TSOT26 ZXM64P03X Single No 30 20 3.8 1.1 75 100 - 825 - 46 MSOP-8 DMP3130L Single No 30 12 3.5 0.7 77 95 150 432 5.9 12 SOT23 ZXMP3F30FH Single No 30 20 3.4 1.4 80 140 - 370 - 7 SOT23 DMG2307L Single No 30 20 2.5 0.76 90 134 - 371.3 4 8.2 SOT23 DMP3160L Single No 30 20 2.7 1.08 122 190 - 384.4 4 ZXM62P03E6 Single No 30 12 1.5 0.625 150 230 - 330 a ZXMD63P03X a a a a a 8.2 SOT23 10.2 SOT26 Dual No 30 20 2 1.25 185 270 - 270 - 7 MSOP-8 ZXMP3A13F Single No 30 20 1.6 0.806 210 330 - 206 3.8 @ 5V 6.4 SOT23 DMP3030SN Single Yes 30 20 0.7 0.5 250 450 - 160 - - SC59 ZXM61P03F Single No 30 20 1.1 0.625 350 550 - 140 - 4.8 SOT23 DMP31D0U Single Yes 30 8 0.67 0.71 - 1000 1500 76 0.9 1.5 @ 8V SOT23 DMP31D0UFB4 Single Yes 30 8 0.76 0.92 - 1000 1500 76 0.9 1.5 @ 8V X2-DFN1006-3 DMP32D4S Single Yes 30 20 0.3 0.37 2400 4000 16000 51.2 0.6 1.2 SOT23 DMP32D4SFB Single Yes 30 20 0.4 0.5 2400 4000 16000 51 0.6 1.3 X1-DFN1006-3 DMP32D4SW Single Yes 30 20 0.25 0.3 2400 4000 16000 51.2 0.6 1.2 SOT323 DMP32D9UFZ Single Yes 30 10 0.2 0.39 - 5000 6000 22.5 0.35 - X2-DFN0606-3 NEW GENERATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET THE DIODES ADVANTAGE The PowerDI5060 package has a typical Rthj-c of 2.1ºC/W which is 10 times lower than the familiar SO-8 package. This superior thermal performance improves power dissipation, reducing MOSFET junction temperature, enabling cooler, more reliable running. The low typical RDS(ON) of the DMP3010LPS ensures that on state losses are kept to a minimum during load switching and battery charging. The DMP3010LPS is qualified to AECQ-101 standard and is RoHS compliant. Page 14 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 15 30V Part Number COMPLEMENTARY Configuration ESD V VGS Type Diode DS (Y/N) (V) (±V) N a DMC3016LSD a Complementary No Complementary N No P DMC3025LSD Complementary N No P DMC3021LSD Complementary N No P DMC3021LK4 Complementary N No P ZXMC3F31DN8 Complementary N No P ZXMC3A18DN8 Complementary N No P DMC3028LSDX Complementary N No P DMC3028LSD Complementary N No P DMC3032LSD Complementary N No P ZXMC3A16DN8 Complementary N No P ZXMC3A17DN8 Complementary N No P DMG6601LVT Complementary N No P DMG6602SVT Complementary N No P ZXMC3AMC Complementary N No P ZXMD63C03X Complementary N No P DMC31D5UDJ Complementary N P TO252 (DPAK) 30 a 20 8.2 30 20 6.2 a Yes PD (W) a a P DMC3018LSD RDS(ON) (mΩ max) CISS typ @ QG typ @ at VGS= VGS = ½VDSS VGS = 4.5V (pF) (nC) @TA=25°C @TA=25°C 10V 4.5V IDS (A) 16 20 1415 11.3 25.1 28 38 1241 10.9 22 a 1.2 QG typ @ VGS = 10V (nC) a a a a a 30 20 9.1 30 20 6 30 20 6.5 30 20 4.2 30 20 8.5 30 20 7 30 20 9.4 30 20 6.8 30 20 7.3 30 20 5.3 30 20 7.6 30 20 6.3 30 20 5.5 30 20 5.8 30 20 7.1 30 20 7.4 30 20 8.1 30 20 7 30 20 6.4 30 20 5.4 30 20 5.4 30 20 4.4 30 12 3.8 30 12 2.5 30 20 3.4 30 20 2.8 30 20 3.7 30 20 2.7 30 20 2.3 30 20 2 30 12 0.22 30 12 0.2 SOT223 2.5 1.2 2.5 2.75 2.1 2.1 1.2 2.1 2.5 2.1 2.1 0.85 0.84 2.45 1.25 0.35 SOT23 Package SO-8 a a 20 32 631 5.9 12.4 45 65 722 7 13.7 20 32 501 4.6 9.8 45 85 590 5.1 10.5 21 32 767 7.8 16.1 39 53 1002 10 21.1 21 32 751 9 17.4 39 53 1039 10.1 21.1 24 39 608 - 12.9 45 80 670 - 12.7 25 30 1800 19.4 @ 5V 36 35 50 1603 25 @ 5V 45 27 35 641 6 13.2 25 41 1241 10.9 22 28 45 472 5.2 10.5 25 41 1678 16.4 31.6 32 46 404.5 - 9.2 39 53 1002 10.1 21.1 35 50 796 9.2 17.5 48 70 970 12.9 24.9 50 65 600 6.9 @ 5V 12.2 70 110 630 8.3 @ 5V 15.8 55 65 422 5.4 12.3 110 142 541 6.5 13.8 60 100 290 4 9 95 140 350 4 7 120 180 190 2.3 3.9 210 330 206 3.8 6.4 135 200 290 - 8 185 270 270 - 7 - 1500 22.6 0.38 - - 5000 21.8 0.35 - SOT26 SO-8 SO-8 SO-8 SO-8 TO252-4 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 TSOT26 TSOT26 W-DFN3020-8 Type B MSOP-8 SOT963 DFN 1006 Page 15 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 16 31V – 50V N-CHANNEL Part Number ESD V IDS (A) PD (W) VGS Configuration Diode DS (Y/N) (V) (±V) @T =25°C @T =25°C A A RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V CISS typ @ QG typ @ VGS = ½VDSS VGS = 4.5V (nC) (pF) QG typ @ VGS = 10V (nC) Package DMN4008LFG Single a No a 40 a 20 19.2 2.3 7.5 a 10 a 20 @ 3.3V a 3537 a 34 a 74 a POWERDI3333-8 DMN4010LK3 Single No 40 20 39 1.6 11.5 14.5 - 1810 - 37 TO252 (DPAK) DMN4020LFDE Single No 40 20 8 0.66 20 28 - 1060 - 19.1 U-DFN2020-6 Type E DMN4010LFG Single No 40 20 11.5 2.45 12 15 - 1810 17 37 POWERDI3333-8 DMN4030LK3 Single No 40 20 13.7 8.9 30 50 - 604 6.5 12.9 TO252 (DPAK) DMN4040SK3 Single No 40 20 13.8 8.9 30 54 - 945 8.4 18.6 TO252 (DPAK) DMN4026SSD Dual No 40 20 9 1.8 24 32 - 1060 8.8 19.1 SO-8 DMN4034SSS Single No 40 20 7.2 2.8 34 59 - 453 4.9 10 SO-8 DMN4027SSD Dual No 40 20 7.1 2.1 27 47 - 604 6.3 12.9 SO-8 ZXMN4A06G Single No 40 20 7 3.9 50 75 - 770 @ 40V - 18.2 SOT223 DMN4031SSD Dual No 40 20 7 2.6 31 50 - 945 8.4 18.6 SO-8 DMN4036LK3 Single No 40 20 12.2 8.5 36 61 - 453 4.9 9.2 TO252 (DPAK) DMN4034SSD Dual No 40 20 6.3 2.1 34 59 - 453 4.9 10 SO-8 DMT5015LFDF Single No 50 20 9.1 1.97 15 23 - 902 6 14 U-DFN2020-6 Type F DMN53D0U Single Yes 50 12 0.3 0.52 - 2000 @ 5V 2500 37 0.6 - SOT23 DMN5010VAK Single Yes 50 20 0.28 0.25 - 2000 @ 5V 2500 50 @ max - - SOT563 DMN53D0LW Single No 50 20 0.36 0.32 DMN55D0UT Single Yes 50 12 0.16 0.2 DMN5L06DMK Single Yes 50 20 0.305 DMN53D0L Single Yes 50 20 0.5 DMN53D0LDW Single Yes 50 20 0.36 DMN53D0LT Single Yes 50 20 DMN53D0LV Single Yes 50 20 BSN20 Single No 50 20 DMN5L06K Single Yes 50 20 DMN5L06TK Single Yes 50 DMN5L06VAK Single Yes DMN5L06VK Single Yes DMN5L06WK Single Dual a DMN5L06DWK BSS138 BSS138DW a a a 2000 3000 @ 5V a a - 45.8 0.6 1.2 SOT323 - 4000 @ 4V 5000 25 @ 10V - - SOT523 0.4 - 2000 @ 5V 2500 50 @ max - - SOT26 0.37 1600 2500 4500 46 0.6 - SOT23 0.31 1600 2500 4500 46 0.6 - SOT363 0.35 0.3 1600 2500 4500 46 0.6 - SOT523 0.35 0.43 1600 2500 4500 46 0.6 - SOT563 0.5 0.6 1800 2000 - 21.8 @ 10V - 800 SOT23 0.3 0.35 - 2000 @ 5V 2500 50 @ max - - SOT23 20 0.28 0.15 - 2000 @ 5V 2500 50 @ max - - SOT523 50 20 0.28 0.25 - 2000 @ 5V 2500 50 @ max - - SOT563 50 20 0.28 0.25 - 2000 @ 5V 2500 50 @ max - - SOT563 Yes 50 20 0.3 0.25 - 2000 @ 5V 2500 50 @ max - - SOT323 Yes 50 20 0.305 0.25 - 2000 @ 5V 2500 50 @ max - - SOT363 Single No 50 20 0.2 0.3 3500 - - 50 max @ 10V - - SOT23 Dual No 50 20 0.2 0.2 3500 - - 50 max @ 10V - - SOT363 BSS138W Single No 50 20 0.2 0.2 3500 - - 50 max @ 10V - - SOT323 DMB54D0UV Single Yes 50 12 0.16 0.25 - 4000 @ 4V 5000 25 @ 10V - - SOT563 AUTOMOTIVE ‘Q’ MOSFETS FOR REVERSE BATTERY PROTECTION Application Requirements Protect against reverse polarity connection of the battery during vehicle maintenance. During the reconnection of a vehicle's battery it is possible to reverse the battery polarities causing damage to the vehicle's electronics. REVERSE BATTERY PROTECTION CIRCUIT DMP4015SPSQ D Simple, low cost, and minimal component count S Minimal power losses G Pulse ruggedness to ISO7637 VBat AEC-Q101 and PPAP required EMI Emissions Key Products: 40V P-channel MOSFETs DMP4015SPSQ in PowerDI5060 DMP4015SSSQ in SO-8 Page 16 DMP4015SK3Q in TO252 (DPAK) Load DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 17 31V – 50V P-CHANNEL Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) RDS(ON) (mΩ max) at VGS= PD (W) @TA=25°C @TA=25°C 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) Package DMP4015SK3 P a No 40 a 25 a 14 3.5 11 a 15 a a 4234 a 47.5 @ -5V a - TO252 a(DPAK) DMP4015SK3Q P No 40 25 14 3.5 11 15 - 4234 47.5 @ -5V - TO252 (DPAK) DMP4015SPS P No 40 25 17 2.1 11 15 - 4234 47.5 @ -5V 47.5 POWERDI5060-8 DMP4015SPSQ P No 40 25 17 2.1 11 15 - 4234 47.5 @ -5V - POWERDI5060-8 DMP4015SSS P No 40 25 10.1 1.82 11 15 - 4234 47.5 @ -5V - SO-8 DMP4015SSSQ P No 40 25 10.1 1.82 11 15 - 4234 47.5 @ -5V - SO-8 DMP4025LK3 P No 40 20 8.6 2.78 25 45 - 1643 14 33.7 TO252 (DPAK) DMP4025LSD P+P No 40 20 7.6 2.14 25 45 - 1640 14 33.7 SO-8 DMP4025LSS P No 40 20 8 2.4 25 45 - 1640 14 33.7 SO-8 DMP4025SFG P No 40 20 7.2 1.95 25 40 - 1643 14 33.7 POWERDI3333-8 DMP4047LFDE Single No 40 20 6 2.1 33 50 - 1382 11.2 23.2 U-DFN2020-6 DMP4047SSD Dual No 40 20 6.5 1.8 45 55 - 1154 10.6 21.5 SO-8 DMP4050SSD Dual No 40 20 5.2 2.1 50 79 - 674 6.9 13.9 SO-8 DMP4050SSS Single No 40 20 6 2.8 50 79 - 674 6.9 13.9 SO-8 DMP4051LK3 Single No 40 20 10.5 8.9 51 85 - 674 7 14 TO252 (DPAK) ZXMP4A16G Single No 40 20 6.4 3.9 60 100 - 1007 13.6 @ 5V 26.1 SOT223 ZXMP4A16K Single No 40 20 9.9 9.5 60 100 - 965 16.5 @ 5V 29.6 TO252 (DPAK) ZXMP4A57E6 Single No 40 20 3.7 1.7 80 150 - 833 7 15.8 SOT26 BS250P Single No 45 20 0.23 0.7 14000 - - 60 @ -10V - - E-Line BS250F Single No 45 20 0.09 0.33 14000 - - 25 @ -10V - - SOT23 SOT363 a a a a a a BSS84DW Dual No 50 20 0.13 0.3 - 10000 @ 5V - 45 max - - ZVP4105A Single No 50 20 0.175 0.625 - 10000 @ 5V - 40 max - - E-Line BSS84 Single No 50 20 0.13 0.3 - 10000 @ 5V - 45 max - - SOT23 SOT563 BSS84V Dual No 50 20 0.13 0.15 - 110000 @ 5V - 45 max - - BSS84W Single No 50 20 0.13 0.2 - 10000 @ 5V - 45 max - - SOT323 DMP56D0UFB Single Yes 50 8 0.2 0.425 - 6000 @ -4V 8000 50.54 0.58 - X1-DFN1006-3 8000 DMP56D0UV Dual Yes 50 8 0.16 0.4 - 6000 @ -4V 50.54 0.58 - SOT563 DMP58D0LFB Single Yes 50 20 0.31 1.22 - 8000 @ -5V 18000 27 - - X1-DFN1006-3 DMP58D0SV Dual Yes 50 20 0.16 0.4 - 8000 @ -5V 27 - - SOT563 - MOSFETS FOR 3-PHASE BLDC MOTOR 3-PHASE BLDC CIRCUIT Peak current During startup the coils are energized by a high peak current, up to five times greater than the continuous current rating. dV/dt false-triggering Commutating the coils induces rapid dV/dt changes on the MOSFET drain which could cause false turn on by coupling charge onto the gate. This can be avoided with the appropriate low (CGD x RG) and increasing VGS(TH). Phase A Driver Switching losses In each commutation, the MOSFET is switching in the coil current as the drain voltage collapses. With a high torque current in the coil then the MOSFET switching time needs to be minimized to reduce the switching power losses. Vcc DMTH4004SPSQ A B C Vcc Phase C Driver High torque current Under high motor torque the coil current increases and the conduction losses (RDS(ON)) in the MOSFET are to be minimized to ensure the junction temperature does not exceed the maximum rating. Vcc Phase B Driver MOSFET Application Requirements Key products DMT series: shielded-gate MOSFETs with reduced conduction and switching losses. Page 17 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 18 31V – 100V COMPLEMENTARY Part Number Configuration DMC4047LSD Complementary Type N VGS (±V) 40 a 20 7 40 20 5.1 40 20 9 @ t<10S 40 20 6.5 @ t<10S 40 20 7.5 40 20 7.3 a a No Complementary N No P DMC4040SSD Complementary N No P DMC4028SSD Complementary N No P DMC4050SSD Complementary N No P ZXMC4A16DN8 Complementary N No P BSS8402DW Complementary N No P DMC6040SSD Complementary N No P ZXMC4559DN8 Complementary N No P DMC6070LFDH Complementary N No P DMG1029SV Complementary N No P ZXMC10A816N8 Complementary a IDS (A) N P No PD (W) a a P DMC4029SSD RDS(ON) (mΩ max) CISS typ @ QG typ @ QG typ @ at VGS= VGS = ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) @TA=25°C @TA=25°C 10V 4.5V ESD V DS Diode (Y/N) (V) 1.8 24 a 32 a 1060 a 8.8 19.1 45 55 1154 10.6 21.5 24 32 1060 8.8 19.1 45 55 1154 10.6 21.5 25 40 1790 16 37.6 25 45 1643 14 33.7 a a a 40 20 7.2 40 20 5.2 40 20 5.5 40 20 5.8 40 20 5.2 40 20 4.7 60 20 0.115 50 20 0.13 60 20 6.5 60 20 3.9 60 20 4.7 60 20 3.9 60 20 3.1 60 20 2.4 60 20 0.5 60 20 0.36 100 20 2.1 100 20 2.2 2.14 2.16 2.14 28 49 604 6.5 12.9 50 79 674 7 14 45 60 1790 - 37.56 45 60 1643 - 33.66 50 75 770 @ 40V - 17 60 100 1000 15 @ 5V 26 7500 @ 5V 22 @ 25V - - - - 0.2 10000 @ 5V 45 max @ -25V - 2.2 1.4 1 2.1 SO-8 a a 1.8 2.1 Package 40 55 1130 9.4 20.8 110 130 1030 9.5 19.4 55 75 1063 @ 30V 11 @ 5V 20.4 85 125 1021 @ -30V 12.1 @ -5V 24.2 85 120 731 @ 20V 5.2 11.5 150 250 612 @ -20V 4.3 8.9 1700 3000 30 @ 25V 0.3 - 4000 6000 25 @ -25V 0.28 - 230 300 497 - 9.2 235 320 717 - 16.5 SO-8 SO-8 SO-8 SO-8 SO-8 SOT363 SO-8 SO-8 POWERDI3030-8 SOT563 SO-8 DMC4040SSD 40V VDS COMPLEMENTARY DUAL MOSFET THE DIODES ADVANTAGE Strong customer relationships and a deep understanding of their end applications are the primary drivers of the Diodes product development strategy. For example, Diodes Incorporated has recently worked with one of its major customers to develop a 40V complementary pair to meet the stringent requirements of brushless DC motor (BLDC) circuits. The result of this collaboration is the DMC4040SSD. A 40V VDS complementary dual that features matched RDS(ON), to ensure motor load losses are balanced and minimized, and is able to handle continuous currents of 6A and peak start up currents of up to 5 times continuous. The DMC4040SSD is suited to use in 24V DC motor system controlling cooling and extractor fans, pumps, compressors and printer heads. More information available in Application Note AN76. Page 18 The DMC4040SSD features matched RDS(ON) of 25mΩ ensuring motor load losses are balanced and minimized. DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 19 51V – 99V N-CHANNEL Part Number ESD V DS Configuration Diode (Y/N) (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) Package DMT6008LFG Single a Yes a 60 a 12 a 13 a 2.2 7.5 a 11.5 a - 2713 a 22.4 50.4 a a POWERDI3333-8 DMT6010LFG Single No 60 20 13 2.2 7.5 11.5 - 2090 19.3 41.3 POWERDI3333-8 DMN6013LFG Single No 60 20 10.3 2.1 13 18 - 2577 26.6 55.4 POWERDI3333-8 DMT6016LFDF Single No 60 20 8.9 1.9 16 27 - 864 8.4 17 U-DFN2020-6 DMT6016LPS Single No 60 20 10.6 2.7 16 24 - 864 8.4 17 POWERDI5060-8 DMT6016LSS Single No 60 20 9.2 2.1 18 28 - 864 8.4 17 SO-8 DMN6040SFDE Single No 60 20 6.5 2.03 38 47 - 1287 @ 50V 10.4 22.4 U-DFN2020-6 Type E DMN6040SK3 Single No 60 20 20 @ Tc 42 @ Tc 40 50 - 1287 @ 25V 10.4 22.4 TO252 (DPAK) DMN6040SSS Single No 60 20 5.5 2 40 55 - 1287 @ 25V 10.4 22.4 SO-8 DMN6040SSD Dual No 60 20 5 1.7 40 55 - 1287 @ 25V 10.4 22.4 SO-8 Single No 60 20 11.8 10.1 40 60 - 1426 15 29 TO252 (DPAK) a ZXMN6A09K ZXMN6A09DN8 a a a a Dual No 60 20 5.6 2.1 40 60 - 1407 @ 40V 12.4 @ 5V 24.2 SO-8 ZXMN6A09G Single No 60 20 7.5 3.9 40 60 - 1407 @ 40V 12.4 @ 5V 24.2 SOT223 DMN6040SVT Single No 60 20 6.3 1.8 44 60 - 1287 @ 25V 10.4 22.4 TSOT26 ZXMN6A25K Single No 60 20 10.7 9.85 50 70 - 1063 11 20.4 TO252 (DPAK) ZXMN6A25G Single No 60 20 6.7 3.9 50 70 - 1063 11 @ 5V 20.4 SOT223 ZXMN6A25N8 Single No 60 20 5.7 2.8 50 70 - 1063 11 @ 5V 20.4 SO-8 Dual No 60 20 5 2.1 50 70 - 1063 11 @ 5V 20.4 SO-8 Single No 60 20 5 2.8 66 97 - 502 5.4 10.3 SO-8 DMN6066SSD Dual No 60 20 4.4 2.1 66 97 - 502 5.4 10.3 SO-8 DMN6068LK3 Single No 60 20 8.5 8.5 68 100 - 502 5.55 10.3 TO252 (DPAK) DMN6068SE Single No 60 20 5.6 3.7 68 100 - 502 5.55 10.3 SOT223 DMN6069SE Single No 60 20 4.3 2.2 69 100 - 825 7.2 16 SOT223 Dual No 60 20 3.3 1.5 80 100 - 588 5.6 12.3 SO-8 ZXMN6A08K Single No 60 20 7.9 8.94 80 150 - 459 @ 40V 3.8 5.8 TO252 (DPAK) ZXMN6A08E6 Single No 60 20 3.5 1.7 80 150 - 459 @ 40V 3.7 5.8 SOT26 ZXMN6A08G Single No 60 20 5.3 3.9 80 150 - 459 @ 40V 4 @ 5V 5.8 SOT223 DMN6070SFCL Single No 60 20 3 1.8 85 120 @ 5V - 606 @ 20V 5.6 12.3 X1-DFN1616-6 Type E DMN6075S Single No 60 20 2.5 1.15 85 120 - 606 @ 20V 5.6 12.3 SOT23 Dual No 60 20 3.2 2.1 120 180 - 330 @ 40V 3 @ 5V 5.7 SO-8 ZXMN6A11G Single No 60 20 4.4 3.9 120 180 - 330 @ 40V 3 @ 5V 5.7 SOT223 ZXMN6A11Z Single No 60 20 3.6 2.6 120 180 - 330 @ 40V 3 @ 5V 5.7 SOT89 DMN6140L Single No 60 20 2.3 1.3 140 170 - 315 @ 40V 4.2 @ 5V 8.6 SOT23 ZXMN6A07Z Single No 60 20 2.5 2.6 250 350 - 166 @ 40V 1.65 @ 5V 3.2 SOT89 ZXMN6A07F Single No 60 20 1.4 0.806 250 350 - 166 @ 40V 1.65 @ 5V 3.2 SOT23 ZVN4306GV Single No 60 20 2.1 3 330 450 @ 5V - 350 max @ 25V - - SOT223 ZVN4306AV Single No 60 20 1.1 0.85 330 450 @ 5V - 350 max @ 25V - - E-Line ZVN4306G Single No 60 20 2.1 3 330 450 @ 5V - 350 max @ 25V - - SOT223 ZVN4306A Single No 60 20 1.1 1.1 330 450 @ 5V - 350 max @ 25V - - E-Line ZVN4206G Single No 60 20 1 2 1000 1500 @ 5V - 100 max @ 25V - - SOT223 ZVN4206GV Single No 60 20 1 2 1000 1500 @ 5V - 100 max @ 25V - - SOT223 ZVN4206A Single No 60 20 0.6 0.7 1000 1500 @ 5V - 100 max @ 25V - - E-Line ZVN4206AV Single No 60 20 0.6 0.7 1000 1500 @ 5V - 100 max @ 25V - - E-Line DMG1026UV Dual Yes 60 20 0.44 0.65 1800 2100 - 32 @ 25V 0.45 - SOT563 DMN62D1SFB Single Yes 60 20 0.41 0.47 1400 1600 - 40 @ 40V 0.73 1.39 X1-DFN1006-3 DMN62D0LFB Single Yes 60 20 0.1 0.47 - 32 @ 25V 0.45 - X1-DFN1006-3 DMN62D0LFD Single Yes 60 20 0.31 0.48 - 2000 @ 4V 2500 31 @ 25V 0.5 - X1-DFN1212-3 DMN62D1LFD Single Yes 60 20 0.4 0.5 - 2000 @ 4V 2500 36 @ 25V 0.55 - X1-DFN1212-3 DMN62D0SFD Single Yes 60 20 0.63 0.89 2000 3000 @ 5V - 30.2 @ 25V 0.39 0.87 X1-DFN1212-3 ZVN2106A Single No 60 20 0.45 0.7 2000 - - 75 max @ 18V - - E-Line ZVN2106G Single No 60 20 0.71 2 2000 - - 75 max @ 18V - - SOT223 ZXMN6A25DN8 DMN6066SSS DMN6070SSD ZXMN6A11DN8 2000 @ 4V 2500 Page 19 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 20 51V – 99V N-CHANNEL (CONTINUED) Part Number ESD V DS Configuration Diode (Y/N) (V) VGS (±V) IDS (A) RDS(ON) (mΩ max) at VGS= PD (W) @TA=25°C @TA=25°C 10V 4.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) 2.5V Package ZVN4106F Single a No 60 a 20 0.2 0.35 a 2500 5000 @ 5V a 35 max @ 25V a - a SOT23 DMN601TK Single Yes 60 20 0.3 0.15 2000 3000 @ 5V - 50 max @ 50V - - SOT523 DMN601WK Single Yes 60 20 0.3 0.2 2000 3000 - 50 max @ 25V - - SOT323 DMN601VK Dual Yes 60 20 0.305 0.25 2000 3000 - 50 max @ 25V - - SOT563 SOT363 a DMN601DWK a a a a a a a a Dual Yes 60 20 0.305 0.2 2000 3000 @ 5V - 50 max @ 25V - - Single Yes 60 20 0.3 0.35 2000 3000 @ 5V - 50 max @ 25V - - DMN601DMK Dual Yes 60 20 0.51 0.98 2400 4000 @ 5V - 30 @ 25V 304 DMN65D8LFB Single Yes 60 20 0.26 0.43 3000 4000 - 25 @ 25V - - DMN65D8L Single Yes 60 20 0.31 0.37 3000 4000 @ 5V - 22 @ 25V 0.43 0.87 SOT23 DMN65D8LW Single Yes 60 20 0.3 0.43 3000 4000 @ 5V - 22 @ 25V 0.43 0.87 SOT323 DMN66D0LW Single Yes 60 20 0.115 0.2 5000 6000 @ 5V - 23 @ 25V - - SOT323 Dual Yes 60 20 0.115 0.25 5000 6000 @ 5V - 23 @ 25V - - SOT363 Single Yes 60 20 0.115 0.2 5000 6000 @ 5V - 23 @ 25V - - SOT523 Dual Yes 60 20 0.2 0.4 6000 8000 - 22 @ 25V 0.43 0.87 SOT363 ZVN3306A Single No 60 20 0.27 0.625 5000 - - 35 max @ 18V - - E-Line ZVN3306F Single No 60 20 0.15 0.33 5000 - - 35 max @ 18V - - SOT23 BS170F Single No 60 20 0.15 0.33 5000 - - 60 @ 10V - - SOT23 MMBF170 Single No 60 20 0.5 0.3 5000 5300 - 22 @ 10V - - SOT23 VN10LF Single No 60 20 0.15 0.33 5000 7500 @ 5V - 60 - - SOT23 VN10LP Single No 60 20 0.27 0.625 5000 7500 @ 5V - 60 max @ 25V - - E-Line BS870 Single No 60 20 0.25 0.3 5000 - - 22 @ 25V - - SOT23 2N7002K Single Yes 60 20 0.38 0.54 2000 3000 @ 5V - 30 @ 25V 0.3 - SOT23 2N7002E Single No 60 20 0.25 0.37 3000 4000 - 22 @ 25V 223 - SOT23 2N7002A Single Yes 60 20 0.18 0.37 5000 6000 @ 5V - 23 @ 25V - - SOT23 DMN601K DMN66D0LDW DMN66D0LT DMN65D8LDW 2N7002DWA SOT23 SOT26 X1-DFN1006-3 Dual Yes 60 20 0.2 0.4 6000 8000 - 22 @ 25V 0.43 0.87 SOT363 2N7002W Single No 60 20 0.115 0.2 13500 7500 @ 5V - 22 @ 25V - - SOT323 2N7002 Single No 60 20 0.21 0.54 13500 7500 @ 5V - 22 @ 25V 223 - SOT23 Dual No 60 20 0.23 0.4 13500 7500 @ 5V - 22 @ 25V - - SOT363 2N7002DW 2N7002T 2N7002VAC 2N7002VC Single No 60 20 0.115 0.15 13500 7500 @ 5V - 22 @ 25V - - SOT523 Dual No 60 20 0.28 0.15 13500 7500 @ 5V - 50 max @ 25V - - SOT563 SOT563 Dual No 60 20 0.28 0.15 13500 7500 @ 5V - 50 max @ 25V - - ZXMN7A11G Single No 70 20 3.8 3.9 13 19 - 298 @ 40V 4.35 @ 5V 7.4 SOT223 ZXMN7A11K Single No 70 20 6.1 8.5 13 19 - 298 @ 40V 4.35 @ 5V 7.4 TO252 (DPAK) DMN7022LFG Single No 75 20 10.5 2 22 28 - 2737 @ 35V 26.4 56.5 POWERDI3333-8 DMT8012LFG Single No 80 20 9.5 2.2 16 22 @ 6V - 1949 15 34 POWERDI3333-8 DMT8012LK3 Single No 80 20 10.5 2.6 16 21 1949 15 34 TO252 (DPAK) 60V MOSFET BOOSTS POWER DENSITY THE DIODES ADVANTAGE The DMN6070SFCL is the world’s smallest 60V N-channel MOSFET with a sub-100mΩ on-resistance. Small footprint and low profile Packaged in a DFN1616 with a footprint measuring 1.6mm x 1.6mm and a typical off-board height of only 0.5mm. Low on-resistance With a typical RDS(ON) of 74mΩ at VGS of 4V to minimize conduction losses and raise overall power efficiency. Page 20 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 21 51V – 99V P-CHANNEL Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V CISS typ @ VGS = ½VDSS (pF) QG typ @ VGS = 4.5V (nC) QG typ @ VGS = 10V (nC) Package DMP6023LFG Single No a 60 20 7.7 2.1 a 25 a 33 a 2569 a 26.5 53.1 a POWERDI3333-8 DMP6023LSS Single No 60 20 6.6 1.6 25 33 - 2569 26.5 53.1 SO-8 DMP6023LE Single No 60 20 7.4 2 28 35 - 2569 26.5 53.1 SOT223 Dual No 60 20 4.8 1.7 55 70 - 1293 11.9 24 SO-8 ZXMP6A18K Single No 60 20 10.4 10.1 55 80 - 1580 23 @ -5V 44 TO252 (DPAK) ZXMP6A16K Single No 60 20 8.2 9.76 85 125 - 1021 12.1 @ -5V 24.2 TO252 (DPAK) DMP6110SSD Dual No 60 20 4.5 1.7 105 130 - 969 8.2 17.2 SO-8 DMP6110SSS Single No 60 20 4.5 1.5 110 130 - 1030 9.5 19.4 SO-8 DMP6180SK3 Single No 60 20 10 2.7 110 140 - 984.7 8.1 17.1 TO252 (DPAK) a DMP6050SSD ZXMP6A17DN8 a a a a a a a a Dual No 60 20 3.4 2.15 125 190 - 637 9 17.7 SO-8 ZXMP6A17E6 Single No 60 20 3 1.9 125 190 - 637 9.8 17.7 SOT26 ZXMP6A17G Single No 60 20 4.3 3.9 125 190 - 637 9 17.7 SOT223 DMP6185SK3 Single No 60 20 9.4 2.7 150 185 - 708 6.2 14 TO252 (DPAK) DMP6185SE Single No 60 20 3 2.2 150 185 - 708 6.2 14 SOT223 DMP6250SE Single No 60 20 2.1 1.8 250 300 - 551 4.8 9.7 SOT223 ZXMP6A13G Single No 60 20 2.3 3.9 390 595 - 219 2.9 5.9 SOT223 ZXMP6A13F Single No 60 20 1.1 0.806 400 600 - 219 2.9 5.9 SOT23 ZVP2106A Single No 60 20 0.28 0.7 5000 - - 100 - - E-Line ZVP2106G Single No 60 20 0.45 2 5000 - - 100 - - SOT223 ZVP3306A Single No 60 20 0.16 0.625 14000 - - 50 - - E-Line ZVP3306F Single No 60 20 0.09 0.33 14000 - - 50 - - SOT23 ZXMP7A17G Single No 70 20 3.7 3.9 160 250 - 635 9.6 18 SOT223 ZXMP7A17K Single No 70 20 5.7 9.25 160 250 - 635 9.6 18 TO252 (DPAK) MOSFET PORTFOLIO OPTIMIZED FOR VOIP THE DIODES ADVANTAGE High pulse current (IDM) With high IDM handling capabilities, the MOSFETs can drive the transformer to deliver the required RING and TIP currents. Avalanche rugged These MOSFETs have been designed to withstand the highpulse avalanche energy that will be induced by the transformer during switching transition. Low gate charge (QG) and input capacitance (CISS) This simplifies the SLIC design and reduces component count and cost. These MOSFETs are capable of being driven at low logic-level voltages. Did you know? Diodes Incorporated provides the designers of Voice over Internet Protocol (VoIP) communication equipment with a range of rugged MOSFETs that significantly reduces circuit complexity and cost. For example, DMN60xx series are designed to handle the highpulse current needed to generate tip and ring linefeeds and to withstand the avalanche energy induced during switching. This meets the stringent requirements of primary switch position in transformer based Subscriber Line Interface Circuits (SLIC) DC/DC converters. VDC DC-DC CONVERTER TIP VBAT SLIC CONTROLLER LINEFEED CIRUITRY VTR TWISTED PAIR TO PHONE RING Diodes Incorporated also offers PNP transistors suitable for this application, e.g. the FZT953, FZT955. Page 21 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 22 100V PLUS N-CHANNEL Part Number ESD V IDS (A) PD (W) V Configuration Diode DS GS (Y/N) (V) (±V) @T =25°C @T =25°C 10V A A RDS(ON) (mΩ max) at VGS= 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) Package DMN10H099SFG Single No 100 a 20 a 4.2 a 2.31 a 80 a 99 @ 6V a a 1127 a 12.2 25.2 a POWERDI3333-8 DMN10H099SK3 Single No 100 20 17 - 80 99 @ 6V - 1172 12.2 25.2 TO252 (DPAK) ZXMN10A09K Single No 100 20 7.7 10.1 85 100 @ 6V - 1313 17.2 @ 6V 26 TO252 (DPAK) DMN10H120SFG Single No 100 20 3.8 2.4 110 122 @ 6V - 549 5.2 10.6 POWERDI3333-8 DMN10H170SFG Single No 100 20 2.9 2 122 133 - 870.7 @ 25V 7 14.9 POWERDI3333-8 ZXMN10A25G Single No 100 20 4 3.9 125 150 @ 6V - 859 9.6 @ 5V 17 SOT223 ZXMN10A25K Single No 100 20 6.4 9.85 125 150 @ 6V - 859 9.6 @ 5V 17 TO252 (DPAK) DMN10H170SK3 Single No 100 20 12 42 140 160 - 1167 @ 25V 4.9 9.7 TO252 (DPAK) DMN10H220L Single No 100 16 1.6 1.3 220 250 - 401 @ 25V 4.1 8.3 SOT23 DMN10H220LE Single No 100 20 2.3 1.8 220 250 - 401 @ 25V 4.1 8.3 SOT223 ZXMN10B08E6 Single No 100 20 1.9 1.7 230 300 - 497 5 @ 5V 9.2 SOT26 Dual No 100 20 2.1 1.8 250 300 @ 6V - 405 4.2 @ 5V 7.7 SO-8 ZXMN10A08E6 Single No 100 20 1.9 1.7 250 300 @ 6V - 405 4.2 @ 5V 7.7 SOT26 ZXMN10A08G Single No 100 20 2.9 3.9 250 300 @ 6V - 405 4.2 @ 5V 7.7 SOT223 ZXMN10A11G Single No 100 20 2.4 3.9 350 450 @ 6V - 274 3.5 @ 5V 5.4 SOT223 ZXMN10A11K Single No 100 20 3.5 8.5 350 450 @ 6V - 274 3.5 @ 5V 5.4 TO252 (DPAK) ZVN4310A Single No 100 20 0.9 0.85 500 650 @ 6V - 350 max @ 25V - - E-Line ZVN4310G Single No 100 20 1.67 3 540 750 @ 6V - 350 max @ 25V - - SOT223 ZXMN10A07F Single No 100 20 0.8 0.625 700 900 @ 6V - 138 - 2.9 SOT23 ZXMN10A07Z Single No 100 20 1.4 2.6 700 900 @ 6V - 138 - 2.9 SOT89-3L ZVN4210A Single No 100 20 0.45 0.7 1500 1800 @ 5V - 100 max @ 25V - - E-Line ZVN4210G Single No 100 20 0.8 2 1500 1800 @ 5V - 100 max @ 25V - - SOT223 ZVNL110A Single No 100 20 0.32 0.7 3000 4500 @ 5V - 75 max @ 25V - - E-Line ZVNL110G Single No 100 20 0.6 2 3000 4500 @ 5V - 75 max @ 25V - 1.8 SOT223 ZVN2110A Single No 100 20 0.32 0.7 4000 - - 75 max @ 25V - - E-Line ZVN2110G Single No 100 20 0.5 2 4000 - - 59 @ 25V - - SOT223 BSS123 Single No 100 20 0.17 0.3 6000 10000 - 29 @ 25V - - SOT23 BSS123W Single No 100 20 0.17 0.2 6000 10000 - 29 @ 25V - - SOT323 ZVN3310A Single No 100 20 0.2 0.625 10000 - - 40 max @ 25V - - E-Line ZVN3310F Single No 100 20 0.1 0.33 10000 - - 40 max @ 25V - - SOT23 ZXMN15A27K Single No 150 25 2.6 9.5 650 - - 169 @ 25V - 6.6 TO252 (DPAK) ZXMN20B28K Single No 200 20 2.3 10.2 750 780 @ 5V - 358 @ 25V 8.1 @ 5V ZVN2120G Single No 200 20 0.32 2 10000 - - 85 max @ 25V - - SOT223 ZVN3320F Single No 200 20 0.06 0.33 25000 - - 45 max @ 25V - - SOT23 ZVNL120A Single No 200 20 0.18 0.7 - 10000 @ 5V 10000 @ 3V 85 max @ 25V - - E-Line ZVNL120G Single No 200 20 0.32 2 - 10000 @ 5V 10000 @ 3V 85 max @ 25V - - SOT223 BS107P Single No 200 20 0.12 0.5 - 30000 @ 5V 23000 @ 2.6V - - 2.7 E-Line ZVN4424A Single No 240 40 0.26 0.75 5500 - 6000 110 @ 25V - - E-Line ZVN4424G Single No 240 40 0.5 2.5 5500 - 6000 110 @ 25V - - SOT223 DMN24H11DS Single No 240 20 0.27 1.2 11000 12000 - 76.8 @ 25V - 3.7 SOT23 ZVN0124A Single No 240 20 0.16 0.7 16000 - - 85 max @ 25V - - E-Line ZVN4525E6 Single No 250 40 0.23 1.1 8500 9000 9500 72 @ 25V - 2.6 SOT26 ZVN4525G Single No 250 40 0.31 2 8500 9000 9500 72 @ 25V - 2.6 SOT223 ZVN4525Z Single No 250 40 0.24 1.2 8500 9000 9500 72 @ 25V - 2.6 SOT89-3L DMN30H4D0L Single No 300 20 0.25 0.47 4000 4000 - 187.3 @ 25V - 7.6 SOT23 DMN30H4D0LFDE Single No 300 20 0.55 1.98 4000 4000 - 187.3 @ 25V - 7.6 U-DFN2020-6 Type E DMN30H14DLY Single No 300 20 0.21 2.2 14000 20000 - 96 @ 25V - 4 SOT89 ZVN0540A Single No 400 20 0.09 0.7 50000 - - 70 max @ 25V - - E-Line Dual No 450 0.5 1.64 4000 - - 256 @ 25V - 6.9 SO-8 a ZXMN10A08DN8 DMGD7N45SSD Page 22 a a 30 a a a TO252 (DPAK) DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 23 100V PLUS N-CHANNEL (CONTINUED) Part Number RDS(ON) (mΩ max) at VGS= ESD V IDS (A) PD (W) V Configuration Diode DS GS (Y/N) (V) (±V) @T =25°C @T =25°C A A 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) ZVN0545A Single No 450 a 20 a 0.09 a 0.7 a 50000 a a a 70 max @ 25V ZVN0545G Single No 450 20 0.14 2 50000 - - 70 max @ 25V ZXMN0545G4 Single No 450 20 0.14 2 50000 - - 70 max @ 25V BSS127S Single No 600 20 0.07 1.25 160000 19000 @ 5V - BSS127SSN Single No 600 20 0.07 1.25 160000 19000 @ 5V DMG9N65CT Single No 650 30 9 165 1300 DMG9N65CTI Single No 650 30 9 13 1300 DMG4N65CT Single No 650 30 4 2.19 DMG4N65CTI Single No 650 30 4 8.53 DMJ7N70SK3 Single No 700 30 3.9 28 1250 a a a - a E-Line - - SOT223 - - SOT223 21.8 @ 25V - 1.08 SOT23 - 21.8 @ 25V - 1.08 SC59 - - 2310 @ 25V - 39 TO220AB - - 2310 @ 25V - 39 ITO-220AB 3000 - - 900 @ 25V - 13.5 TO220-3 3000 - - 900 @ 25V - 13.5 ITO-220AB - - 351 @ 50V - 14 TO252 (DPAK) a a - Package a a 100V PLUS P-CHANNEL Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (±V) IDS (A) RDS(ON) (mΩ max) at VGS= PD (W) @TA=25°C @TA=25°C 10V 4.5V 2.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (pF) (nC) (nC) Package ZXMP10A18G Single No 100 20 3.7 a 3.9 150 a 190 @ 6V a a 1055 a - 26.9 a a SOT223 ZXMP10A18K Single No 100 20 5.9 10.2 150 190 @ 6V - 1055 - 26.9 TO252 (DPAK) ZXMP10A16K Single No 100 20 4.6 9.76 235 285 @ 6V - 717 - 16.5 TO252 (DPAK) DMP10H400SK3 Single No 100 20 9 42 240 300 - 1239 @ 25V 8.4 17.5 TO252 (DPAK) ZXMP10A17E6 Single No 100 20 1.6 1.7 350 450 @ -6V - 424 7.1 @- 6V 10.7 SOT26 ZXMP10A17G Single No 100 20 2.4 3.9 350 450 @ -6V - 424 7.1 @- 6V 10.7 SOT223 ZXMP10A17K Single No 100 20 3.9 10.2 350 450 @ -6V - 424 7.1 @- 6V 10.7 TO252 (DPAK) ZXMP10A13F Single No 100 20 0.7 0.806 1000 1450 @ -6V - 141 1.8 @ 5V 3.5 SOT23 ZVP2110A Single No 100 20 0.23 0.7 8000 - - 100 max @ 25V - - E-Line ZVP2110G Single No 100 20 0.31 2 8000 - - 100 max @ 25V - - SOT223 ZVP3310A Single No 100 20 0.14 0.625 20000 - - 50 max @ 25V - - E-Line ZVP3310F Single No 100 20 0.075 0.33 20000 - - 50 max @ 25V - - SOT23 ZVP2120A Single No 200 20 0.12 0.7 25000 - - 100 max @ 25V - - E-Line ZVP2120G Single No 200 20 0.2 2 25000 - - 100 max @ 25V - - SOT223 ZXMP2120G4 Single No 200 20 0.2 2 25000 - - 100 max @ 25V - - SOT223 ZXMP2120E5 Single No 200 20 0.122 0.75 28000 - - 100 max @ 25V - - SOT25 ZXMP2120FF Single No 200 20 0.137 1 28000 - - 100 max @ 25V - - SOT23F ZVP1320F Single No 200 20 0.035 0.35 80000 - - 50 max @ 25V - - SOT23 ZVP4424A Single No 240 40 0.2 0.75 9000 - 11000 @ 3.5V 100 max @ 25V - - E-Line ZVP4424G Single No 240 40 0.48 2.5 9000 - 11000 @ 3.5V 100 max @ 25V - - SOT223 ZVP4424Z Single No 240 40 0.2 1.5 9000 - 11000 @ 3.5V 100 max @ 25V - - SOT89-3L ZVP4525E6 Single No 250 40 0.197 1.1 14000 - 18000 @ 3.5V 73 @ 25V - 2.45 SOT26 ZVP4525G Single No 250 40 0.265 2 14000 - 18000 @ 3.5V 73 @ 25V - 2.45 SOT223 ZVP4525Z Single No 250 40 0.205 1.2 14000 - 18000 @ 3.5V 73 @ 25V - 2.45 SOT89-3L ZVP0545A Single No 450 20 0.045 0.7 150000 - - 120 max @ 25V - - E-Line ZVP0545G Single No 450 20 0.075 2 150000 - - 120 max @ 25V - - SOT223 a a a a a a a a Page 23 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 24 PROTECTED MOSFETS (IntelliFET) Part Number Configuration TAB BVDSS (V) RDS(ON) (mΩ max) at VGS = ID (A) PD (W) VIN=5V @TA=+25°C 3V 5V 10V VDS(S/C) 5V EAS (mJ) Tj (ºC) Package ZXMS6006DG Single Drain 60 a 2.8 3 125 a 100 a a 36 a 490 a 150 a SOT223 ZXMS6006DT8 Dual N/A 60 - 2.1 125 100 - 36 210 150 SM-8 ZXMS6006SG Single Source 60 2.8 3 125 100 - 36 490 150 SOT223 ZXMS6005DG Single Drain 60 2 3 250 200 - 24 490 150 SOT223 ZXMS6005DT8 Dual N/A 60 1.8 2.13 250 200 - 24 210 150 SM-8 ZXMS6005SG Single Source 60 2 1.6 250 200 - 24 480 150 SOT223 ZXMS6004DG Single Drain 60 1.3 3 600 500 - 36 490 150 SOT223 ZXMS6004DT8 Dual N/A 60 1.2 2.13 600 500 - 36 210 150 SM-8 a a a a a a a ZXMS6004FF Single N/A 60 1.3 1.5 600 500 - 36 90 150 SOT23F ZXMS6004SG Single Source 60 1.3 1.6 600 500 - 36 480 150 SOT223 BSP75G Single Drain 60 1.4 2.5 - 675 550 36 550 150 SOT223 BSP75N Single Source 60 1.2 1.5 - 675 550 36 550 150 SOT223 ZXMS6001N3 Single Source 60 1.1 1.5 2000 675 - 36 550 150 SOT223 ZXMS6002G Single Drain 60 1.4 2.5 - 675 550 36 550 150 SOT223 ZXMS6003G Single Drain 60 1.4 2.5 - 675 550 36 550 150 SOT223 SOT23 FLAT PCB Footprint 7.5mm2 SOT223 PCB Footprint 49.5mm2 PROBABLY THE SMALLEST SELF-PROTECTED MOSFET THE DIODES ADVANTAGE IntelliFETs are low-side 60V N-channel MOSFETs with integrated self-protection features. Moving to the ZXMS6004FF reduces the board area by a factor of 6.5 yet maintains the functionalist and power dissipation Did you know? The IntelliFET® series of low-side 60V N-channel MOSFETs feature over-current, over-voltage, over-temperature and ESD protection that enables circuit designers to increase system reliability. The ZXM6004FF is probably the smallest self-protected MOSFET that is ideally suited for switching inductive loads, such as motors, relays and lamps at low frequencies. Packaged in the thermal efficient and compact SOT23 flat (SOT23F), this takes 85% less board space than 7.3mm x 6.7mm footprint SOT223 packaged parts. The small footprint of ZXMS6004FF opens new applications such as sensors where PCB constraints had previously prevented the use of self-protected MOSFETs. Self-protected MOSFETs IntelliFET portfolio feature over-current, over-voltage, overtemperature and ESD protection that increase system reliability. Logic-level input IntelliFETs can be driven directly from microcontrollers with logic level signals from 3.3V to 5V. ZXMS6004FF in SOT23F Providing power density three times that of equivalent SOT223 solutions, the ZXMS6004FF saves on board space having an equivalent footprint to standard SOT23. Dual IntelliFETs in SM8 Co-packaging two IntelliFETs as independent and isolated switches enables one dual SM8 to replace two SOT223 while delivering the same thermal performance and reducing PCB area. Automotive AEC-Q101 Fully meets AEC-Q101 standard for high reliability, making IntelliFETs well-suited for operation in harsh environments. IntelliFET is a registered trademark of Diodes Incorporated. Page 24 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 25 H-BRIDGE Part Number DMHC3025LSD a ESD V IDS (A) PD (W) VGS Configuration Type Diode DS (Y/N) (V) (±V) @T =+25°C @T =+25°C A A H-bridge 2*N a No ZXMHC3F381N8 H-bridge 2*N No 2*P ZXMHC3A01T8 H-bridge 2*N No 2*P ZXMHC3A01N8 H-bridge 2*N No 2*P DMHC4035LSD H-bridge 2*N No 2*P ZXMHC6A07N8 H-bridge 2*N No 2*P ZXMHC6A07T8 H-bridge 2*N No 2*P ZXMHN6A07T8 ZXMHC10A07N8 H-bridge H-bridge 4*N 2*N No No 2*P ZXMHC10A07T8 H-bridge 30 a 20 a 6 30 20 4.2 30 20 5 30 20 4.1 30 20 3.1 30 20 2.3 30 20 2.7 30 20 2.1 40 20 4.5 40 20 3.7 60 20 1.8 60 20 1.4 60 20 1.8 60 20 1.5 a a 2*P 2*N 2*P No 1.5 RDS(ON) Max(mΩ) at VGS= 10V 4.5V CISS typ @ QG typ @ QG typ @ VGS = ½VDSS VGS = 4.5V VGS = 10V (nC) (nC) (pF) 25 a 40 a 590 a 5.4 11.7 50 80 631 5.5 11.4 a a a 60 20 1.6 100 20 1 100 20 0.9 100 20 1.1 100 20 0.9 1.35 1.7 1.36 1.5 1.36 1.7 1.4 1.36 1.3 Package a SO-8 a 33 60 430 - 9 @ 15V 55 80 670 - 12.7 @ 15V 120 180 190 @ 25V - 3.9 210 330 204 @ 15V - 5.2 125 180 190 @ 25V - 3.9 210 330 204 @ 15V - 5.2 45 58 574 5.9 12.5 65 100 587 5.4 11.1 250 350 166 @ 40V - 3.2 400 600 141 @ 50V - 5.1 300 450 166 @ 40V 1.65 @ 5V 3.2 425 630 233 @ 30V 2.4 @ 5V 5.1 300 450 166 @ 40V - 3.2 700 900 @ 6V 138 @ 60V - 2.9 1000 1450 @ 6V 141 @ 50V - 3.5 700 900 @ 6V 138 @ 60V - 2.9 1000 1450 @ 6V 141 @ 50V - 3.5 SO-8 SM-8 SO-8 SO-8 SO-8 SM-8 SM-8 SO-8 SM-8 MOSFET H-BRIDGES REDUCE FOOTPRINT BY 50% THE DIODES ADVANTAGE Reduce footprint Using single SO-8 package, with 5mm x 6mm footprint, these H-bridges can save PCB space, reduce component count and assembly costs. Low RDS(ON) <50mΩ minimizes conduction losses enabling the H-bridges to tolerate high continuous current under motor stall conditions. Did you know? Packaging dual N-channel and dual P-channel MOSFETs in an SO-8 package, Diodes Incorporated has provided a unique solution that enables designers to reduce the PCB space and component count required by low power, full H-bridge applications. In just a single SO-8, with 5mm x 6mm footprint, these H-bridges can replace the equivalent four SOT23 or two SO-8 in space limited single-phase brush and brushless motor driving, inductive wireless charging circuits, CCFL inverters and driving solenoids in relays. The H-bridges’ space-saving advantage is complemented by the low RDS(ON) performance of the MOSFETs, typically 45mΩ at 10V VGS and 65mΩ at -10V VGS respectively for the 40V N-channel and P-channel devices. The minimal conduction losses resulting from the low on resistance mean the H-bridge is able to tolerate higher continuous current under motor stall conditions. High pulsed current 30A peak pulse capability allows for a high in-rush current to be drawn safely during the start-up of the inductive load. Max drain voltage 40V and 30V VDSS provides sufficient headroom for the intended 24V and 12V VCC rail voltages. Typical 12V full H-bridge driving a brushed DC motor Page 25 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 26 HIGH TEMPERATURE AUTOMOTIVE 'Q' MOSFETS RDS(ON) max (mΩ) QGT Typ Typ CISS (pf) @25VDSS EAR (mJ) IAR (A) Tj max Package Availability 69 a 3750 a 200 45 175 TO252 (DPAK) a a Q4 2015* 3.6 83 4450 120 30 175 TO252 (DPAK) Q4 2015* 2.7 - 60.1 3714 200 45 175 POWERDI5060-8 Q4 2015* 2–4 5 - 54 2492 260 70 175 TO252 (DPAK) Q4 2015* 2–4 5 - 54 2492 260 70 175 POWERDI5060-8 Q4 2015* 100 1–3 6.5 9.8 41 2090 64 20 175 POWERDI5060-8 Q4 2015* 50 1–3 7.5 11.5 41 2090 64 20 175 TO252 (DPAK) Q4 2015* - 2–4 8.6 - 41 2026 89 24 175 POWERDI5060-8 Q4 2015* 50 2–4 10 - 25.5 1374 170 18 175 TO252 (DPAK) Q4 2015* 20 2–4 10 - 25.5 1374 170 18 175 POWERDI5060-8 Q4 2015* 100 2–3 2.4 - TBC TBC TBC TBC 175 TO252 (DPAK) Q4 2015* 20 95 2–4 3.1 - 68.7 4221 200 45 175 POWERDI5060-8 Q4 2015* 20 100 2–4 3.4 - 70.3 4221 200 45 175 TO252 (DPAK) Q4 2015* 60 20 95 2–4 3.8 - 70.3 4221 200 45 175 TO252 (DPAK) Q4 2015* N 60 20 80 1–3 4.8 8.2 37 6300 68 90 175 TO252 (DPAK) Q4 2015* DMTH6005LPSQ N 60 20 80 1–3 4.8 8.2 37 6300 68 90 175 POWERDI5060-8 Q4 2015* DMNH6008SPSQ N 60 20 50 2–4 8 - 75.4 3290 300 26 175 POWERDI5060-8 Q4 2015* DMTH6010LK3Q N 60 20 50 1–3 8 12 41.3 2090 64 20 175 TO252 (DPAK) Q4 2015* DMTH6010SPSQ N 60 20 20 1–3 8 12 41.3 2090 64 20 175 POWERDI5060-8 Q4 2015* DMNH6012SPSQ N 60 20 20 2–4 11 - 48.5 2221 168 58 175 POWERDI5060-8 Q4 2015* DMNH6012LK3Q N 60 20 50 1–3 12 18 48.5 2221 168 58 175 TO252 (DPAK) Q4 2015* DMNH6021SPDQ N 60 20 40 1–3 23 28 19.7 1030 68 37 175 POWERDI5060-8 Q4 2015* DMNH6021SK3Q N 60 20 40 1–3 23 28 19.7 1030 68 37 175 TO252 (DPAK) Q4 2015* DMNH6022SSDQ N 60 20 16 1–3 23 28 19.7 1030 68 37 175 SO-8 Q4 2015* DMNH6042SPDQ N 60 20 7 1–3 50 65 15.6 700 106 5 175 POWERDI5060-8 Q4 2015* DMNH6042SSDQ N 60 20 18 1–3 50 65 15.6 700 106 5 175 SO-8 Q4 2015* DMNH6042SK3Q N 60 20 18 1–3 50 65 15.6 700 106 5 175 TO252 (DPAK) Q4 2015* DMNH10H014LPSQ N 100 20 TBC 2–4 14 24 50 3000 TBC TBC 175 POWERDI5060-8 Q4 2015* DMNH10H014LK3Q N 100 20 TBC 2–4 14 24 50 3000 TBC TBC 175 TO252 (DPAK) Q4 2015* DMNH10H028SPSQ N 100 20 50 1.2 – 2.2 26 32 20 1500 102 44 175 POWERDI5060-8 Q4 2015* DMNH10H028SK3Q N 100 20 50 1.2 – 2.2 26 32 20 1500 102 44 175 TO252 (DPAK) Q4 2015* DMPH3010LK3Q P -30 20 -17.5 -1 – 2.2 7.5 10 126 6234 292 -24 175 TO252 (DPAK) Q4 2015* DMPH4015LSSQ P -40 20 -20 -1 – 2.3 11 15 91 4234 58 -34 175 SO-8 Q4 2015* DMPH4013LSSQ P -40 20 -10 -1 – 2.4 13 18 - 3428 58 -34 175 SO-8 Q4 2015* DMPH4023LSSQ P -40 20 -50 -1 – 2.5 22 30 TBC TBC TBC TBC 175 SO-8 Q4 2015* DMPH6050SFGQ P -60 20 -17 -1 – 3 24 50 70 1293 31 -24 175 PowerDI3333-8 Q4 2015* DMPH6050SK3Q P -60 20 -17 -1 – 3 24 50 70 1293 31 -24 175 TO252 (DPAK) Q4 2015* Polarity VDS (V) VGSS (V) ID (A) VGSTH (V) DMTH4004SCTBQ N 40 a 20 a 100 2–4 a 3.4 a a DMTH4004LK3Q N 40 20 100 2–4 2.5 DMTH4004SPSQ N 40 20 100 2–4 DMNH4006LK3Q N 40 20 80 DMNH4006LPSQ N 40 20 80 DMTH4007LPSQ N 40 20 DMTH4007LK3Q N 40 20 DMTH4007SPD N+N 40 20 DMNH4011LK3Q N 40 20 DMNH4011LPSQ N 40 20 DMTH6003SCTBQ N 60 20 DMTH6004SPSQ N 60 DMTH6004SCTBQ N 60 DMTH6004SK3Q N DMTH6005LK3Q Part Number a a *Advance Information: For more details contact Diodes Sales Page 26 @VGS = 10 @10V @4.5V V (nc) a a a DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 27 MOSFET PACKAGE EVOLUTION Page 27 DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 2 CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE 4949 Hedgcoxe Road Suite 200 Plano, Texas 75024 972-987-3900 USA E-mail: inquiries@diodes.com SHANGHAI OFFICE Room 3001-3002, International Corporate City, No. 3000 Zhongshan North Road, Shanghai 200063, China Tel: 86 21-5241-4882 SHENZHEN OFFICE EUROPE SALES OFFICE Kustermann-Park Balanstrasse 59, 8th Floor D-81541 Munchen, Germany Tel: (+49) 89 45 49 49 0 E-mail: inquiries-europe@diodes.com 16th Floor Skyworth Semiconductor Design Building East Wing, No.8 Gaoxin South 4th Road, Nanshan District, Shenzhen, China P.C: 518057 Tel: 86 755-8828-4988 ASIA SALES OFFICES DIODES-KOREA Email: inquiries-asia@diodes.com 1601 ho, ParkView Tower Jeongja 1 dong, Bundang-gu Seongnam-si, Gyeonggi-do, Korea 463-811 Tel: 82-31-786-0434 DIODES-TAIWAN 7F, No. 50, Min-Chuan Road Hsin-Tien District New Taipei City 23141 Taiwan, R.O.C. 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