MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and Analog semiconductors. A focus on cost reduction, product innovation and customer service has resulted in Diodes Incorporated’s MOSFET portfolio substantially out performing the market. Clearly, DIODES INCORPORATED means MOSFET business. Its global footprint includes sales offices in 5 countries and manufacturing locations in China, Europe and the USA. A focus on product innovation, cost reduction, acquisitions and customer service has made Diodes Incorporated an industry leader. Combining leading silicon and packaging technologies, Diodes provides a broad portfolio of discrete semiconductors comprising Bipolar Transistors, MOSFETs, Schottky diodes, SBR®, switching diodes and functional specific arrays to enable our customers’ next generation designs. The Diodes' Analog IC portfolio consists of 6 main areas: Power Management ICs, Standard Linear and Logic, Lighting, Sensors, Direct Broadcast by Satellite and Applications Specific Standard Products. Embracing both industry standard and differentiated products such as the DMN2300UFB4 - probably the smallest, most powerful packaged MOSFET - , the Diodes MOSFET portfolio encompasses N channel, P channel, and complementary devices with breakdown voltages from -450V to 450V. These are packaged in single, dual, complementary, and H-bridge configurations in a wide range of package options, from the tiniest DFN1006 package, to large surface mount packages such as DPak (TO252-3L). The breadth of the Diodes Incorporated MOSFET portfolio enables designers to select a device optimised for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of: • • • • • • • • DC-DC conversion Load switching Motor control Backlighting Battery protection Battery chargers Audio circuits Automotive applications The majority of products in the Diodes MOSFET product portfolio are designed to meet the stringent requirements of AECQ101 reliability standard of the Automotive Electronic Council. Products with a ‘Q’ suffix indicate that the product is Automotive grade – the device has passed the rigorous AECQ101 standard and is fully supported for Automotive customers with PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites. Furthermore, all in house packaging utilises environmentally ‘green‘ mold compound. Diodes Incorporated’s MOSFET product development strategy is focused on high growth market segments such as LED Lighting; Notebook PC’s, Netbooks and Voice Over Internet applications (VoIP). INDEX 20V N-channel 4-5 20V P-channel 6 20V Complementary 7 MOSFET plus SBR 7 DIOFET™ 8 30V N-channel 9-10 30V P-channel 10 30V Complementary 11 31V - 99V N-channel 12-13 MOSFET plus BJT 13 31V - 99V P-channel 14 31V - 100V Complementary 15 100V plus N-channel 16 100V plus P-channel 17 Protected MOSFETs (IntelliFET™) 18 H-bridge 19 SBR is a registered trademark of Diodes Incorporated. DIOFET and IntelliFET are trademarks of Diodes Incorporated Page 3 20V N-channel Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ±12 ID (A) PD (W) @TA=25°C @TA=25°C 2.5V 1.8V 9 12 - Ciss typ. (pF) @ VDS=10V Qg typ. (nC) @ VGS=4.5V Package 2555 58.3 a SO-8 Single a N a 20 DMN2016UTS Dual Y 20 ±8 7 0.88 14 16 TBD 1495 16.5 TSSOP-8 DMG5802LFX Dual Y 24 ±12 6.5 0.98 15 20 - 1066.4 14.5 DFN5020-6 DMG6898LSD Dual - 20 ±12 9.5 1.28 16 - 24 1149 11.6 SO-8 DMN2016LFG Dual N 20 ±12 6 0.99 17 24 39 TBD TBD DFN3030-8 DMN2020LSN Single Y 20 ±12 6.9 0.6 20 28 - 1149 11.6 SC59 DMN2027USS Single N 20 ±12 5.6 0.9 20 28 - 1149 11.6 SO-8 DMN2028USS Single Y 20 ±12 9.8 2.8 20 28 - 1000 11.6 SO-8 DMG8601UFG Dual Y 20 ±8 6.1 0.92 23 27 34 143 8.8 DFN3030-8 DMG6968UTS Dual Y 20 ±8 5.2 1 23 27 34 143 8.8 TSSOP-8 DMG6968LSD Dual Y 20 ±12 9.4 0.85 24 28 34 142 8.8 SO-8 DMG6968UDM Dual Y 20 ±8 6.5 0.85 24 28 34 142 8.8 SOT23-6 7 a a a 2 4.5V DMN2009LSS a 12 RDS(ON) (mΩ max) at VGS= a a a a a a a Dual N 20 ±8 8.2 1.3 24 29 37 867 8.8 SO-8 DMG6968U Single Y 20 ±8 6.5 0.81 25 29 36 151 8.5 SOT23 DMG3414U DMG9926USD Single N 20 ±8 4.2 0.78 25 29 37 830 9.6 SOT23 DMG8822UTS Dual N 20 ±8 4.9 0.87 25 29 37 841 9.6 TSSOP-8 DMN2040LTS Dual N 20 ±12 6.7 0.89 26 36 - 570 5.2 TSSOP-8 DMG9926UDM Dual N 20 ±8 4.2 0.98 28 32 40 856 8.3 SOT23-6 Single N 20 ±12 6.4 0.78 28 41 - 550 7.2 SOT23 Dual N 20 ±12 3 1.4 28 41 - 550 7.3 SO-8 DMN2050L Single N 20 ±12 5.9 1.4 29 50 - 532 6.7 SOT23 DMG3420U Single Y 20 ±12 2.8 0.6 35 48 91 434 5.4 SOT23 DMN2075U Single N 20 ±8 4.2 0.8 38 45 - 594 7 SOT23 DMN2075UDM Single N 20 ±8 2.8 0.9 38 45 - 594 7 SOT23-6 DMN2075UTS Single N 20 ±8 2.8 0.87 38 45 - 594 7 TSSOP-8 DMN2075UW Single N 20 ±8 2.8 0.29 38 45 - 594 7 SOT323 ZXM64N02X Single N 20 ±12 5.4 1.1 40 50 - 1100 16 MSOP8 ZXMN2B03E6 Single N 20 ±8 5.4 1.1 40 55 75 1160 14.5 SOT23-6 ZXMN2F30FH Single N 20 ±12 4.9 1.4 45 65 - 452 4.8 SOT23 DMN2100UDM Single Y 20 ±8 3.3 0.9 55 70 90 555 - SOT23-6 ZXMN2B14FH Single N 20 ±8 4.3 1 55 75 100 872 11 SOT23 ZXMN2A03E6 Single N 20 ±12 4.6 1.7 55 100 - 837 8.2 SOT23-6 ZXMN2A14F Single N 20 ±12 4.1 1 60 110 - 544 6.6 SOT23 ZXMN2F34MA Single N 20 ±12 5.1 22 60 120 - 277 2.8 DFN322 ZXMN2F34FHTA Single N 20 ±13 - - 60 120 - 277 2.8 SOT23 DMG2302U Single N 20 ±8 2.8 0.8 90 120 - 594 7 SOT23 ZXM62N02E6 Single N 20 ±12 3.2 1.1 100 125 - 460 6.3 SOT23-6 SOT23-6 DMN2041L DMN2041LSD 7 DMN2215UDM Dual N 20 ±12 2 0.65 100 140 215 188 - DMN2112SN Single Y 20 ±8 1.2 0.5 100 140 [email protected] 220 - SC59 ZXMN2B01F Single N 20 ±8 2.4 0.625 100 150 200 370 4.8 SOT23 DMN2114SN Single Y 20 ±12 1.2 0.5 100 160 - 180 - SC59 DMN2230U Single N 20 ±12 2 0.6 110 145 230 188 - SOT23 ZXMN2A01E6 Single N 20 ±12 3.1 1.7 120 225 - 303 3 SOT23-6 ZXMN2A01F Single N 20 ±12 2.2 0.806 120 225 - 303 3 SOT23 ZXMN2AMC Dual N 20 ±12 3.7 2.45 120 300 - 299 3.1 DFN3020-8 ZXMD63N02X Dual N 20 ±12 2.4 1.25 130 150 - 350 6 MSOP8 DMN2300UFB Single Y 20 ±8 1.3 0.47 175 240 360 67.6 0.89 DFN1006H4-3 DMN2300UFB4 Single Y 20 ±8 1.3 0.47 175 240 360 67.6 0.89 DFN1006H4-3 DMN2300UFD Single Y 20 ±8 1.7 0.8 175 240 360 67.6 0.89 DFN1212-3 DMN2300U Single Y 20 ±8 1.4 0.62 175 240 360 67.6 0.89 SOT23 ZXM61N02F Single N 20 ±12 1.7 0.625 180 240 - 160 - SOT23 ZXMN2088E6 Dual N 20 ±12 2.1 1.1 200 240 310 279 3.8 SOT23-6 Single Y 20 ±6 0.63 0.28 400 500 700 61 736.6 SOT523 DMG1012T Page 4 THE DIODES ADVANTAGE Probably the smallest most powerful MOSFET in the world…. Did you know? Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm2 of PCB area and with an off-board profile of 0.4mm, these MOSFETs are designed to solve space constrained circuit layouts and are ideal for use in tablet PCs, smart phones, MP3 players, bluetooth headsets, hearing aids and thin profile LED TVs. The DFN1006-3 package takes less than half the board space of the equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256ºC/W, supports up to 1.3A under continuous conditions, providing a cooler running solution than SOT723, SOT523 and SOT323 alternatives. The portfolio comprises both N-channel and P-channel devices with breakdown voltage (VDS) rated at 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching or boost conversion circuit functions. The 20V rated DMN2300UFB4 features typical RDS(ON) performance of just 150mΩ, making it probably the smallest most powerful packaged MOSFET available. Product benefits Small footprint The DFN1006-3 package occupies just 0.6mm2 of PCB area, approximately half that of SOT723 alternatives. Low profile The DFN1006-3 has an off board height of 0.4mm (UFB4) or 0.5mm (UFB) making it ideal for thin profile consumer electronic products. Thermally efficient package Low junction to ambient thermal resistance (Rthj-a) enables DFN1006-3 to support up to 1.3A under continuous conditions. Low RDS(ON) The DMN2300UFB4 & DMP21D0UFB4 feature class leading low RDS(ON) at 4.5V VGS of 175mΩ and 495mΩ respectively. 20V N-channel (continued) Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V Ciss typ. (pF) @ VDS=10V Qg typ. (nC) @ VGS=4.5V Package DMG1012UW Single a Y a 20 ±6 a 1 a a 450 a 600 750 61 a 0.74 a a SOT323 DMG1012T Single Y 20 ±6 0.6 - 450 600 750 61 0.74 SOT523 DMN2400UV Dual Y 20 ±12 1.33 0.53 500 700 TBD 36 0.5 SOT563 DMN2004DMK Dual Y 20 ±8 0.54 0.225 550 700 900 150 - SOT26 DMN2004DWK Dual Y 20 ±8 0.54 0.2 550 700 900 150 - SOT363 DMN2004K Single Y 20 ±8 0.54 0.35 550 700 900 150 - SOT23 DMN2004TK Single Y 20 ±8 0.54 - 550 700 900 150 (max) - SOT523 a 7 a a a a DMN2004VK Dual Y 20 ±8 0.54 - 550 700 900 150 (max) - SOT563 DMN2004WK Single Y 20 ±8 0.54 0.2 550 700 900 150 - SOT323 DMN2400UFB4 Single Y 20 ±12 0.75 0.47 550 750 - 36 - DFN1006H4-3 DMN2400UFB Single Y 20 ±12 0.75 0.47 550 750 900 36 0.5 DFN1006-3 DMN2990UDJ Single Y 20 ±8 0.45 0.35 990 1200 1800 27.6 0.5 SOT963 DMN2005K Single Y 20 ±10 0.3 0.35 1500 1700 3500 39 - SOT23 Dual Y 20 ±10 0.2 0.35 1500 1700 3500 39 - DFN1310H4-6 DMN2005LP4K Single Y 20 ±10 0.2 0.2 1500 1700 3500 39 - DFN1006H4-3 DMN26D0UDJ Dual - 20 ±10 0.23 0.3 3000 4000 6000 14.1 - SOT963 DMN26D0UFB4 Single - 20 ±10 0.23 0.35 3000 4000 6000 14.1 - DFN1006H4-3 DMN26D0UT Single Y 20 ±10 0.23 0.3 3000 4000 6000 14.1 - SOT523 DMN2005LPK Single Y 20 ±10 0.44 0.45 1500 1700 3500 39 - DFN1006-3 DMN2005DLP4K Page 5 20V P-channel Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (V) -20 a ±12 ID (A) @TA=25°C @TA=25°C 4.5V 2.5V 1.8V 13 16 22 - Ciss typ. (pF) @ VGS=-10V Qg typ. (nC) @ VGS=4.5V 2444 56.9 Package Single a N ZXM66P02N8 Single N -20 ±12 -8 1.56 - 25 45 - 2068 43.3 SO-8 DMP2035U Single Y -20 ±8 -4 0.85 - 35 45 62 1610 15.4 SOT23 TSSOP-8 a a a 2.5 10V DMP2022LSS a -10 RDS(ON) (mΩ max) at VGS= PD (W) a a a a a a a a SO-8 a Dual N -20 ±8 6.04 0.89 - 35 45 62 1610 15.4 DMG2301U Single N -20 ±8 -2.4 0.8 - 39 52 65 608 - SOT23 DMG3415U Single Y -20 ±8 -4 0.9 - 39 52 65 294 9.1 SOT23 DMG3415UFY4 Single Y -16 ±8 -2.5 - - 39 52 65 281 10 DFN2015H4-3 DMP2066LDM Single N -20 ±12 -4.6 1.25 - 40 66 - 820 10.1 SOT23-6 DMP2066LSD Dual N -20 ±12 -5.8 2 - 40 66 - 820 10.1 SO-8 DMP2066LSN Single N -20 ±12 -4.6 1.25 - 40 70 - 820 10.1 SC59 DMP2066LSS Single N -20 ±12 -6.5 2.5 - 40 70 - 820 10.1 SO-8 DMP2069UFY4 Single Y -20 ±8 -2.5 0.53 - 54 69 90 214 9.1 DFN2015-3 DMP2305U Single N -20 ±8 -4.2 1.4 - 60 90 113 727 7.6 SOT23 Dual N -20 ±12 -3.8 1.4 - 70 85 - 632 - DFN2020B-6 DMP2035UTS DMP2160UFDB DMP2123L Single N -20 ±12 -3 1.4 - 72 123 - 443 7.3 SOT23 Dual N -20 ±12 -4.6 1.15 - 75 110 - 608.4 6.5 SO-8 DMP2160U Single N -20 ±12 -3.2 1.4 - 80 100 140 627 - SOT23 DMP2130L Single N -20 ±12 -3 1.4 - 80 110 - 240 7.3 SOT23 DMP2130LDM Single N -20 ±12 -3.4 1.25 - 80 130 - 240 7.3 SOT23-6 ZXM64P02X Single N -20 ±12 -3.5 1.1 - 90 130 - 900 6.9 MSOP8 DMP2160UW Single N -20 ±12 -1.5 0.35 - 100 120 160 627 - SOT323 DMP2215L Single N -20 ±12 -2.7 1.08 - 100 215 - 250 4.3 SOT23 DMP2225L Single N -20 ±12 -2.6 1.08 - 110 225 - 250 4.3 SOT23 DMG2301U Single N -20 ±8 -2.4 0.8 - 130 190 - 608 - SOT23 DMP2104LP Single N -20 ±12 -1.5 0.5 - 150 200 240 320 - DFN1411-3 DMP2104V Single N -20 ±12 -0.95 0.2 - 150 200 240 320 - SOT563 Dual N -20 ±12 -2 0.6 - 150 200 240 320 - SOT23-6 ZXM62P02E6 Single N -20 ±12 -2.3 1.1 - 200 275 - 320 5.8 SOT23-6 DMP2240UW Single N -20 ±8 -1.5 0.25 - 200 240 300 - - SOT323 ZXM62P03E6 Single N -20 ±12 -1.5 0.625 - 150 200 - 330 10.2 SOT23-6 ZXMD63P02X Dual N -20 ±12 -1.7 1.25 - 270 400 - 290 5.25 MSOP8 DMP2012SN Single Y -20 ±12 -0.7 0.5 - 400 500 - 180 - SC59 DMP21D0UFB Single Y -20 ±8 -0.77 0.43 - 495 690 900 80 0.91 DFN1006-3 DMP21D0UFB4 Single Y -20 ±8 -0.77 0.43 - 495 690 900 80 0.91 DFN1006H4-3 DMP21D0UFDB Single Y -20 ±8 -0.86 - - 495 690 900 80 0.91 DFN1212-3 DMP21D0UT Single Y -20 ±8 -0.6 0.24 - 495 690 960 80 0.91 SOT523 ZXM61P02F Single N -20 ±12 -0.9 0.625 - 600 900 - 150 3.5 SOT23 DMG1013UW Single Y -20 ±6 -0.82 0.3 - 750 1050 1500 60 0.62 SOT323 DMG1013T DMG9933USD DMP2240UDM Single Y -20 ±6 -0.46 0.27 - 750 1050 1500 60 0.62 SOT523 DMG1023UV Dual Y -20 ±6 -1.03 0.53 - 750 1050 1500 59.76 0.622 SOT563 DMP2004DMK Dual Y -20 ±8 -0.55 0.5 - 900 1400 2000 175 - SOT26 DMP2004DWK Dual Y -20 ±8 -0.43 0.25 - 900 1400 2000 175 - SOT363 DMP2004K Single Y -20 ±8 -0.6 0.55 - 900 1400 2000 175 (max) - SOT23 DMP2004WK Single Y -20 ±8 -0.4 0.25 - 900 1400 2000 175 (max) - SOT323 DMP2004VK Dual Y -20 ±8 -0.53 0.25 - 900 1400 2000 175 (max) - SOT563 DMP2004TK Single Y -20 ±8 -0.43 0.15 - 1100 1600 2400 175 - SOT523 DMP22D6UT Single Y -20 ±8 -0.43 0.15 - 1100 1600 2600 175 (max) - SOT523 DMP21D5UFB4 Single Y -20 ±8 -0.38 0.35 - 1500 2500 3500 53.7 - DFN1006H4-3 DMP210DUDJ Dual N -20 ±8 0.14 0.33 - 5000 7000 10000 13.72 - SOT963 DMP210DUFB4 Single N -20 ±8 -0.2 0.35 - 5500 7500 11500 13.72 - DFN1006H4-3 Page 6 20V Complementary Part Number DMC2020USD ESD Configuration Type Diode (Y/N) Complementary a VDS (V) ID (A) VGS (V) @TA=25°C @TA=25°C N a Y 20 ±12 a 7.4 P Y -20 ±12 -5.9 N Y 20 ±12 4.5 P Y -20 ±12 -3.2 N Y 20 ±6 1.3 P Y -20 ±6 -1.1 N Y 20 ±6 0.87 P Y -20 ±6 -0.64 N Y 20 ±6 1.066 P Y -20 ±6 -0.87 N Y 20 ±8 0.67 P Y -20 ±8 -0.53 N Y 20 ±8 0.54 P Y 20 ±8 -0.39 N Y 20 ±8 0.75 P Y -20 ±8 -0.6 a a a Complementary DMC2700UDM DMG1016V Complementary Complementary DMG1016UDW DMC2004VK Complementary Complementary DMC2004DWK DMC2004LPK Complementary Complementary RDS(ON) (mΩ max) at VGS= Ciss typ. (pF) @ VDS=-10V Qg typ. (nC) @ VGS=4.5V 4.5V 2.5V 1.8V 20 28 a a 1149 a 11.6 33 45 - 1610 15.4 a 1.25 a DMC2038LVT PD (W) a a 1.12 1.12 0.53 0.33 0.4 0.25 0.5 Package a SO-8 a 35 43 56 400 12 74 110 168 530 10 400 500 700 61 0.74 700 900 1300 61 0.62 400 500 700 61 0.74 700 900 1300 61 0.62 450 600 750 61 0.74 750 1050 1500 60 0.62 550 700 900 150 - 900 1400 2000 175 - 550 700 900 150 - 900 1400 2000 175 - TSOT23-6 SOT23-6 SOT563 SOT363 SOT563 SOT563 550 700 900 150 (max) 0.175 900 1400 2000 175 (max) 0.15 DFN1612-6 D1 MOSFET plus SBR Part Number Configuration ESD Type Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 4.5V 2.5V 1.8V Ciss typ. (pF) Qg typ. (nC) @ VDS=-10V @ VGS=4.5V Package DMS2220LFDB MOSFET plus SBR a P a Y a -20 a ±12 -2.9 1.4 a 95 120 a 150 a 627 a a DFN2020 DMS2120LFWB MOSFET plus SBR P Y -20 ±12 -3.5 1.5 95 120 150 627 - DFN3020 DMS2220LFW MOSFET plus SBR P Y -20 ±12 -2.9 1.5 95 120 130 281 632 DFN3020 a a a a a a THE DIODES ADVANTAGE MOSFET plus SBR Did you know? Diodes Incorporated’s proprietary Super Barrier Rectifier (SBR) technology delivers significantly lower forward voltage (VF) and stability at higher temperature than conventional Schottky diodes. The DMS2220UFDB co-packages SBR and a P-channel enhancement MOSFET in a small leadless package to deliver a small form factor charging solution. Product benefits Saves Space With a footprint of just 2mm2 , the DMS2220UFB occupies 55% less board space than larger 3mm2 packaged solutions. Enables thinner applications The DFN2020 has an off board height of 0.5mm enabling the design of lower profile end applications. Reduce component count Combines two discrete devices in one small form factor package reducing PCB footprint. Page 7 Part Number Configuration /Polarity ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V Ciss typ. (pF) Qg typ. (pF) @ VDS=15V @ VGS=10V Package DMS3014SSS N + Schottky N a 30 a ±12 a 10.4 a 1.55 a 13 a 14 a 2296 45.7 a a SO-8 DMS3015SSS N + Schottky N 30 ±20 11 1.55 11.9 14.9 - 30.6 SO-8 DMS3016SSS N + Schottky N 30 ±12 9.8 1.54 13 16 1849 43 SO-8 DMS3017SSD Dual N-Channel + Schottky N 30 ±20 10 12 15 1276 30.6 N 30 ±20 7.2 22 32 478.9 10.5 a THE DIODES ADVANTAGE DMS3019SSD a Dual N-Channel + Schottky N 30 ±12 9 N 30 ±20 7 1.79 1.79 a 15 18 1932 42 23 33 478.9 10.5 a SO-8 SO-8 DIOFET Did you know? Diodes Incorporated has designed and patented a proprietary process that integrates a power MOSFET and anti-parallel schottky diode into a single die. Targeted at the low side synchronous MOSFET position of synchronous pointof-load (PoL) converters, the lower VSD and Qrr of the DIOFET family reduce conduction and switching losses improving the overall efficiency of the PoL converter lowering its operating temperature. Product benefits Low RDS(ON) The low RDS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs. Low VSD of the integrated Schottky The monolithically integrated Schottky has a forward voltage (VSD) that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. Integrated schottky has low Qrr The low Qrr of the integrated schottky reduces body diode switching losses. Low Qgd/Qgs ratio A lower gate capacitance ratio than competing solutions reduces the risk of shootthrough or cross conduction currents at high frequencies. Avalanche rugged These MOSFETS have been designed to withstand the high pulse avalanche energy from that will be induced by the output inductor during switching. Page 8 30V N-channel Part Number ESD V Configuration Diode DS (Y/N) (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V 1.8V Ciss typ. (pF) Qg typ. (nC) Qg typ. (nC) @ VDS=15V @ VGS=4.5V @ VGS=10V Package DMN3005LK3 Single N a 30 a ±20 a 22 a 1.68 a 5 6.5 a a a 4342 a 46.9 - a TO252-3L DMN3007LSS Single N 30 ±20 16 2.5 7 10 - - 2714 - 64.2 SO-8 DMG8880LK3 Single N 30 ±20 58 TBA 9 12 - - 1260 - 13 TO252-3L DMG8880LSS Single N 30 ±20 58 TBA 9 12 - - 1260 - 13 SO-8 DMN3010LSS Single N 30 ±20 16 2.5 9 13 - - 2096 - 13 SO-8 DMN4468LSS Single N 30 ±20 8.7 1.52 14 20 - - 867 - 18.85 SO-8 DMG4468LFG Single N 30 ±20 8.7 1.52 14 20 - - 867 - 18.85 DFN3030-8 DMG4468LK3 Single N 30 ±20 8.7 1.52 14 20 - - 867 - 18.85 TO252-3L DMN4800LSS Single N 30 ±25 9 1.46 16 20 - - 798 8.7 - SO-8 DMN4800LSSL Single N 30 ±20 8 1.46 14 20 - - 798 - 8.7 SO-8 a a a a a a DMG4800LSD Dual N 30 ±25 8.5 1.17 16 20 - - 798 8.7 - SO-8 DMG4800LK3 Single N 30 ±25 10 1.7 16 22 - - 798 8.7 - TO252-3L DMG4800LFG Single N 30 ±20 10 0.94 17 24 - - 798 8.7 - DFN3030-8 DMN3030LSS Single N 30 ±25 9 2.5 18 30 741 8.6 16.7 SO-8 DMN3031LSS Single N 30 ±20 9 2.5 18.5 31 - - 741 7.6 16.7 SO-8 DMG7410SFG Single N 30 ±20 22 2 20 26 - - 569 5.3 11.3 PowerDI3333-8 Dual N 30 ±20 8.5 2.8 20 30 - - 1890 - 36.8 SO-8 DMN3020LK3 Single N 30 ±20 16.7 8.9 20 34 - - 608 6.3 12.9 TO252-3L ZXMN3A04K Single N 30 ±20 18.4 10.1 20 34 - - 1890 - 36.8 TO252-3L DMG4496SSS Single N 30 ±25 10 1.42 21.5 29 - - 493.5 4.7 10.2 SO-8 DMN3033LSD Dual N 30 ±20 6.9 2 22 33 - - 725 - 13 SO-8 DMG4466SSS Single N 30 ±25 10 1.42 23 33 - - 478.9 5 10.5 SO-8 DMG4466SSSL Single N 30 ±20 10 1.42 23 33 - - 478.9 5 10.5 SO-8 DMN3024LSS Single N 30 ±20 8.5 2.8 24 36 - - 608 6.3 12.9 SO-8 DMN3024LSD Dual N 30 ±20 7.2 2 24 36 - - 608 6.3 12.9 SO-8 DMN3024LK3 Single N 30 ±20 14.4 8.9 24 39 - - 608 6.3 12.9 TO252-3L ZXMN3F318DN8 Dual N 30 ±20 7.3 2.1 24 39 - - 608 6.3 12.9 SO-8 ZXMN3F31DN8 Dual N 30 ±20 7.3 2.1 24 39 - - 608 6.3 12.9 SO-8 DMG6402LDM Single N 30 ±20 5.9 1.1 28 42 - - 386 - 9.2 SOT23-6 DMN3404L Single N 30 ±20 4.3 0.78 28 42 - - 386 - 9.2 SOT23 Dual N 30 ±20 7.1 2.1 28 45 - - 472 - 10.5 SO-8 DMN3052LSS Single N 30 ±12 7.1 2.5 30 40 63 - 555 - - SO-8 DMN3033LSN Single N 30 ±20 6 1.4 30 40 - - 755 - 10.5 SC59 DMN3052L Single N 30 ±12 5.4 1.4 32 42 64 - - - - SOT23 DMN3033LDM Single N 30 ±20 6.9 2 33 40 - - 755 - 10.5 SOT26 ZXMN3A04DN8 ZXMN3G32DN8 ZXMN3A06DN8 Dual N 30 ±20 6.2 2.1 35 50 - - 796 - 17.5 SO-8 DMN3051LDM Single N 30 ±20 4 0.9 38 64 - - 424 - - SOT23-6 ZXMN3F30FH Single N 30 ±20 4.6 1.4 47 65 - - 318 - 7.7 SOT23 ZXMN3A03E6 Single N 30 ±20 4.6 1.7 50 65 - - 600 - 12.6 SOT23-6 DMN3112SSS Single N 30 ±20 6 2.5 57 112 - - 268 - - SO-8 DMN3112S Single N 30 ±20 5.8 1.4 57 112 - - 268 - - SOT23 ZXMN3A14F Single N 30 ±20 3.9 1.5 65 95 - - 448 - 8.6 SOT23 ZXM62N03G Single N 30 ±20 4.7 2 110 150 - - 380 - 9.6 SOT223 ZXMN3A01E6 Single N 30 ±20 3 1.7 120 180 - - 190 - 3.9 SOT23-6 ZXMN3A01F Single N 30 ±20 2 0.625 120 180 - - 190 - 3.9 SOT23 ZXMN3AMC Dual N 30 ±20 3.7 2.45 120 180 - - 190 2.3 3.9 DFN3020-8 MSOP8 ZXMD63N03X Dual N 30 ±20 2.3 1.25 135 200 - - 290 - 8 DMN100 Single Y 30 ±20 1.1 0.5 170 240 - - 150 - 5.5 SC59 ZXM61N03F Single N 30 ±20 1.4 0.625 220 300 - - 150 - 4.1 SOT23 ZXMN3B04N8 Single N 30 ±12 8.9 3 - 25 40 - 2480 23.1 - SO-8 DMN3029LFX Single Y 30 ±12 7.2 TBD - 26 34 - TBD - TBD DFN5020-6 DMN3115UDM Single Y 30 ±8 3.2 0.9 - 60 80 130 476 - - SOT23-6 ZXMN3B14F Single N 30 ±12 3.5 1.5 - 80 140 - 568 6.7 - SOT23 Page 9 30V N-channel (continued) Part Number ESD V Configuration Diode DS (Y/N) (V) ID (A) VGS (V) PD (W) RDS(ON) (mΩ max) at VGS= @TA=25°C @TA=25°C 10V 4.5V 2.5V 1.8V Ciss typ. (pF) Qg typ. (nC) Qg typ. (nC) @ VDS=15V @ VGS=4.5V @ VGS=10V Package DMN3150L Single N a 30 a ±12 a 3.2 a 1.25 a - 85 a 115 a a 305 a a a - a SOT23 DMN3150LW Single N 30 ±12 1.6 0.35 - 88 138 - 305 - - SOT323 DMN3200U Single N 30 ±8 2.2 0.65 - 90 110 200 290 - - SOT23 DMN3300U Single N 30 ±12 2 0.6 - 150 200 250 193 - - SOT23 ZXMN3B01F Single N 30 ±12 2 0.806 - 150 240 - 258 2.93 - SOT23 DMN2600UFB Single Y 25 ±8 1.3 0.54 - 350 450 600 70.13 - - DFN1006-3 DMN3730UFB Single Y 30 ±8 0.9 0.69 - 460 560 730 65 1.6 - DFN1006-3 DMN3730UFB4 Single Y 30 ±8 0.9 0.69 - 460 560 730 65 1.6 - DFN1006H4-3 DMN3730U a a a a Single Y 30 ±8 0.9 0.69 - 460 560 730 65 1.6 - SOT23 DMN32D2LDF Dual Y 30 ±10 0.4 0.28 - 1200 (@4V) 1500 2200 39 - - SOT353 DMN32D2LFB4 DFN1006H4-3 Single Y 30 ±10 0.3 0.35 - 1200 (@4V) 1500 2200 39 - - DMN32D2LV Dual Y 30 ±10 0.4 0.2 - 1200 (@4V) 1500 2200 39 - - SOT563 DMN313DLT Single Y 30 ±20 270 0.36 - 5000 10000 - 34.3 0.5 - SOT523 30V P-channel Part Number ESD Configuration Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ.(pF) Qg typ.(nC) Qg typ.(nC) @ VDS=-15V @ VGS=4.5V @ VGS=10V Package DMP3010LPS Single a N a -30 a ±20 a -36 a 2.18 a 7.5 10 a a 6324 a 59.2 a 126.2 a a POWERDI5060 DMG4413LSS Single N -30 ±20 -10.5 2.5 7.5 10.2 - 4965 46 - SO-8 DMP3015LSS Single N -30 ±20 -13 2.5 11 17 - 2748 - 60.4 SO-8 DMP3020LSS Single N -30 ±25 -12 2.5 14 25 - 1802 15.3 30.7 SO-8 DMP3035LSS Single N -30 ±25 -12 2.5 16 35 - 1655 - 30.7 SO-8 DMG4435SSS Single N -30 ±25 -7.3 1.3 20 29 - 1614 18.9 35.4 SO-8 ZXM66P03N8 Single N -30 ±20 -7.9 2.5 25 35 - 1979 - 62.5 SO-8 DMP3025LK3 Single N -30 ±20 -16 10 25 41 - 1678 16.5 31.6 TO252-3L SO-8 a ZXMP3F37DN8 a a Dual N -30 ±20 -8.3 1.8 25 41 - 1678 16.5 31.6 ZXMP3F37N8 Single N -30 ±20 -10.7 2.8 25 41 - 1678 16.5 31.6 SO-8 DMP3056LDM Single N -30 ±20 -4.3 1.25 45 56 - 722 6.8 13.7 SOT23-6 DMP3056LSD Dual N -30 ±20 -6.9 2.5 45 65 - 722 6.8 13.7 SO-8 DMP3056LSS Single N -30 ±20 -7.1 2.5 45 65 - 722 6.8 13.7 SO-8 ZXMP3A16N8 Single N -30 ±20 -6.7 2.8 40 70 - 1022 - 29.6 SO-8 ZXMP3A16DN8 Dual N -30 ±20 -5.5 2.1 45 70 - 1022 - 29.6 SO-8 ZXMP3A16G Single N -30 ±20 -7.5 3.9 45 70 - 1022 - 25 SOT223 DMP3098LDM Single N -30 ±20 -4 1.25 65 115 - 336 4 7.8 SOT23-6 DMP3098LSD Dual N -30 ±20 -4.4 1.8 65 115 - 336 4 7.8 SO-8 DMP3098LSS Single N -30 ±20 -5.3 2.5 65 115 - 336 4 7.8 SO-8 ZXMP3A17DN8 Dual N -30 ±20 -4.4 2.1 70 110 - 630 - 15.8 SO-8 ZXMP3A17E6 Single N -30 ±20 -4 1.7 70 110 - 630 - 15.8 SOT23-6 DMP3098L Single N -30 ±20 -3.8 1.08 70 120 - 336 4 7.8 MSOP8 ZXM64P03X Single N -30 ±20 -3.8 1.1 75 100 - 825 - 46 MSOP8 DMP3130L Single N -30 ±12 -3.5 1.4 77 95 150 432 5.9 12 SOT23 ZXMP3F30FH Single N -30 ±20 -3.4 1.4 80 140 - 370 - 7 SOT23 DMP3160L Single N -30 ±20 -2.7 1.08 122 190 - 227 - - SOT23 ZXM62P03E6 Single N -30 ±20 -1.5 0.625 150 200 - 330 - 10 SOT23-6 ZXMD63P03X Dual N -30 ±20 2 1.25 185 270 - 270 - 7 MSOP8 ZXMP3A13F Single N -30 ±20 -1.6 0.806 210 330 - 206 - 6.4 SOT23 DMP3030SN Single Y -30 ±20 -0.7 0.5 250 450 - 160 - - SC59 ZXM61P03F Single N -30 ±20 -1.1 0.625 350 550 - 140 - 4.8 SOT23 DMP3120L Single N -30 ±12 -2.8 1.4 - 120 240 285 3 6.7 SOT23 DMG2307L Single N -30 ±20 -3.2 0.76 90 134 - 371.3 4 8.2 SOT23 Page 10 THE DIODES ADVANTAGE DMP3010LPS Did you know? The PowerDI®5060 package has a typical Rthj-c of 2.1ºC/W which is 10 times lower than the familiar SO8 package. This superior thermal performance improves power dissipation, reducing MOSFET junction temperature, enabling cooler, more reliable running. The low typical RDS(ON) of the DMP3010LPs ensures that on state losses are kept to a minimum during load switching and battery charging. Product benefits The DMP3010LPS is qualified to AECQ101 standard and is RoHS compliant. Low thermal resistance The PowerDI5060 package has a typical Rthj-c of 2.1ºC/W. Low profile package The PowerDI5060 has a package profile that is <1.1mm making it ideal for thin applications. Avalanche rated The DMP3010LPS has been designed to withstand the high pulse avalanche energy that can be induced by inductive loads. PowerDI is a registered trademark of Diodes Incorporated 30V Complementary Part Number ESD Configuration Type Diode (Y/N) DMC3018LSD Complementary N a a DMC3021LSD ZXMC3F31DN8 DMC3028LSD ZXMC3A16DN8 DMC3032LSD DMG6602SVT ZXMC3AMC ZXMD63C03X N a VDS (V) VGS (V) 30 ±20 a a RDS(ON) (mΩ max) Ciss typ. (pF) at VGS= @ VDS=±15V @TA=25°C @TA=25°C 10V 4.5V ID (A) 9.1 a a Complementary Complementary Complementary Complementary Complementary Complementary Complementary Complementary PD (W) 2.5 Qg typ. (nC) @ VGS=4.5V Qg typ. (nC) @ VGS=10V 20 a 32 a 631 a 5.9 a a 12.4 45 65 772 7 13.7 21 32 767 7.8 16.1 39 53 1002 10.1 21.1 24 39 742 - 16.4 46 80 820 - 15.2 a a P N -30 ±20 -6 N P N 30 ±20 8.5 N -30 ±20 -7 N P N 30 ±20 7 N -30 ±20 -4.5 N P N 30 ±20 7.1 N -30 ±20 -7.4 N N 30 ±20 6.4 P N -30 ±20 -5.4 P N -30 ±20 -7 N N 30 ±20 8.1 2.5 2.1 2.1 2.1 2.5 28 45 472 5.2 10.5 25 41 1678 16.4 31.6 35 50 796 - 17.5 48 70 970 - 24.9 39 53 1002 10.1 21.1 32 46 404.5 - 9.2 N N 30 ±20 3.4 1.12 60 100 305 6 13 P N 30 ±20 -2.8 1.12 95 140 336 - 10 N N 30 ±20 3.7 P N -30 ±20 -2.7 N N 30 ±20 2.3 P N -30 ±20 -2 2.45 1.25 Package 120 180 190 2.3 3.9 210 330 206 3.8 6.4 135 200 300 - 6.1 185 270 280 - 5.4 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 TSOT23-6 DFN3020-8 MSOP8 Page 11 31V to 99V N-channel Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ. (pF) @ VDS=1/2VDS Qg typ. (nC) @ VGS=10V Package DMN4009LK3 Single N a 40 a ±20 27.6 a 10.3 8.5 14 a 2072 42 a TO252-3L DMN4015LK3 Single N 40 ±20 20.8 10.3 15 20 - 2072 42 TO252-3L DMN4025SFG Single N 40 ±20 6.7 1.82 25 40 - 1790 16 PowerDI3333 DMN4027SSD Dual N 40 ±20 7.1 2.1 27 47 - - 12.9 SO-8 DMN4027SSS Single N 40 ±20 8 2.8 27 47 - - 12.9 SO-8 DMN4030LK3 Single N 40 ±20 13.7 8.9 30 50 - 604 12.9 TO252-3L DMN4040SK3 Single N 40 ±20 13.8 8.9 30 54 - 945 18.6 TO252-3L DMN4034SSD Dual N 40 ±20 6.3 2.1 34 59 - - 10 SO-8 DMN4034SSS Single N 40 ±20 7.2 2.8 34 59 - - 10 SO-8 DMN4036LK3 Single N 40 ±20 12.2 8.5 36 61 - 453 9.2 TO252-3L a ZXMN6A09DN8 a a a a a a a a Dual N 60 ±20 5.6 2.1 40 60 - 1407 24.2 S0-8 ZXMN6A09G Single N 60 ±20 7.5 3.9 40 60 - 1407 24.2 SOT223 ZXMN6A09K Single N 60 ±20 12.2 10.1 40 60 - 1426 29 TO252-3L Dual N 60 ±20 5 2.1 50 70 - 1063 20.4 S0-8 ZXMN6A25G Single N 60 ±20 6.7 3.9 50 70 - 1063 20.4 SOT223 ZXMN6A25K Single N 60 ±20 10.7 9.85 50 70 - 1063 20.4 TO252-3L ZXMN6A25N8 Single N 60 ±20 5.7 2.8 50 70 - 1063 20.4 S0-8 ZXMN4A06G Single N 40 ±20 7 3.9 50 75 - 770 18.2 SOT223 ZXMN4A06K Single N 40 ±20 10.9 9.5 50 75 - 827 17.1 TO252-3L DMN6066SSD Dual N 60 ±20 4.4 2.1 66 97 - 502 10.3 SO-8 DMN6066SSS Single N 60 ±20 5 2.8 66 97 - 502 10.3 SO-8 DMN6068LK3 Single N 60 ±20 8.5 8.5 68 100 - 502 10.3 T0252-3L DMN6068SE Single N 60 ±20 5.6 3.7 68 100 - 502 10.3 SOT223 ZXMN6A08E6 Single N 60 ±20 3.5 1.7 80 150 - 459 5.8 SOT23-6 ZXMN6A08G Single N 60 ±20 5.3 3.9 80 150 - 459 5.8 SOT223 ZXMN6A08K Single N 60 ±20 18.2 9.25 80 150 - 459 5.8 T0252-3L ZXMN6A25DN8 ZXMN6A11DN8 Dual N 60 ±20 3.2 2.1 120 180 - 330 5.7 S0-8 ZXMN6A11G Single N 60 ±20 4.4 3.9 120 180 - 330 5.7 SOT223 ZXMN6A11Z Single N 60 ±20 3.6 2.6 120 180 - 330 5.7 SOT89 ZXMN7A11G Single N 70 ±20 3.8 3.9 130 190 - 298 7.4 SOT223 ZXMN7A11K Single N 70 ±20 6.1 8.5 130 190 - 298 7.4 TO252-3L ZXMN6A07F Single N 60 ±20 1.4 0.806 250 350 - 166 3.2 SOT23 ZXMN6A07Z Single N 60 ±20 2.5 2.6 250 350 - 166 3.2 SOT89 ZVN4306AV Single N 60 ±20 1.1 0.85 330 450 (@5V) - 350 - E-Line ZVN4306G Single N 60 ±20 2.1 3 330 450 (@5V) - 350 - SOT223 ZVN4306GV Single N 60 ±20 2.1 3 330 450 (@5V) - SOT223 ZVN4206A Single N 60 ±20 0.6 0.7 1000 1500 ZVN4206AV Single N 60 ±20 0.6 0.7 1000 1500 (@5V) ZVN4206G Single N 60 ±20 1 2 1000 ZVN4206GV Single N 60 ±20 1 2 1000 DMN62D1SFB Single N 60 ±20 0.4 0.47 DMN5010VAK Dual Y 50 ±20 0.28 DMN5L06DMK Dual Y 50 ±20 0.305 DMN5L06DWK 350 - 100 2.4 E-Line - 100 - E-Line 1500 (@5V) - 100 - SOT223 1500 (@5V) - 100 - SOT223 1400 1600 - 40 1.4 DFN1006-3 0.25 - 2000 (@5V) 2500 50 (max) - SOT563 0.25 - 2000 (@5V) 2500 50 (max) - SOT23-6 SOT363 Dual Y 50 ±20 0.305 0.25 - 2000 (@5V) 2500 50 (max) - DMN5L06K Single Y 50 ±20 0.3 0.35 - 2000 (@5V) 2500 50 (max) - SOT23 DMN5L06TK Single N 50 ±20 0.28 0.15 - 2000 (@5V) 2500 50 (max) - SOT523 DMN5L06VAK Dual Y 50 ±20 0.28 0.25 - 2000 (@5V) 2500 50 (max) - SOT563 DMN5L06VK Dual Y 50 ±20 0.28 0.25 - 2000 (@5V) 2500 50 (max) - SOT563 DMN5L06WK Single Y 50 ±20 0.3 0.25 - 2000 (@5V) 2500 50 (max) - SOT323 DMN601VK Dual Y 60 ±20 0.305 0.2 2000 3000 - 50 (max) - SOT563 DMN601WK Single Y 60 ±20 0.3 0.2 2000 3000 - 50 (max) - SOT323 DMN601TK Single Y 60 ±20 0.3 0.15 2000 3000 - 50 - SOT523 Page 12 31V to 99V N-channel (continued) Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ. (pF) @ VDS=1/2VDS Qg typ. (nC) @ VGS=10V Package DFN1006-3 DMN62D0LFB Single Y 60 ±20 0.1 0.47 - 2000 2500 28 305 ZVN2106A Single N 60 ±20 0.45 0.7 2000 - - 75 - E-Line ZVN2106G Single N 60 ±20 0.71 2 2000 - - 75 - SOT223 2N7002K Single Y 60 ±20 0.3 0.35 2000 3000 (@5V) - 50 (max) - SOT23 Dual Y 60 ±20 0.305 0.2 2000 3000 (@5V) - 50 (max) - SOT363 SOT23 DMN601DWK DMN601K Single Y 60 ±20 0.3 0.35 2000 3000 (@5V) - 50 (max) - ZVN4106F Single N 60 ±20 0.2 0.33 2500 5000 (@5V) - 35 - SOT23 2N7002W Single N 60 ±20 0.115 0.2 2600 1800 (@5V) - 22 - SOT323 2N7002A Single - 60 ±20 0.115 0.25 3000 3500 23 - SOT23 2N7002E Single N 60 ±20 0.24 0.3 3000 4000 - 22 - SOT23 BSS138 - 7 Single N 50 ±20 0.2 0.3 3500 - - 50 (max) - SOT23 Dual N 50 ±20 0.2 0.2 3500 - - 50 - SOT363 BSS138W Single N 50 ±20 0.2 0.2 3500 - - 50 (max) - SOT323 MMBF170 Single N 60 ±20 -0.5 0.3 5000 5300 - 22 - SOT23 VN10LF Single N 60 ±20 0.15 0.33 5000 7500 BS870 Single N 60 ±20 0.25 0.3 5000 - - 22 - SOT23 ZVN3306A Single N 60 ±20 0.27 0.625 5000 - - 35 - E-Line ZVN3306F Single N 60 ±20 0.15 0.33 5000 - - 35 - SOT23 DMN55D0UT Single Y 50 ±12 0.16 0.2 - 6000 (@4V) 5000 25 - SOT523 Dual Y 60 ±20 0.115 0.25 5000 6000 (@5V) - 23 - SOT363 DMN66D0LT Single Y 60 ±20 0.115 0.22 5000 6000 (@5V) - 23 - SOT523 DMN66D0LW Single Y 60 ±20 0.115 0.25 5000 6000 (@5V) - 23 - SOT323 VN10LP Single N 60 ±20 0.27 0.625 5000 7500 (@5V) - 60 - E-Line 2N7002 -7 Single N 60 ±20 0.115 0.3 13500 7500 (@5V) - 22 - SOT23 BSS138DW DMN66D0LDW 2N7002DW 2N7002T 2N7002VAC SOT23 Dual N 60 ±20 0.115 0.3 13500 7500 (@5V) - 22 - SOT363 Single N 60 ±20 0.115 0.15 13500 7500 (@5V) - 22 - SOT523 Dual N 60 ±20 0.28 0.15 13500 7500 (@5V) - 50 (max) - SOT563 Configuration Q1 Q1 MOSFET plus BJT Part Number 60 or ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) 25°C 25°C Y 50 ±12 0.16 0.25 RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V - 4000 (@4V) 5000 Ciss typ. (pF) Qg typ. (nC) @ VGS=10V Package 25 - a SOT363 DMB53D0UDW N channel plus NPN DMB53D0UV N channel plus NPN Y 50 ±12 0.16 0.25 - 4000 (@4V) 5000 25 - SOT563 DMB54D0UDW N channel plus PNP Y 50 ±12 0.16 0.25 - 4000 (@4V) 5000 25 - SOT363 DMB54D0UV N channel plus PNP Y 50 ±12 0.16 0.25 - 4000 (@4V) 5000 25 - SOT563 THE DIODES ADVANTAGE a a a a a a a a a a a a a Co-packaged MOSFET and Bipolar Did you know? Diodes Incorporated offers designers a range of co-packaged discrete circuit elements. The DMB5xxx series co-packages an N-channel enhancement mode MOSFET and a Bipolar Junction Transistor in small leadless packages such as SOT363/563. The DMB5xxx series allows designers to replace two discrete circuit elements or to configure load switches that provide the benefits of both technologies. For example, a load switch that utilizes a bipolar as the ‘pass element’ can be used in circuits where the output voltage is higher than that of the input – the intrinsic body diode of a MOSFET would conduct under such conditions. Page 13 31V to 99V P-channel Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ. (pF) Qg typ. (nC) @ VGS=10V Package DMP4025SFG Single N a -40 a ±20 -7 a 1.82 a 25 a 45 a a a a a PowerDI3333 DMP4050SSS Single N -40 ±20 -6 2.8 50 70 - 674 13.9 SO-8 DMP4050SSD Dual N -40 ±20 -5.2 2.1 50 79 - 674 13.9 SO-8 DMP4051LK3 Single N -40 ±20 -10.5 8.9 51 85 - 674 14 TO252-3L Dual N -60 ±20 -4.8 2.1 55 80 - 1580 44 S0-8 ZXMP6A18K Single N -60 ±20 -10.4 10.1 55 80 - 1580 44 TO252-3L ZXMP4A16G Single N -40 ±20 -6.4 3.9 60 100 - 1007 26.1 SOT223 ZXMP4A16K Single N -40 ±20 -9.9 9.5 60 100 - 965 29.6 TO252-3L ZXMP4A57E6 Single N -40 ±20 -3.7 1.7 80 150 - 833 15.8 SOT26 Dual N -60 ±20 -3.9 2.15 85 125 - 1021 24.2 S0-8 Single N -60 ±20 -8.2 9.76 85 125 - 1021 24.2 TO252-3L a ZXMP6A18DN8 ZXMP6A16DN8 ZXMP6A16K ZXMP6A17DN8 a a a Dual N -60 ±20 -3.2 2.15 125 190 - 637 17.7 S0-8 ZXMP6A17E6 Single N -60 ±20 -3 1.7 125 190 - 637 17.7 SOT23-6 ZXMP6A17G Single N -60 ±20 -4.1 3.9 125 190 - 637 17.7 SOT223 ZXMP6A17K Single N -60 ±20 -6.6 9.3 125 190 - 637 17.7 S0-8 ZXMP6A17N8 Single N -60 ±20 -3.4 2.5 125 190 - 637 17.7 SO-8 ZXMP7A17G Single N -70 ±20 -3.7 3.9 160 250 - 635 18 SOT223 ZXMP7A17K Single N -70 ±20 -5.7 9.25 160 250 - 635 18 TO252-3L ZXMP6A13G Single N -60 ±20 -2.3 3.9 390 595 - 219 5.9 SOT223 ZXMP6A13F Single N -60 ±20 -1.1 0.806 400 600 - 219 5.9 SOT23 DMP58D0LFB Single Y -50 ±20 -1.8 0.47 - 8000 - 27 - DFN1006-3 BSS138 Single N 50 ±20 0.2 0.3 3500 - - 50 (max) - SOT23 Dual N 50 ±20 0.2 0.2 3500 - - 50 - SOT363 BSS138W Single N 50 ±20 0.2 0.2 3500 - - 50 (max) - SOT323 ZVP2106A Single N -60 ±20 -0.28 0.7 5000 - - 100 - E-Line ZVP2106G Single N -60 ±20 -0.45 2 5000 - - 100 - SOT223 ZVP4105A Single N -50 ±20 -0.175 0.625 10000 - - 40 - E-Line BS250F Single N -45 ±20 -0.09 0.33 14000 - - 25 - SOT23 ZVP3306A Single N -60 ±20 -0.16 0.625 14000 - - 50 - E-Line ZVP3306F Single N -60 ±20 -0.09 0.33 14000 - - 50 - SOT23 BS250P Single N -45 ±20 -0.23 0.7 14000 - - 60 - E-Line DMP57D5UFB Single Y -50 ±8 -0.2 0.425 - 6000 (@4V) 8000 29 - DFN1006-3 DMP57D5UV Dual Y -50 ±8 -0.16 -0.4 - 6000 (@4V) 8000 29 - SOT563 DMP58D0SV Dual Y -50 ±20 -0.16 - - 8000 (@5V) - 27 - DFN1006-3 BSS84DW Dual N -50 ±20 -0.13 0.3 - 10000 (@10V) - 45 (max) - SOT363 BSS84W Single N -50 ±20 -0.13 0.2 - 10000 (@5V) - 45 (max) - SOT323 BSS84W Single N -50 ±20 -0.13 0.2 - 10000 (@5V) - 45 (max) - SOT323 BSS84V Dual N -50 ±20 -0.13 0.15 - 10000 (@5V) - 45 (max) - SOT563 BSS84 Single N -50 ±20 -0.13 0.3 - 10000 (@-5V) - 45 - SOT23 BSS138DW Page 14 THE DIODES ADVANTAGE A Focus on Applications Did you know? Strong customer relationships and a deep understanding of their end applications are the primary drivers of the Diodes product development strategy. For example, Diodes Incorporated has recently worked with one of its major customers to develop a 40V complementary pair to meet the stringent requirements of brushless DC motor (BLDC) circuits. The result of this collaboration is the DMC4040SSD. A 40V VDS complementary dual that features matched RDS(ON), to ensure motor load losses are balanced and minimized, and is able to handle continuous currents of 6A and peak start up currents of up to 5 times continuous. Product benefits Matched RDS(ON) The DMC4040SSD features matched RDS(ON) of 25mΩ ensuring motor load losses are balanced and minimized. 29A Pulsed current rating The DMC4040SSD has a pulsed current rating of 29A, enabling motor torque currents of up to five times the continuous current to be supported during motor start up or stalled motor conditions. The DMC4040SSD is suited to use in 24V DC motor system controlling cooling and extractor fans, pumps, compressors and printer heads. 40V VDS rating 40V VDS rating provides sufficient guardband for voltage spikes/transients to ensure safe operation from 24V DC supplies. 31V to 100V Complementary Part Number DMC4040SSD a ZXMC4A16DN8 ZXMC4559DN8 ZXMC6A09DN8 DMC4511SK4 BSS8402DW ZXMC10A816N8 Configuration Complementary VDS (V) 40 a ±20 -40 ±20 a Complementary Complementary Complementary Complementary Complementary Complementary VGS (V) ID (A) PD (W) @TA=25°C @TA=25°C 7 a a 1.8 RDS(ON) (mΩ max) at VGS= 10V Ciss typ. (pF) Qg typ. (nC) @ VGS=10V 4.5V 25 a 40 a 1790 a a 16 25 45 1643 14 a a -5.7 40 ±20 5.2 -40 ±20 -4.7 60 ±20 4.7 -60 ±20 -3.9 60 ±20 5.1 -60 - -4.8 35 ±20 13 -35 ±20 -12 60 ±20 0.115 -50 - -0.13 100 ±20 2.1 -100 ±20 -2.2 2.1 2.2 2.1 4.1 0.2 2.4 Package 50 75 770 17 60 100 1000 26 55 75 1063 20.4 85 125 1021 24.2 45 70 1407 24.2 55 80 1508 44 35 65 850 18.7 45 65 985 19.2 7500 13500 22 - - 10000 (@5V) 45 - 230 300 497 9.2 235 320 717 16.5 SO-8 SO-8 SO-8 SO-8 TO252-4L SOT363 SO-8 Page 15 100V plus N-channel Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) 25°C 25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ. (pF) Qg typ. (nC) @ VGS=10V Package ZXMN10A09K Single N a 100 a ±20 7.7 a 10.1 a 85 a 100 (@6V) a 1313 a 26 a a TO252-3L ZXMN10A25K Single N 100 ±20 6.4 4.25 125 150 (@6V) - 859 17.16 TO252-3L ZXMN10A25G Single N 100 ±20 4 2 125 150 (@6V) - 859 17 SOT223 ZXMN10A08E6 Single N 100 ±20 1.9 1.7 250 300 (@ 6V) - 405 7.7 SOT23-6 ZXMN10B08E6 Single N 100 ±20 1.9 1.7 230 300 - 497 9.2 SOT23-6 Dual N 100 ±20 2.1 1.25 250 300 (@6V) - 405 7.7 S0-8 ZXMN10A08G Single N 100 ±20 2.9 2 250 300 (@6V) - 405 7.7 SOT223 ZXMN10A11G Single N 100 ±20 2.4 3.9 350 450 (@6V) - 274 5.4 SOT223 ZXMN10A11K Single N 100 ±20 3.5 4.06 350 450 (@6V) - 274 5.4 TO252-3L ZVN4310A Single N 100 ±20 0.9 0.85 500 650 (@5V) - 350 - E-Line ZVN4310G Single N 100 ±20 1.67 3 540 750 (@5V) - 350 - SOT223 ZXMN10A07F Single N 100 ±20 0.8 0.625 700 900 (@6V) - 138 2.9 SOT23 ZXMN10A07Z Single N 100 ±20 1.4 1.5 700 900 (@6V) - 138 2.9 SOT89 ZXMN15A27K Single N 150 ±20 2.6 9.5 650 - - 169 6.6 TO252-3L ZXMN20B28K Single N 200 ±20 2.3 10.2 750 780 - 358 12.9 TO252-3L ZVN4210A Single N 100 ±20 0.45 0.7 1500 1800 (@5V) - 100 - E-Line ZVN4210G Single N 100 ±20 0.8 2 1500 1800 (@5V) - 100 - SOT223 ZVNL110A Single N 100 ±20 0.32 0.7 3000 4500 (@5V) - 75 - E-Line ZVNL110G Single N 100 ±20 0.6 2 3000 4500 (@5V) - 75 - SOT223 ZVN2110A Single N 100 ±20 0.32 0.7 4000 - - 75 - E-Line ZVN2110G Single N 100 ±20 0.5 2 4000 - - 59 - SOT223 ZXMN15A24E6 Single N 150 ±20 0.58 1.1 2500 - - 54 2 SOT23-6 ZVN4424A Single N 240 ±40 0.26 0.75 5500 - 6000 110 - E-Line ZVN4424G Single N 240 ±40 0.5 2.5 5500 - 6000 110 - SOT223 ZVN4424Z Single N 240 ±40 0.3 1 5500 - 6000 110 - SOT89 BSS123 Single N 100 ±20 0.17 0.3 6000 10000 - 29 - SOT23 BSS123(Z) Single N 100 ±20 0.17 0.36 6000 - - 20 - SOT23 BSS123A Single N 100 ±20 0.17 0.36 6000 10000 - 25 - SOT23 BSS123W Single N 100 ±20 0.17 0.2 6000 10000 - 29 - SOT323 ZVN4525E6 Single N 250 ±40 0.23 1.1 8500 9000 9500 (@2.4V) 72 2.6 SOT23-6 ZVN4525G Single N 250 ±40 0.31 2 8500 9000 9500 (@2.4V) 72 2.6 SOT223 ZVN4525Z Single N 250 ±40 0.24 1.2 8500 9000 9500 (@2.4V) 72 2.6 SOT89 ZVN3310A Single N 100 ±20 0.2 0.625 10000 - - 40 - E-Line ZVN3310F Single N 100 ±20 0.1 0.33 10000 - - 40 - SOT23 ZVN2120A Single N 200 ±20 0.18 0.7 10000 - - 85 - E-Line ZVN2120G Single N 200 ±20 0.32 2 10000 - - 85 - SOT223 ZVN0124A Single N 240 ±20 0.16 0.7 16000 - - 85 - E-Line ZVN3320F Single N 200 ±20 0.06 0.33 25000 - - 45 - SOT23 BS107P Single N 200 ±20 0.12 0.5 - 30000 23000 (@2.6V) 58 2.7 E-Line ZVNL120A Single N 200 ±20 0.18 0.7 - 10000 (@5V) 10000 (@3V) 85 - E-Line ZVNL120G Single N 200 ±20 0.32 2 - 10000 (@5V) 10000 (@3V) 85 - SOT223 ZVN0540A Single N 400 ±20 0.09 0.7 50000 - - 70 - E-Line ZVN0545A Single N 450 ±20 0.09 0.7 50000 - - 70 - E-Line ZVN0545G Single N 450 ±20 0.14 2 50000 - - 70 - SOT223 ZXMN0545G4 Single N 450 ±20 0.14 2 50000 - - 70 - SOT223 a ZXMN10A08DN8 Page 16 a a a a 100V plus P-channel Part Number Configuration ESD Diode (Y/N) VDS (V) ID (A) VGS (V) PD (W) @TA=25°C @TA=25°C RDS(ON) (mΩ max) at VGS= 10V 4.5V 2.5V Ciss typ. (pF) @ VDS= 1/2VDS Qg typ. (nC) @ VGS=10V Package ZXMP10A18G Single a N a -100 a ±20 a -3.7 a 3.9 150 190 (@6V) a 1055 26.9 a a SOT223 ZXMP10A18K Single N -100 ±20 -5.9 10.2 150 190 (@6V) - 1055 26.9 TO252-3L ZXMP10A16K Single N -100 ±20 4.6 9.76 235 285 (@6V) - 717 16.5 TO252-3L ZXMP10A17K Single N -100 ±20 -1.6 1.7 350 450 (@6V) - 424 10.7 TO252-3L ZXMP10A17E6 Single N -100 ±20 -1.6 1.7 350 450 (@6V) - 424 10.7 SOT236 ZXMP10A17G Single N -100 ±20 -2.4 3.9 350 450 (@6V) - 424 10.7 SOT233 ZXMP10A13F Single N -100 ±20 -0.7 0.806 1000 1450 (@6V) - 141 3.5 SOT23 ZVP2110A Single N -100 ±20 -0.23 0.7 8000 - - 100 - E-Line ZVP2110G Single N -100 ±20 -0.31 2 8000 - - 100 - SOT223 ZVP4424A Single N -240 ±40 -0.2 0.75 9000 - 11000 (@3.5V) 100 - E-Line ZVP4424G Single N -240 ±40 -0.48 2.5 9000 - 11000 (@3.5V) 100 - SOT223 ZVP4424Z Single N -240 ±40 -0.2 1 9000 - 11000 (@3.5V) 100 - SOT89 ZVP4525E6 Single N -250 ±40 -0.197 1.1 14000 - 18000 (@3.5V) 73 2.45 SOT23-6 ZVP4525G Single N 250 ±40 -0.265 2 14000 - 18000 (@3.5V) 73 2.45 SOT223 ZVP4525Z Single N 250 ±40 -0.205 1.2 14000 - 18000 (@3.5V) 73 2.45 SOT89 ZVP3310A Single N -100 ±20 -0.14 0.625 20000 - - 50 - E-Line ZVP3310F Single N -100 ±20 -0.075 0.33 20000 - - 50 - SOT23 ZVP2120A Single N -200 ±20 -0.12 0.7 25000 - - 100 - E-Line ZVP2120G Single N -200 ±20 -0.2 2 25000 - - 100 - SOT223 ZXMP2120G4* Single N -200 ±20 0.2 2 25000 - - 100 - SOT223 ZXMP2120E5* Single N -200 ±20 -0.122 0.75 28000 - - 100 - SOT23-5 ZXMP2120FF Single N -200 ±20 -0.137 1 28000 - - 100 - SOT23F ZVP1320F Single N -200 ±20 -0.035 0.33 80000 - - 50 - SOT23 ZVP0545A Single N -450 ±20 -0.045 0.7 150000 - - 120 ** E-Line ZVP0545G Single N -450 ±20 -0.075 2 150000 - - 120 ** SOT223 THE DIODES ADVANTAGE a a a a a a MOSFET portfolio optimized for VoIP Did you know? Diodes Incorporated provides the designers of Voice over Internet Protocol (VoIP) communication equipment with a range of rugged MOSFETs that significantly reduces circuit complexity and cost. For example, DMN60xx series are designed to handle the high pulse current needed to generate tip and ring linefeeds and to withstand the avalanche energy induced during switching. This meets the stringent requirements of primary switch position in transformer based Subscriber Line Interface Circuits (SLIC) DC/DC converters. Product features High Pulse current (IDM) With high IDM handling capabilities, the MOSFETs can drive the transformer to deliver the required RING and TIP currents. Avalanche Rugged These MOSFETs have been designed to withstand the high pulse avalanche energy that will be induced by the transformer during switching transition. Low gate charge (Qg) and input capacitance (Ciss) This simplifies the SLIC design and reduces component count and cost. These MOSFETs are capable of being driven at low logic level voltages. Page 17 Protected MOSFETs (IntelliFET) Part Number Polarity TAB VDS ID (A) PD (W) RDS(ON) (mΩ max) at VIN= VDS(S/C) (V) @TA=25°C @TA=25°C 3V 5V 10V VIN=5V EAS (mJ) Package ZXMS6006DG N a Drain 60 2.8 3 a 0.1 a 125 a a 36 490 a a SOT223 ZXMS6006DT8 N N/A 60 2.8 2.1 0.1 100 - 36 210 SM-8 ZXMS6006SG N Source 60 2.8 3 0.1 125 - 36 490 SOT223 ZXMS6005DG N Drain 60 2 3 250 200 - 24 490 SOT223 ZXMS6005DT8 N N/A 60 1.8 2.13 250 200 - 24 210 SM-8 ZXMS6005SG N Source 60 2 1.6 250 200 - 24 480 SOT223 ZXMS6005N8 N N/A 60 - - 250 200 - 24 - S0-8 ZXMS6005DN8 N N/A 60 - - 250 200 - 24 - S0-8 ZXMS6004DG N Drain 60 1.3 3 600 500 - 36 490 SOT223 ZXMS6004DT8 N N/A 60 1.2 2.13 600 500 - 36 210 SM-8 ZXMS6004FF N N/A 60 1.3 1.5 600 500 - 36 90 SOT23F ZXMS6004SG N Source 60 1.3 1.6 600 500 - 36 480 SOT223 ZXMS6003G N Drain 60 1.4 2.5 - 675 550 36 550 SOT223 ZXMS6002G N Drain 60 1.4 2.5 - 675 550 36 550 SOT223 ZXMS6001N3 N Source 60 1.1 1.5 2000 675 - 36 550 SOT223 BSP75G N Drain 60 1.4 2.5 - 675 550 36 550 SOT223 BSP75N N Source 60 1.2 1.5 - 675 550 36 550 SOT223 THE DIODES ADVANTAGE a a a a a a Self- protected MOSFET (IntelliFET) Did you know? Diodes Incorporated designs, develops and manufactures a range of low-side self-protected MOSFETs that are ideal for switching inductive loads, such as motors, relays and lamps at low frequencies. These devices feature overtemperature, over voltage, and over current protection as well input ESD protection facilities enabling circuit designers to dramatically increase reliability. Product features Over voltage, over-temperature and over-current protection The Diodes IntelliFET portfolio is packaged in the SO8, SM8, SOT223 and the SOT23F package, enabling the industry’s smallest self-protected MOSFET. Typical RDS(ON) as low as 80mΩ Low RDS(ON) minimizes the conduction losses through the device. 3V and 5.5V inputs IntelliFET portfolio can be driven directly from a microcontroller. Low thermal resistance of SM8 package The SM8 package has a thermal resistance 30% lower than competing SO8 solutions, enabling cooler running more reliable end applications. Two independent and isolated self-protected MOSFETs Co-packaging two self-protected MOSFETs enables one dual SM8 to replace two SOT223 whilst delivering the same thermal performance. Qualified to AECQ101 Fully meets the requirements of AECQ1010 standard of the Automotive Electronics Council. Page 18 THE DIODES ADVANTAGE H-bridge Did you know? Diodes Incorporated is the only vendor to offer a range of unique discrete H-bridges. Featuring dual complementary pairs of N- and P-type MOSFETs packaged in either the SO8 or SM8 package, they dramatically simplify DC fan and Cold Cathode Fluorescent Lamp (CCFL) inverter circuits as they can replace either four discrete SOT23 packaged MOSFETs or two complementary pairs, reducing both component count and PCB size in space constrained applications. A further benefit of these products is the reduction in overall inventory cost as only one device instead of two or four has to be sourced. Product benefits Simplified designs One MOSFET H-bridge can replace two dual SO8’s, reducing PCB area footprint by 50%. The SO8 H-bridge portfolio comprises two 30V H-bridge, the ZXMHC3A01N8 and ZXMHC3F381N8, that are well-suited for 12V DC fan and inverter applications and offer users a choice of low RDS(ON) performance. The 60V rated ZXMHC6A07N8 and 100V rated ZXMHC10A07N8 are targeted at 24V DC and 48V DC motor control circuits, respectively. Reduce component count One MOSFET H-bridge can replace two dual SO8’s, reducing component count and PCB area. Reduce inventory cost Only one component needs to be stocked instead of 2 or 4. H-bridge Part Number ZXMHC3F381N8 a ZXMHC3A01N8 ZXMHC3A01T8 ZXMHC6A07N8 ZXMHC6A07T8 ZXMHN6A07T8 ZXMHC10A07N8 ZXMHC10A07T8 Configuration H-bridge Type ESD Diode (Y/N) VDS (V) VGS (V) ID (A) PD (W) 25°C 25°C 2*N a N 30 a ±20 a 5 2*P N -30 ±20 -4.1 a a a H-bridge H-bridge H-bridge H-bridge H-bridge H-bridge H-bridge 1.3 RDS(ON) (mΩ max) at VGS= 10V Ciss typ. (pF) 4.5V Qg typ. (nC) @ VGS=10V 33 a 60 430 a 9a 55 80 670 12.7 a a a 2*N N 30 ±20 2.7 2*P N -30 ±20 -2.1 2*N N 30 ±20 3.1 2*P N -30 ±20 -2.3 2*N N 60 ±20 1.8 2*P N -60 ±20 -1.4 2*N N 60 ±20 1.8 2*P N -60 ±20 -1.5 4*N N 60 ±20 1.8 2*N N 100 ±20 1.1 2*P N -100 ±20 -0.9 2*N N 100 ±20 1.1 2*P N -100 ±20 -0.9 1.3 1.7 1.3 1.7 1.7 1.3 1.3 Package 125 180 194 3.9 210 330 204 5.2 125 180 194 3.9 210 330 204 5.2 250 350 166 3.2 400 600 233 5.1 300 450 166 3.2 425 630 233 5.1 300 450 166 3.2 700 900 138 2.9 1000 1450 141 3.5 700 900 138 2.9 1000 1450 141 3.5 SO-8 SO-8 SM8 SO-8 SM8 SM8 SO-8 SM8 Page 19 CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE 4949 Hedgcoxe Road Suite 200 Plano, Texas 75024 972-987-3900 USA E-mail: [email protected] EUROPE SALES OFFICE Kustermann-Park Balanstrasse 59, 8th Floor D-81541 Munchen, Germany Tel: (+49) 89 45 49 49 0 E-mail: [email protected] ASIA SALES OFFICES Email: [email protected] DIODES-TAIWAN 7F, No. 50, Min Chuan Road, Hsin-Tien, Taipei, Taiwan, R.O.C. Tel: 011-886-2-8914-6000 SHANGHAI OFFICE Room 3001-2 No 3000, North Zhongshan Road Shanghai, China 200063 Tel: 86 21-5241-4882 SHENZHEN OFFICE Room A1103-04, ANLIAN Plaza, #4018 Jintian Road, Futian CBD, Shenzhen, China Tel: 86 755-88284988 DIODES-KOREA 1601 ho, ParkView Tower Jeongja 1 dong, Bundang-gu Seongnam-si, Gyeonggi-do, Korea 463-811 Tel: 82-31-786-0434 For information or literature, please visit www.diodes.com/contacts MB 2 | Dec 2011 diodes.com