OBSOLETE 2N7002XFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS(ON) ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) • • • Load switching . • DFN1006-3 Top View Top View Equivalent Circuit Ordering Information (Note 3) Part Number 2N7002XFB-7 Notes: Case DFN1006-3 Packaging 3000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 2N7002XFB Document number: DS35449 Rev. 2 - 6 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2011 © Diodes Incorporated OBSOLETE 2N7002XFB Maximum Ratings Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 4) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Steady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 60 ±20 260 210 Units V V ID 400 310 mA Value 430 290 840 147 -55 to +150 Units mW °C/W mW °C/W °C mA Thermal Characteristics Characteristic Power Dissipation, @TA = 25°C (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation, @TA = 25°C (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Operating and Storage Temperature Range Symbol PD RθJA PD RθJSA TJ, TSTG . Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 0.1 ±10 V µA µA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.2 RDS (ON) - |Yfs| VSD 80 - 2.0 3.0 4.0 1.0 V Static Drain-Source On-Resistance 2.1 2.3 320 0.7 mS V VDS = VGS, ID = 250μA VGS = 10V, ID = 0.115A VGS =5V, ID = 0.1115A VDS = 10V, ID = 0.115A VGS = 0V, IS = 0.115A Ciss Coss Crss tD(on) tr tD(off) tf - 25 4,7 2.5 3.27 3.15 12.025 6.29 - pF pF pF ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, VGEN = 10V, RGEN = 25Ω,ID = 0.115A 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2N7002XFB Document number: DS35449 Rev. 2 - 6 2 of 5 www.diodes.com September 2011 © Diodes Incorporated OBSOLETE 2N7002XFB 0.6 1 VGS=10V 0.5 ID, DRAIN CURRENT (A) VGS=5.0V VGS=4.5V 0.3 VGS=2.5V 0.2 TA=25° C TA=-55°C T A=85°C 0.1 0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 0.01 0 5 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE Fig. 2 Typical Transfer Characteristics 4 2.4 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 0 4.5 4 3.5 3 VGS=5V 2.5 VGS=10V 2 1.5 1 0.5 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Charge 2.2 VGS=10V, ID=115mA 2 1.8 1.6 VGS=5V, ID=115mA 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 4 On-Resistance Variation with Temperature 0.6 2 50 1.8 45 CT, JUNCTION CAPACITANCE (pF) f=1MHz VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT TA=150°C VGS =3.0V VGS=4.0V 0.4 TA=125°C VDS= 5.0V VGS=3.5V 1.6 1.4 ID=1mA 1.2 ID=250µA 1 0.8 0.6 0.4 30 CISS 25 20 15 10 COSS CRSS 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature Document number: DS35449 Rev. 2 - 6 35 5 0.2 2N7002XFB 40 3 of 5 www.diodes.com 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE Fig. 6 Typical Junction Capacitance 25 September 2011 © Diodes Incorporated OBSOLETE 2N7002XFB 1 TA=125°C TA=25°C IS, SOURCE CURRENT (A) NEW PRODUCT TA=150°C 0.1 TA=85°C T A=-55°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 1.2 Package Outline Dimensions A DFN1006 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z 2N7002XFB Document number: DS35449 Rev. 2 - 6 4 of 5 www.diodes.com September 2011 © Diodes Incorporated OBSOLETE 2N7002XFB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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