DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: SOT323 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) • • DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc • • Drain SOT323 D Gate Top View ESD PROTECTED TO 1kV Gate Protection Diode S G Top View Pin Configuration Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN65D8LW-7 Notes: Case SOT323 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. MM3 Date Code Key Year Code Month Code 2011 Y Jan 1 YM Marking Information 2012 Z Feb 2 DMN65D8LW Document number: DS35639 Rev. 4 - 2 Mar 3 MM3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 5 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated DMN65D8LW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 300 230 ID mA 260 210 800 1 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 6) Units V V IDM IS mA mA A Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 300 432 398 290 142 -55 to +150 PD RθJA RθJC TJ, TSTG Units mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±5.0 V µA µA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) Static Drain-Source On-Resistance RDS (ON) gFS VSD 1.2 ⎯ ⎯ 80 - ⎯ 2 2.5 290 0.8 2.0 3 4 ⎯ 1.2 V Ω Ω mS V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.115A VGS = 5V, ID = 0.115A VDS = 10V, ID = 0.115A VGS = 0V, IS = 115mA Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 22.0 3.2 2.0 79.9 0.87 0.43 0.11 0.11 2.7 2.8 12.6 7.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 30V, ID = 150mA nS VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN65D8LW Document number: DS35639 Rev. 4 - 2 2 of 5 www.diodes.com July 2012 © Diodes Incorporated DMN65D8LW 1 0.6 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 0.4 0.3 0.2 0.1 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.1 TA = -55°C 0.01 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 0 2.4 4.5 2.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 5.0 4.0 3.5 3.0 VGS = 5V 2.5 2.0 VGS= 10V 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE-SOURCE VOLTAGE Figure 2 Typical Transfer Characteristics 2.0 VGS = 10 V ID = 115mA 1.8 1.6 VGS = 5V ID = 115mA 1.4 1.2 1.0 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT Figure 3 Typical On-Resistance vs. Drain Current and Temperature 0.4 50 0.6 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 4 On-Resistance Variation with Temperature 5 2.0 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 4 3 VGS = 5V ID = 115mA 2 VGS = 10V ID = 115mA 1 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN65D8LW Document number: DS35639 Rev. 4 - 2 1.8 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 Gate Threshold Variation vs. Ambient Temperature 3 of 5 www.diodes.com July 2012 © Diodes Incorporated DMN65D8LW 1,000 IDSS, DRAIN LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (V) 1 0.1 T A = 150°C TA = 85°C T A = 125°C 0.01 TA = 25°C T A = -55°C 0.001 0 100 TA = 150°C T A = 125°C 10 TA = -55°C TA = 25°C 1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 7 Diode Forward Voltage vs. Current 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 8 Typical Drain-Source Leakage Current vs. Voltage 50 10 f = 1MHz VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 45 40 35 30 25 Ciss 20 15 10 Coss 5 0 T A = 85°C Crss 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 25 9 VDS = 30V ID = 150mA 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 1.0 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K J DMN65D8LW Document number: DS35639 Rev. 4 - 2 M D L 4 of 5 www.diodes.com July 2012 © Diodes Incorporated DMN65D8LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C C E X 1.9 1.0 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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