DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • DC-DC Converters Power management functions • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain X2-DFN1006-3 Body Diode Gate S Gate Protection Diode Bottom View ESD PROTECTED D G Source Equivalent Circuit Top View Ordering Information (Note 3) Part Number DMN26D0UFB4-7 DMN26D0UFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMN26D0UFB4-7 DMN26D0UFB4-7B M1 M1 Top View Dot Denotes Drain Side Top View Bar Denotes Gate and Source Side DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 1 of 6 www.diodes.com M1 = Product Type Marking Code March 2012 © Diodes Incorporated DMN26D0UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.5V Steady State Continuous Drain Current (Note 4) VGS = 1.8V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Unit V V mA 180 140 805 ID Pulsed Drain Current - TP = 10µs Thermal Characteristics Value 20 ±10 240 190 IDM mA mA @TA = 25°C unless otherwise specified Total Power Dissipation (Note 4) @TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range 350 357 -55 to +150 PD RθJA TJ, TSTG mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS 20 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 500 ±1 ±100 μA nA VGS(th) 0.45 ⎯ 1.05 V 1.8 2.5 3.4 4.7 3.0 4.0 6.0 10.0 Ω |Yfs| VSD ⎯ ⎯ ⎯ ⎯ 180 0.5 242 ⎯ ⎯ 1.4 mS V Ciss Coss Crss ⎯ ⎯ ⎯ 14.1 2.9 1.6 ⎯ ⎯ ⎯ pF pF pF VDS = 15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 3.8 7.9 13.4 15.2 ⎯ ⎯ ⎯ ⎯ ns VGS = 4.5V, VDD = 10V ID = 200mA, RG = 2.0Ω RDS (ON) Test Condition VGS = 0V, ID = 100μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VDS = 10V, ID = 0.1A VGS = 0V, IS = 115mA 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Short duration pulse test used to minimize self-heating effect. DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 2 of 6 www.diodes.com March 2012 © Diodes Incorporated DMN26D0UFB4 0.4 0.8 VGS = 8V VDS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) 0.6 VGS = 3.0V 0.5 0.4 VGS = 2.5V 0.3 VGS = 2.0V 0.2 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = -55°C TA = 25°C TA = 85°C TA = 125°C 0.2 TA = 150°C 0.1 0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 4 3 VGS = 1.8V 2 VGS = 2.5V VGS = 4.5V 1 0.01 0 3 0.1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 4 VGS = 4.5V 3 TA = 150°C 2 TA = 125°C T A = 85°C TA = 25°C 1 TA = -55°C 0 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 4.0 1.8 3.5 1.6 VGS = 4.5V ID = 500mA RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.3 VGS = 1.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.7 1.4 VGS = 2.5V ID = 150mA 1.2 1.0 0.8 3.0 2.5 VGS = 2.5V ID = 150mA 2.0 1.5 VGS = 4.5V ID = 500mA 1.0 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 3 of 6 www.diodes.com 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature March 2012 © Diodes Incorporated 1.4 0.8 1.2 0.7 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) DMN26D0UFB4 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 0.2 0.6 TA = 25°C 0.5 0.4 0.3 0.2 0.1 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10,000 20 IDSS, LEAKAGE CURRENT (nA) f = 1MHz C, CAPACITANCE (pF) 15 Ciss 10 5 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 1 TA = 25°C Coss TA = -55°C Crss 0 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.1 0 20 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 278°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 March 2012 © Diodes Incorporated DMN26D0UFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN26D0UFB4 Document number: DS31775 Rev. 7 - 2 5 of 6 www.diodes.com March 2012 © Diodes Incorporated DMN26D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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