US1ABF THRU US1MBF Surface Mount Ultrafast Recovery Rectifier Reverse Voltage – 50V~1000 V Forward Current – 1.0 A SMBF Cathode Band Top View FEATURES 0.145(3.70) 0.137(3.50) • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz 0.217(5.50) 0.201(5.10) Maximum Ratings and Electrical characteristics Dimensions in inches and (millimeters) Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols Parameter US1ABF US1BBF US1DBF US1GBF US1JBF US1KBF US1MBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 75 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 35 A Maximum Instantaneous Forward Voltage at 1 A VF Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Ta = 25 °C Ta =125 °C 1） Maximum Reverse Recovery Time 2） Typical Thermal Resistance 3） Operating and Storage Temperature Range 1.3 1.0 1.5 V IR 5 50 μA Cj 45 pF t rr 50 RθJA 75 ns RθJL 85 25 °C/W T j , T stg -55 ~ +150 °C 1）Measured at 1 MHz and applied reverse voltage of 4 V D.C 2 ) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A 2 3）P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm ) copper pad areas. 1 US1ABF THRU US1MBF Surface Mount Ultrafast Recovery Rectifier Reverse Voltage – 50V~1000 V Forward Current – 1.0 A Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 100LFM I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 1.0 Lead Ambient 0.5 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 75 50 100 125 150 175 0 Ambient /Lead Temperature (°C) Peak Forward Surage Current (A) Instaneous Forward Current (A) T J =25°C pulse with 300μs 1% duty cycle 1.0 0.1 US1ABF~US1DBF US1GBF US1JBF~US1MBF 0.5 1.0 1.5 2.0 60 80 100 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 20 0.01 0.0 40 % of PIV.VOLTS Fig.3 Typical Instaneous Forward Characteristics 10 20 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 2.5 Instaneous Forward Voltage (V) 10 Number of Cycles 2 100