MB85R1002A

FUJITSU SEMICONDUCTOR
DS501-00004-5v1-J
DATA SHEET
FRAM
1M
(64 K×16)
MB85R1002A
■
MB85R1002A
× 16
MB85R1002A
MB85R1002A
E2PROM
MB85R1002A
,
CMOS
FRAM (Ferroelectric Random Access Memory :
, SRAM
/
,
SRAM
■
65,536
×16
LB,UB
/
1010 /
10 (
3.0 V
55 °C), 55 (
35 °C)
3.6 V
10 mA (Typ)
10
μA (Typ)
40 °C
85 °C
TSOP, 48 (FPT-48P-M48)
RoHS
Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED
2015.5
65,536
)
1010
,
MB85R1002A
■
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE2
VSS
UB
LB
VDD
NC
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
VSS
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
VDD
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
VSS
CE1
A0
(FPT-48P-M48)
■
2
1
8, 18
29
36, 38
25
45
A0
I/O1
A15
I/O16
26
CE1
1
12
CE2
2
11
WE
28
OE
14, 15
LB, UB
16, 37
VDD
13, 27, 46
VSS
9, 10, 17, 47, 48
NC
2
3
,
, VDD
VSS
DS501-00004-5v1-J
MB85R1002A
■
A0
FRAM
65,536×16
A15
intWE
intOE
CE2
CE1
WE
OE
LB
UB
I/O1 ~ I/O8
I/O9 ~ I/O16
I/O16
I/O9
I/O8
I/O1
DS501-00004-5v1-J
3
MB85R1002A
■
CE1
CE2
WE
OE
LB
UB
H
×
×
×
×
×
×
L
×
×
×
×
×
×
H
H
×
×
×
×
×
×
H
H
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
H
L
(
L
SRAM,
H
H
L
L
H
1
OE
)
H
L
(
WE
H
L
SRAM,
2
H : “H”
L
L
H
H
H
)
L: “L”
H
×:“H”, “L”,
I/O1
I/O8 I/O9
Hi-Z
I/O16
Hi-Z
(ISB)
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
(IDD)
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z:
,
1
2
4
OE
WE
SRAM
SRAM
, OE
, WE
DS501-00004-5v1-J
MB85R1002A
■
VSS = 0V
(
,
VDD
0.5
VIN
0.5
VDD
0.5 (
4.0)
V
VOUT
0.5
VDD
0.5 (
4.0)
V
TA
40
85
°C
TSTG
55
125
°C
,
V
4.0
)
,
,
■
VDD
1
TA
*2
1
2
3.0
3.3
40
⎯
3.6
V
°C
85
VSS = 0V
,
,
,
,
,
,
,
DS501-00004-5v1-J
5
MB85R1002A
■
1.
(
*1
*2
VDD
⎯
⎯
10
μA
0V
VDD,
VIH or OE
VIH
⎯
⎯
10
μA
⎯
10
15
mA
⎯
10
50
μA
|ILI|
VIN
|ILO|
VOUT
CE1
IDD
CE1
0.2 V, CE2
Iout
0 mA
ISB
)
0V
CE1
VDD
CE2
0.2 V
VDD
0.2 V,
0.2 V
OE
VDD
0.2 V, WE
VDD
0.2 V
LB
VDD
0.2 V, UB
VDD
0.2 V
“H”
VIH
VDD
3.0 V
3.6 V
VDD×0.8
⎯
VDD 0.5 (
4.0)
“L”
VIL
VDD
3.0 V
3.6 V
⎯
“H”
VOH
IOH
0.5
VDD×0.8
⎯
0.6
⎯
V
“L”
VOL
IOL
⎯
⎯
0.4
V
1
2
6
IDD
1.0 mA
2.0 mA
, Address, Data In
H VDD
1
0.2 V
L
0.2 V
1I
CMOS
out
V
V
,
DS501-00004-5v1-J
MB85R1002A
2.
3.0 V
3.6 V
40 °C
0.3 V
5 ns
5 ns
2.0 V / 0.8 V
2.0 V / 0.8 V
50 pF
85 °C
2.7 V
(1)
tRC
150
⎯
ns
CE1
tCA1
120
⎯
ns
CE2
tCA2
120
⎯
ns
OE
tRP
120
⎯
ns
LB, UB
tBP
120
⎯
ns
tPC
20
⎯
ns
OE
LB, UB
tAS
0
⎯
ns
tAH
50
⎯
ns
tES
0
⎯
ns
tBS
5
⎯
ns
tOH
0
⎯
ns
tLZ
30
⎯
ns
CE1
tCE1
⎯
100
ns
CE2
tCE2
⎯
100
ns
tOE
⎯
100
ns
tOHZ
⎯
20
ns
OE
(2)
tWC
150
⎯
ns
CE1
tCA1
120
⎯
ns
CE2
tCA2
120
⎯
ns
LB, UB
tBP
120
⎯
ns
tPC
20
⎯
ns
tAS
0
⎯
ns
tAH
50
⎯
ns
tBS
5
⎯
ns
tWP
120
⎯
ns
tDS
0
⎯
ns
tDH
50
⎯
ns
tWS
0
⎯
ns
LB, UB
DS501-00004-5v1-J
7
MB85R1002A
3.
CIN
COUT
8
VDD
VIN VOUT 0 V,
f
1 MHz, TA
25 °C
⎯
⎯
10
pF
⎯
⎯
10
pF
DS501-00004-5v1-J
MB85R1002A
■
1.
(CE
1
)
tRC
tCA1
tPC
CE1
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tES
tRP
OE
tCE1
tOH
tLZ
I/O1 ~ I/O16
tOHZ
Hi-Z
Valid
Invalid
Invalid
:H or L
2.
(CE2
)
CE1
tRC
tPC
tCA2
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tES
tRP
OE
tCE2
tOH
tLZ
I/O1 ~ I/O16
tOHZ
Hi-Z
Valid
Invalid
Invalid
:H or L
DS501-00004-5v1-J
9
MB85R1002A
3.
(OE
)
CE1
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tRC
tPC
tRP
OE
tOE
tOHZ
tOH
tLZ
I/O1 ~ I/O16
Hi-Z
Valid
Invalid
Invalid
:H or L
4.
(CE
1
)
tWC
tCA1
tPC
CE1
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tWS
tWP
WE
tDS
tDH
Hi-Z
Valid
Data In
H or L
:H or L
10
DS501-00004-5v1-J
MB85R1002A
5.
(CE2
)
CE1
tWC
tPC
tCA2
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tWS
tWP
WE
tDH
tDS
Hi-Z
Valid
Data In
H or L
:H or L
6.
)
(WE
CE1
CE2
tBS
tBP
LB, UB
tAS
A0 ~ A15
tAH
Valid
H or L
tWC
tWP
tPC
WE
tDS
tDH
Hi-Z
Data In
Valid
H or L
:H or L
DS501-00004-5v1-J
11
MB85R1002A
■
tPD
tR
tPU
VCC
VCC
CE2
CE2
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
CE2
0.2 V
0V
0V
CE1 > VCC × 0.8*
CE1 > VCC × 0.8*
CE1 : Don't Care
CE1
CE
OFF
ON
1 (Max)
CE1
VDD
0.5 V
CE1
CE1
tPD
85
⎯
⎯
ns
tPU
85
⎯
⎯
ns
tR
0.05
⎯
200
ms
,
,
,
IC
CE2
L
,
, CE1, CE2
■ FRAM
*1
/
1010
⎯
10
⎯
T
A
55 °C
55
⎯
T
A
35 °C
*2
1
2
FRAM
,
/
TA
85 °C
/
,
,
■
12
DS501-00004-5v1-J
MB85R1002A
■ ESD
DUT
ESD HBM(
JESD22-A114
2000 V
2000 V
)
ESD MM(
JESD22-A115
200 V
200 V
)
ESD CDM(
JESD22-C101
1000 V
1000 V
)
(
)
⎯
MB85R1002ANC-GE1
JESD78
(
)
⎯
JESD78
(
Proprietary method
)
(C-V
Proprietary method
)
(
300 mA
300 mA
⎯
)
A
VDD
IIN
) VIN
IIN
-
VSS
, IIN
±300 mA
, I/O
DS501-00004-5v1-J
VDD
(
)
V
VIN
(
+
DUT
300 mA
(
)
,
IIN
300 mA
,
13
MB85R1002A
(C-V
)
A
1
2
VDD
SW
DUT
+
V
VIN
-
(
) SW
2
1
,5
1
2
C
200pF
VDD
(
)
VSS
,
,5
,
■
JEDEC
, Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D)
■
, REACH
14
, EU RoHS
RoHS
DS501-00004-5v1-J
MB85R1002A
■
TSOP, 48
(FPT-48P-M48)
MB85R1002ANC-GE1
⎯*
,
DS501-00004-5v1-J
15
MB85R1002A
■
ࡊ࡜ࠬ࠴࠶ࠢ࡮TSOP, 48 ࡇࡦ
࡝࡯࠼ࡇ࠶࠴
0.50 mm
ࡄ࠶ࠤ࡯ࠫ᏷˜
ࡄ࠶ࠤ࡯ࠫ㐳ߐ
12.00 mm ˜ 12.40 mm
࡝࡯࠼ᒻ⁁
ࠟ࡞࠙ࠖࡦࠣ
ኽᱛᣇᴺ
ࡊ࡜ࠬ࠴࠶ࠢࡕ࡯࡞࠼
ขઃߌ㜞ߐ
1.20 mm Max.
⾰㊂
0.36 g
(FPT-48P-M48)
ᵈ 1㧕# ශኸᴺߩ࡟ࠫࡦᱷࠅߪ ஥ +0.15㧔.006㧕Max
ᵈ 2㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߹ߕ‫ޕ‬
ᵈ 3㧕┵ሶ᏷߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍ฽߻‫ޕ‬
ᵈ 4㧕┵ሶ᏷ߪ࠲ࠗࡃಾᢿᱷࠅࠍ฽߹ߕ‫ޕ‬
ࡊ࡜ࠬ࠴࠶ࠢ࡮TSOP, 48 ࡇࡦ
㧔FPT-48P-M48㧕
0.10±0.05 (.004±.002)
(STAND OFF)
1
48
0.50(.020)
INDEX
#12.00±0.10
(.472±.004)
+0.05
0.22 –0.04
(.009 +.002
–.002 )
24
0.10(.004)
M
25
1.13±0.07 (.044±.003)
(MOUNTING HEIGHT)
Details of A part
14.00±0.20(.551±.008)
*12.40±0.10(.488±.004)
0.25(.010)
+0.05
–0.03
+.002
–.001
0.145
(.006
C
16
)
0.08(.003)
2010 FUJITSU SEMICONDUCTOR LIMITED F48048Sc-1-1
A
0.60±0.15
(.024±.006)
0~8
න૏㧦mm 㧔inches㧕
ᵈᗧ㧦᜝ᒐౝߩ୯ߪෳ⠨୯ߢߔ‫ޕ‬
DS501-00004-5v1-J
MB85R1002A
■
[MB85R1002ANC-GE1]
JAPAN
MB85R1002A
1150 E00
E1
[FPT-48P-M48]
DS501-00004-5v1-J
17
MB85R1002A
■
1.
1.1
TSOP48, 56 (I)
/
128
/
/
1280
5120
322.6
315
15 × 19.0 = 285
15
15
8-NO HOLES
7.62
1.27
7 × 14.9 = 104.3
135.9
15.8
FPT-48P-M48
34.3
25.4
1
13.564
12.2
10
8
1.27
1
1 1
1
10
19
15.8
SEC.A-A
1 1
8
0.9
1.27
1
0.9
1.27
1.27
7.62
7.62
2
1.27
15.564
14.2
11.8
10
15
C
25.4
255.3
2
R4.7
5
B
A
0.76
C3
2.54
A
15.8
B
14.9
SEC.B-B
2002-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP (1) 12 × 14 : JHB-TS1-1214-1-D-3
mm
125 °C MAX
133 g
18
DS501-00004-5v1-J
MB85R1002A
1.2 IEC (JEDEC)
(IC)
Index mark
IC
*5
*5
*1*4*5
*5
*5
,
1
*5
*5
*5
*1*4*5
*5
) *2*3*5
(
*5
-A*4*5
-B*4*5
E1
1:
2:
3:
4:
5:
,
G
Pb
,
,
,
,
,
,
,
,
,
DS501-00004-5v1-J
19
MB85R1002A
1.3
[C-3
,
(20mm×100mm)]
(50mm×100mm)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
C-3
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0::::::::::::::
0:::::::::: ::::::
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
2#%-#)'%1706
ᪿ൮୘ᢙ
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
,
20
-A, B
DS501-00004-5v1-J
MB85R1002A
1.4
(1)
H
W
L
L
W
H
165
360
75
(
mm)
(2)
H
W
L
L
W
H
355
385
195
(
DS501-00004-5v1-J
mm)
21
MB85R1002A
■
,
1
SRAM
5
6
1.
“H”
“L”
“H”
“L”
14
16
22
DS501-00004-5v1-J
MB85R1002A
MEMO
DS501-00004-5v1-J
23
MB85R1002A
富士通セミコンダクター株式会社
0120-198-610
222-0033
2-100-45
:
9
17
(
,
)
PHS
http://jp.fujitsu.com/fsl/
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