FUJITSU SEMICONDUCTOR DS501-00003-5v1-J DATA SHEET FRAM 1M (128 K×8) MB85R1001A ■ MB85R1001A ×8 MB85R1001A MB85R1001A E2PROM MB85R1001A , CMOS FRAM (Ferroelectric Random Access Memory : , SRAM / , SRAM ■ / :131,072 ×8 :1010 / :10 ( 55 °C), 55 ( :3.0V~3.6V : 10 mA( 10 μA( : 40 °C 85 °C : TSOP,48 RoHS 35 °C) ) ) (FPT-48P-M48) Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5 131,072 ) 1010 , MB85R1001A ■ (TOP VIEW) A11 A9 NC A8 A13 WE CE2 A15 NC VDD NC NC VSS NC NC VDD NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 OE NC VSS A10 CE1 NC I/O8 I/O7 I/O6 I/O5 I/O4 VDD NC I/O3 I/O2 I/O1 NC NC NC A0 A1 VSS A2 A3 (FPT-48P-M48) ■ 1, 2, 4, 5, 8, 18 45 33 26, 28, 29, 35, 38 42 A16 I/O1 I/O8 44 CE1 1 7 CE2 2 6 WE 48 OE 10, 16, 37 VDD 13, 27, 46 VSS 3, 9, 11, 12, 14, 15, 17, 30 32, 36, 43, 47 2 A0 NC 3 3 , , VDD VSS DS501-00003-5v1-J MB85R1001A ■ A0 FRAM 131,072×8 A16 intWE intOE CE2 CE1 WE OE DS501-00003-5v1-J I/O1 ~ I/O8 I/O8 I/O1 3 MB85R1001A ■ CE1 CE2 WE OE H × × × × L × × × × H H H L I/O1 I/O8 Hi-Z (ISB) H L ( SRAM, OE 1 ) L H H (IDD) H L H L ( SRAM, WE H : “H” 2 ) , L“L” L H , דH”, “L”, : 1 OE 2 WE 4 H , Hi-Z , SRAM SRAM , : ,OE ,WE DS501-00003-5v1-J MB85R1001A ■ * VDD 0.5 * VIN 0.5 VDD 0.5 ( 4.0) V * VOUT 0.5 VDD 0.5 ( 4.0) V TA 40 85 °C TSTG 55 125 °C 3.6 V VSS ( V 4.0 0V , , ) , , ■ VDD *1 TA *2 1 2 VSS 3.0 3.3 40 ⎯ °C 85 0V , , , , , , , DS501-00003-5v1-J 5 MB85R1001A ■ 1. ( *1 * 2 VDD ⎯ ⎯ 10 μA 0V VDD, VIH or OE VIH ⎯ ⎯ 10 μA ⎯ 10 15 mA ⎯ 10 50 μA VDD×0.8 ⎯ VDD 0.5 ( 4.0) V |ILI| VIN |ILO| VOUT CE1 IDD CE1 0.2 V, CE2 Iout 0 mA ISB 0V CE1 VDD CE2 0.2 V OE VDD 0.2 V, WE VIH VDD 3.0 V 3.6 V “L” VIL VDD 3.0 V 3.6 V “H” VOH IOH “L” VOL IOL 6 IDD VDD 0.2 V, 0.2 V “H” 1 2 VDD 0.2 V 2.0 mA 1 0.2 V ⎯ 0.5 1.0 mA , Address, Data In , H VDD ) L 0.2 V 1I CMOS 0.6 V VDD×0.8 ⎯ ⎯ V ⎯ ⎯ 0.4 V out , DS501-00003-5v1-J MB85R1001A 2. 3.0 V 3.6 V 40 °C 0.3 V 5 ns 5 ns 2.0 V / 0.8 V 2.0 V / 0.8 V 50 pF 85 °C 2.7 V (1) tRC 150 ⎯ ns CE1 tCA1 120 ⎯ ns CE2 tCA2 120 ⎯ ns OE tRP 120 ⎯ ns tPC 20 ⎯ ns OE tAS 0 ⎯ ns tAH 50 ⎯ ns tES 0 ⎯ ns tOH 0 ⎯ ns tLZ 30 ⎯ ns CE1 tCE1 ⎯ 100 ns CE2 tCE2 ⎯ 100 ns OE tOE ⎯ 100 ns tOHZ ⎯ 20 ns (2) tWC 150 ⎯ ns CE1 tCA1 120 ⎯ ns CE2 tCA2 120 ⎯ ns tPC 20 ⎯ ns tAS 0 ⎯ ns tAH 50 ⎯ ns tWP 120 ⎯ ns tDS 0 ⎯ ns tDH 50 ⎯ ns tWS 0 ⎯ ns DS501-00003-5v1-J 7 MB85R1001A 3. CIN COUT 8 VDD VIN VOUT f 1 MHz, TA 25 0 V, °C ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF DS501-00003-5v1-J MB85R1001A ■ 1. (CE 1 ) tRC tCA1 tPC CE1 CE2 tAS A0 ~ A16 tAH Valid H or L tES tRP OE tCE1 tOH tLZ I/O1 ~ I/O8 tOHZ Hi-Z Valid Invalid Invalid :H or L 2. (CE2 ) CE1 tRC tPC tCA2 CE2 tAS A0 ~ A16 tAH Valid H or L tES tRP OE tCE2 tOH tLZ I/O1 ~ I/O8 tOHZ Hi-Z Valid Invalid Invalid :H or L DS501-00003-5v1-J 9 MB85R1001A 3. (OE ) CE1 CE2 tAS A0 ~ A16 tAH Valid H or L tRC tPC tRP OE tOE tOHZ tOH tLZ I/O1 ~ I/O8 Hi-Z Valid Invalid Invalid :H or L 4. (CE 1 ) tWC tCA1 tPC CE1 CE2 tAS A0 ~ A16 tAH Valid H or L tWS tWP WE tDS tDH Hi-Z Valid Data In H or L :H or L 10 DS501-00003-5v1-J MB85R1001A 5. (CE2 ) CE1 tWC tPC tCA2 CE2 tAS A0 ~ A16 tAH Valid H or L tWS tWP WE tDS tDH Hi-Z Valid Data In H or L :H or L ) 6. (WE CE1 CE2 tAS A0 ~ A16 tAH Valid H or L tWC tWP tPC WE tDS tDH Hi-Z Data In Valid H or L :H or L DS501-00003-5v1-J 11 MB85R1001A ■ tPD tR tPU VDD VDD CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 0.2 V 0V 0V CE1 > VDD × 0.8* CE1 > VDD × 0.8* CE1 : Don't Care CE1 CE OFF ON 1 (Max) CE1 VDD 0.5 V CE1 CE1 tPD 85 ⎯ ⎯ ns tPU 85 ⎯ ⎯ ns tR 0.05 ⎯ 200 ms , , , IC CE2 L , , CE1, CE2 ■ FRAM *1 / 1010 ⎯ 10 ⎯ T A 55 °C 55 ⎯ T A 35 °C *2 1 2 FRAM , / TA 85 °C / , , ■ 12 DS501-00003-5v1-J MB85R1001A ■ ESD DUT ESD HBM( JESD22-A114 2000 V 2000 V ) ESD MM( JESD22-A115 200 V 200 V ) ESD CDM( JESD22-C101 1000 V 1000 V ) ( ) ⎯ MB85R1001ANC-GE1 JESD78 ( ) ⎯ JESD78 ( Proprietary method ) (C-V Proprietary method ) ( 300 mA 300 mA ⎯ ) A VDD IIN ) VIN IIN - VSS , IIN ±300 mA , I/O DS501-00003-5v1-J VDD ( ) V VIN ( + DUT 300 mA ( ) , IIN 300 mA , 13 MB85R1001A (C-V ) A 1 2 VDD SW DUT + V VIN - ( ) SW 2 1 ,5 1 2 C 200pF VDD ( ) VSS , ,5 , ■ JEDEC , Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D) ■ , REACH 14 , EU RoHS RoHS DS501-00003-5v1-J MB85R1001A ■ TSOP, 48 (FPT-48P-M48) MB85R1001ANC-GE1 ⎯* , DS501-00003-5v1-J 15 MB85R1001A ■ ࡊࠬ࠴࠶ࠢTSOP, 48 ࡇࡦ ࠼ࡇ࠶࠴ 0.50 mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 12.00 mm 12.40 mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 1.20 mm Max. ⾰㊂ 0.36 g (FPT-48P-M48) ᵈ 1㧕# ශኸᴺߩࠫࡦᱷࠅߪ +0.15㧔.006㧕Max ᵈ 2㧕* ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ ࡊࠬ࠴࠶ࠢTSOP, 48 ࡇࡦ 㧔FPT-48P-M48㧕 0.10±0.05 (.004±.002) (STAND OFF) 1 48 0.50(.020) INDEX #12.00±0.10 (.472±.004) +0.05 0.22 –0.04 (.009 +.002 –.002 ) 24 0.10(.004) M 25 1.13±0.07 (.044±.003) (MOUNTING HEIGHT) Details of A part 14.00±0.20(.551±.008) *12.40±0.10(.488±.004) 0.25(.010) +0.05 –0.03 +.002 –.001 0.145 (.006 C 16 ) 0.08(.003) 2010 FUJITSU SEMICONDUCTOR LIMITED F48048Sc-1-1 A 0.60±0.15 (.024±.006) 0~8 න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ DS501-00003-5v1-J MB85R1001A ■ [MB85R1001ANC-GE1] JAPAN MB85R1001A 1150 E00 E1 [FPT-48P-M48] DS501-00003-5v1-J 17 MB85R1001A ■ 1. 1.1 TSOP48, 56 (I) / 128 / / 1280 5120 322.6 315 15 × 19.0 = 285 15 15 8-NO HOLES 7.62 1.27 7 × 14.9 = 104.3 135.9 15.8 FPT-48P-M48 34.3 25.4 1 13.564 12.2 10 8 1.27 1 1 1 1 10 19 15.8 SEC.A-A 1 1 8 0.9 1.27 1 0.9 1.27 1.27 7.62 7.62 2 1.27 15.564 14.2 11.8 10 15 C 25.4 255.3 2 R4.7 5 B A 0.76 C3 2.54 A 15.8 B 14.9 SEC.B-B 2002-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP (1) 12 × 14 : JHB-TS1-1214-1-D-3 mm 125 °C MAX 133 g 18 DS501-00003-5v1-J MB85R1001A 1.2 IEC (JEDEC) (IC) Index mark IC *5 *5 *1*4*5 *5 *5 , 1 *5 *5 *5 *1*4*5 *5 ) *2*3*5 ( *5 -A*4*5 -B*4*5 E1 1: 2: 3: 4: 5: , G Pb , , , , , , , , , DS501-00003-5v1-J 19 MB85R1001A 1.3 [C-3 , (20mm×100mm)] (50mm×100mm) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: , 20 -A, B DS501-00003-5v1-J MB85R1001A 1.4 (1) H W L L W H 165 360 75 ( mm) (2) H W L L W H 355 385 195 ( DS501-00003-5v1-J mm) 21 MB85R1001A ■ , 1 SRAM 5 6 1. “H” “L” “H” “L” 14 16 22 DS501-00003-5v1-J MB85R1001A MEMO DS501-00003-5v1-J 23 MB85R1001A 富士通セミコンダクター株式会社 0120-198-610 222-0033 2-100-45 : 9 17 ( , ) PHS http://jp.fujitsu.com/fsl/ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,