MB85R256F

FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00011-8v2-E
Memory FRAM
256 K (32 K × 8) Bit
MB85R256F
■ DESCRIPTIONS
The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R256F uses a pseudo - SRAM interface.
■ FEATURES
Bit configuration
: 32,768 words × 8 bits
Read/write endurance
: 1012 times / byte
Data retention
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
Operating power supply voltage : 2.7 V to 3.6 V
Low power consumption
: Operating power supply current 5 mA (Typ)
Standby current 5 μA (Typ)
• Operation ambient temperature range: − 40 °C to + 85 °C
• Package
: 28-pin plastic SOP (FPT-28P-M17)
28-pin plastic SOP (FPT-28P-M01)
: 28-pin plastic TSOP(1) (FPT-28P-M19)
Both are RoHS compliant
•
•
•
•
•
Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED
2015.5
MB85R256F
■ PIN ASSIGNMENTS
(TOP VIEW)
A14
1
28
VDD
A12
2
27
WE
A7
3
26
A13
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE
A2
8
21
A10
A1
9
20
CE
A0
10
19
I/O7
I/O0
11
18
I/O6
I/O1
12
17
I/O5
I/O2
13
16
I/O4
GND
14
15
I/O3
(FPT-28P-M17 / FPT-28P-M01)
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
(FPT-28P-M19)
2
DS501-00011-8v2-E
MB85R256F
■ PIN FUNCTIONAL DESCRIPTIONS
Pin no.
Pin name
1 to 10, 21, 23 to 26
A0 to A14
11 to 13, 15 to 19
I/O0 to I/O7
Data input/output pins
20
CE
Chip enable input pin
27
WE
Write Enable input pin
22
OE
Output enable input pin
28
VDD
Supply Voltage pin
14
GND
Ground pin
DS501-00011-8v2-E
Functional description
Address input pins
3
MB85R256F
■ BLOCK DIAGRAM
A10 to A14
Block decoder
A0 to A14
Address
latch
A0 to A7
Row
decoder
FRAM array:
32,768 × 8
WE
OE
Pseudo-SRAM interface logic
circuit
CE
A8, A9
Column decoder
Control logic
I/O latch bus
driver
I/O0 to
I/O0-I/O7
I/O7
■ FUNCTION LIST
Operation mode
Standby precharge
CE
WE
OE
H
×
×
×
L
L
×
H
H
H
L
L
H
I/O0 to I/O7
Power supply current
Hi-Z
Standby
(ISB)
⎯
⎯
L
Latch address
Write
L
L
H
Data input
Read
L
H
L
Data output
H: High level, L: Low level, × : can be either H, L,
at falling edge
4
or
, Hi-Z: High impedance,
Operation (IDD)
: Latch address
DS501-00011-8v2-E
MB85R256F
■ ABSOLUTE MAXIMUM RANGES
Parameter
Rating
Symbol
Min
Max
Unit
Power supply voltage*
VDD
− 0.5
+ 4.0
V
Input voltage*
VIN
− 0.5
VDD + 0.5
V
VOUT
− 0.5
VDD + 0.5
V
TA
− 40
+ 85
°C
Tstg
− 55
+ 125
°C
Output voltage*
Operation ambient temperature
Storage temperature
* : These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Power supply voltage*1
VDD
2.7
3.3
3.6
V
Operation ambient temperature*2
TA
− 40
⎯
+ 85
°C
*1 : These parameters are based on the condition that VSS is 0 V.
*2 : Ambient temperature when only this device is working. Please consider it to be the almost same as the
package surface temperature.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS501-00011-8v2-E
5
MB85R256F
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Min
Typ
Max
Unit
Input leakage current
| ILI |
VIN = 0 V to VDD
⎯
⎯
10
μA
Output leakage
current
| ILO |
VOUT = 0 V to VDD,
CE = VIH or OE = VIH
⎯
⎯
10
μA
Operating power
supply current*1
IDD
CE = 0.2 V,
Other inputs = VDD − 0.2 V/0.2 V,
tRC (Min), Iout = 0 mA
⎯
5
10
mA
Standby current*2
ISB
CE, WE, OE ≥ VDD
⎯
5
50
μA
High level input voltage
VIH
VDD = 2.7 V to 3.6 V
VDD × 0.8
⎯
VDD + 0.5
( ≤ 4.0)
V
Low level input voltage
VIL
VDD = 2.7 V to 3.6 V
− 0.5
⎯
+ 0.6
V
High level output
voltage
VOH
IOH = − 2.0 mA
VDD × 0.8
⎯
⎯
V
Low level output
voltage
VOL
IOL = 2.0 mA
⎯
⎯
0.4
V
*1: During the measurement of IDD, the Address and Data In were taken to only change once per active cycle.
Iout: output current
*2: All pins other than setting pins shall be input at the CMOS level voltages such as H ≥ VDD, L ≤ 0 V.
6
DS501-00011-8v2-E
MB85R256F
2. AC Characteristics
• AC Characteristics Test Condition
Power supply voltage
: 2.7 V to 3.6 V
Operation ambient temperature: − 40 °C to + 85 °C
Input voltage amplitude
: 0.3 V to 2.7 V
Input rising time
: 10 ns
Input falling time
: 10 ns
Input evaluation level
: VDD/2
Output evaluation level
: VDD/2
Output Load Capacitance: 100 pF
(1) Read cycle
Parameter
Symbol
Value
Min
Max
Read cycle time
tRC
150
⎯
CE active time
tCA
70
500
Read pulse width
tRP
70
500
Precharge time
tPC
80
⎯
Address setup time
tAS
0
⎯
Address hold time
tAH
25
⎯
CE access time
tCE
⎯
70
OE access time
tOE
⎯
70
CE output floating time
tHZ
⎯
25
OE output floating time
tOHZ
⎯
25
Unit
ns
(2) Write cycle
Parameter
Symbol
Value
Min
Max
Write cycle time
tWC
150
⎯
CE active time
tCA
70
500
Write pulse width
tWP
70
500
Precharge time
tPC
80
⎯
Address setup time
tAS
0
⎯
Address hold time
tAH
25
⎯
Data setup time
tDS
50
⎯
Data hold time
tDH
0
⎯
DS501-00011-8v2-E
Unit
ns
7
MB85R256F
3. Pin Capacitance
Parameter
Input capacitance
Output capacitance
8
Symbol
CIN
COUT
Conditions
VDD = VIN = VOUT = 0 V,
f = 1 MHz, TA = + 25 °C
Value
Unit
Min
Typ
Max
⎯
⎯
10
pF
⎯
⎯
10
pF
DS501-00011-8v2-E
MB85R256F
■ TIMING DIAGRAM
1. Read cycle (CE Control)
tRC
tPC
tPC
tCA
CE
tAH
tAS
A0 to A14
tAS
tAH
Valid
Valid
OE
I/O0 to I/O7
High-Z
Valid
High-Z
Valid
tHZ
tCE
WE
“H” level
: Don't care
2. Read cycle (OE Control)
CE
tAH
tAS
A0 to A14
tAS
tAH
Valid
Valid
tRC
tPC
OE
tPC
tRP
tOE
I/O0 to I/O7
tOHZ
High-Z
Valid
WE
Valid
High-Z
“H” level
: Don't care
DS501-00011-8v2-E
9
MB85R256F
3. Write cycle (CE Control)
tWC
tPC
tPC
tCA
CE
tAS
tAS
tAH
Valid
Valid
A0 to A14
tAH
WE
tDS
tDS
tDH
Valid
Valid
Data In
tDH
OE
“H” level
: Don't care
4. Write cycle (WE Control)
CE
tAS
A0 to A14
tAS
tAH
Valid
tWC
tPC
tPC
tWP
WE
tDS
Data In
tAH
Valid
tDS
tDH
tDH
Valid
Valid
OE
“H” level
: Don't care
10
DS501-00011-8v2-E
MB85R256F
■ POWER ON/OFF SEQUENCE
tpd
tr
tpu
VDD
VDD
2.7 V
2.7 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
CE > VDD × 0.8*
CE > VDD × 0.8*
CE : Don't care
CE
CE
* : CE (Max) < VDD + 0.5 V
Parameter
Value
Symbol
Min
Typ
Max
Unit
CE level hold time at power OFF
tpd
80
⎯
⎯
ns
CE level hold time at power ON
tpu
80
⎯
⎯
ns
tr
0.05
⎯
200
ms
Power supply rising time
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Item
Min
Max
Read/Write Endurance*1
1012
⎯
Times/byte Operation Ambient Temperature TA = + 85 °C
10
⎯
Operation Ambient Temperature TA = + 85 °C
95
⎯
≥ 200
⎯
2
Data Retention*
Unit
Years
Parameter
Operation Ambient Temperature TA = + 55 °C
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTES ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
DS501-00011-8v2-E
11
MB85R256F
■ ESD AND LATCH-UP
Test
DUT
Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
≥ |2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant
≥ |200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant
≥ |1000 V|
Latch-Up (I-test)
JESD78 compliant
MB85R256FPF-G-BNDE1
MB85R256FPFCN-G-BNDE1
Latch-Up (Vsupply overvoltage test)
JESD78 compliant
⎯
⎯
Latch-Up (Current Method)
Proprietary method
≥ |300 mA|
Latch-Up (C-V Method)
Proprietary method
⎯
• Current method of Latch-Up Resistance Test
Protection Resistor
A
Test terminal
IIN
VIN
VDD
+
DUT
-
VSS
VDD
(Max.Rating)
V
Reference
terminal
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN = ± 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
12
DS501-00011-8v2-E
MB85R256F
• C-V method of Latch-Up Resistance Test
Protection Resistor
A
1
Test
2 terminal
SW
+
VIN
V
-
C
200pF
VDD
DUT
VDD
(Max.Rating)
VSS
Reference
terminal
Note : Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is
considered as one cycle.
Repeat this process 5 times. However, if the latch-up condition occurs before completing 5 times, this
test must be stopped immediately.
■ REFLOW CONDITIONS AND FLOOR LIFE
[ JEDEC MSL ] : Moisture Sensitivity Level 3 (ISP/JEDEC J-STD-020D)
■ CURRENT STATUS ON CONTAINED RESTRICTED SUBSTANCES
This product complies with the regulations of REACH Regulations, EU RoHS Directive and China RoHS.
DS501-00011-8v2-E
13
MB85R256F
■ ORDERING INFORMATION
Package
Shipping form
Minimum shipping
quantity
28-pin plastic SOP
(FPT-28P-M17)
Tube
⎯*
MB85R256FPFCN-G-BNDE1
28-pin plastic TSOP(1)
(FPT-28P-M19)
Tray
⎯*
MB85R256FPF-G-BND-ERE1
28-pin plastic SOP
(FPT-28P-M17)
Embossed carrier tape
1000
MB85R256FPNF-G-JNE2
28-pin plastic SOP
(FPT-28P-M01)
Tube
⎯*
MB85R256FPNF-G-JNERE2
28-pin plastic SOP
(FPT-28P-M01)
Embossed carrier tape
1000
Part number
MB85R256FPF-G-BNDE1
*: Please contact our sales office about minimum shipping quantity.
14
DS501-00011-8v2-E
MB85R256F
■ PACKAGE DIMENSIONS
28-pin plastic SOP
Lead pitch
1.27 mm
Package width ×
package length
8.6 × 17.75 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
2.80 mm MAX
Weight
0.82 g
Code
(Reference)
P-SOP28-8.6×17.75-1.27
(FPT-28P-M17)
28-pin plastic SOP
(FPT-28P-M17)
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+0.25
+.010
+0.03
*1 17.75 –0.20 .699 –.008
0.17 –0.04
+.001
.007 –.002
15
28
11.80±0.30
(.465±.012)
*2 8.60±0.20
INDEX
(.339±.008)
Details of "A" part
2.65±0.15
(Mounting height)
(.104±.006)
0.25(.010)
1
1.27(.050)
14
0.47±0.08
(.019±.003)
0.13(.005)
"A"
0~8°
M
0.80±0.20
(.031±.008)
0.88±0.15
(.035±.006)
0.20±0.15
(.008±.006)
(Stand off)
0.10(.004)
C
2002-2010 FUJITSU SEMICONDUCTOR LIMITED F28048S-c-3-6
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
(Continued)
DS501-00011-8v2-E
15
MB85R256F
28-pin plastic SOP
(FPT-28P-M01)
28-pin plastic SOP
(FPT-28P-M01)
Lead pitch
1.27 mm
Package width ×
package length
7.6 × 17.75 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
2.80 mm MAX
Weight
0.67 g
Code
(Reference)
P-SOP28-7.6×17.75-1.27
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+0.25
+.010
+0.03
*1 17.75 –0.20 .699 –.008
0.17 –0.04
+.001
.007 –.002
28
15
*2 7.60±0.30 10.20±0.40
(.299±.012) (.402±.016)
INDEX
Details of "A" part
+0.25
2.55 –0.15
+.010
.100 –.006
(Mounting height)
0.25(.010)
1
14
1.27(.050)
0.47±0.08
(.019±.003)
0.13(.005)
"A"
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
+0.10
0.10 –0.05
+.004
.004 –.002
(Stand off)
0.10(.004)
C
2002-2009 FUJITSU MICROELECTRONICS LIMITED F28005S-c-7-8
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
(Continued)
16
DS501-00011-8v2-E
MB85R256F
(Continued)
28-pin plastic TSOP (1)
Lead pitch
0.55 mm
Package width ×
package length
11.80 × 8.00 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.20 mm Max
Weight
Approx. 0.25 g
Code
(Reference)
P-TSOP(1)28-11.8×8-0.55
(FPT-28P-M19)
28-pin plastic TSOP (1)
(FPT-28P-M19)
21
22
28
LEAD No.
INDEX
1
7
8
0.15±0.05
(.006±.002)
13.40±0.20
(.528±.008)
11.80±0.20
(.465±.008)
8.00±0.20
(.315±.008)
0.55(.0217)
TYP
0.10(.004)
12.40±0.20
(.488±.008)
C
2005-2010 FUJITSU SEMICONDUCTOR LIMITED F28062S-c-3-5
DS501-00011-8v2-E
0.50±0.10
(.020±.004)
7.15(.281)
REF
0.20±0.10
(.008±.004)
0.00(.000) Min
(Stand off)
+0.10
+.004
1.10 –0.05 .043 –.002
(Mounting height)
0.09(.004)
M
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
17
MB85R256F
■ MARKING
[MB85R256FPF-G-BNDE1]
[MB85R256FPF-G-BND-ERE1]
JAPAN
MB85R256F
1150 E00
E1
[FPT-28P-M17]
[MB85R256FPNF-G-JNE2]
[MB85R256FPNF-G-JNERE2]
CHINA
MB85R256F
1200 300
E2
[FPT-28P-M01]
18
DS501-00011-8v2-E
MB85R256F
[MB85R256FPFCN-G-BNDE1]
JAPAN
MB85R256F
1150 E00
E1
[FPT-28P-M19]
DS501-00011-8v2-E
19
MB85R256F
■ PACKING INFORMATION
1. Tube
1.1 Tube Dimensions
• Tube/stopper shape
Tube
Transparent polyvinyl chloride
(treated to antistatic)
Stopper
(treated to antistatic)
Tube length: 520 mm
Tube cross-sections and Maximum quantity
Package form
Package code
FPT-28P-M17
SOP, 28, plastic
Maximum quantity
pcs/tube pcs/inner box pcs/outer box
28
2240
8960
0.6
(6.8)
8.0
14.4
15.6
1.6 2.0
3.2
5.4
(10.6)
9.4
©2002-2010 FUJITSU SEMICONDUCTOR LIMITED
CF28011-SET1:FJ99L-0018-E0010-1-K-3
2002 FUJITSU LIMITED F28011-SET1:FJ99L-0018-E0010-1-K-1
t = 0.6
Transparent polyvinyl chloride
(Dimensions
20
in mm)
DS501-00011-8v2-E
MB85R256F
1.2 TUBE Dry pack packing specifications
IC
Tube
Stopper
For SOP
Index mark
Label I *1*3
Aluminum Iaminated bag
Heat seal
Dry pack
Desiccant
Humidity indicator
Aluminum Iaminated bag
(tubes inside)
Inner box
Cushioning material
Inner box
Label I
*1*3
Cushioning material
Outer box*2
Outer box
Use adhesive tapes.
Label II-A *3
Label II-B *3
*1: For a product of witch part number is suffixed with "E1", a " G
bag and the inner boxes.
Pb
" marks is display to the moisture barrier
*2: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*3: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributor.
DS501-00011-8v2-E
21
MB85R256F
1.3 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
22
DS501-00011-8v2-E
MB85R256F
1.4 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
L
W
H
540
125
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
565
270
180
(Dimensions in mm)
DS501-00011-8v2-E
23
MB85R256F
2. Tray
2.1 Tray Dimensions
TSOP28(I)
Maximum storage capacity
PKG code
FPT-28P-M19
pcs/tray
pcs/inner box
pcs/outer box
128
1280
5120
322.6
315
19 × 15 = 285
7.62
1.27
15
B
B
A
34.3
25.4
8-NO HOLES
255.3
15
25.4
15.8
19
14.9
8.2
5
11
SEC. A-A
C
1
5
0.85
7.62
1.27
9.5
0.85
1.27
7.62
1
2
1
13.7
9.5
1
1.27
1.27
R4.75
2
C3
0.76
A
2.54
15.8
135.9
14.9 × 7 = 104.3
15.8
15
SEC. B-B
2005-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP I 8 × 13.4F : JHB-TS1-0813F-1-D-3
(Dimensions in mm)
Material : Conductive polyphenyleneether
Heat proof temperature : 150 °C Max
Weight : 136 g
24
DS501-00011-8v2-E
MB85R256F
2.2 IEC (JEDEC) TRAY Dry Pack Packing Specifications
Product (IC)
IC
Tray
Index mark
Chamfered corner
Tray
*5
Humidity
indicator
Desiccant *5
Label I *1*4*5
*5
Dry pack
↓
Inner box
Heat seal
Binding band
or tape
Aluminum laminated bag *5
Filled tray + one empty tray
Cushioning material *5
Inner box *5
*5
Binding band
or tape
Label I *1*4*5
Cushioning material *5
Outer box
Outer box *2*3*5
Use adhesive tapes. *5
Label II-A *4*5
Label II-B *4*5
*1: For a product of witch part number is suffixed with "E1", a " G
bag and the inner boxes.
Pb
" marks is display to the moisture barrier
*2: The size of the outer box may be changed depending on the quantity of inner boxes.
*3: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*4: Please refer to an attached sheet about the indication label.
*5: The packing materials except tray may differ slightly from the color and dimensions depend on country of
manufacture.
Note: The packing specifications may not be applied when the product is delivered via a distributor.
DS501-00011-8v2-E
25
MB85R256F
2.3 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
26
DS501-00011-8v2-E
MB85R256F
2.4 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
L
W
H
165
360
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
355
385
195
(Dimensions in mm)
DS501-00011-8v2-E
27
MB85R256F
3. Tape
3.1 Tape Dimensions
Maximum storage capacity
Reel No
pcs/outer box
1000
5000
2±0.1
4±0.1
16±0.1
ø1.5 +0.1
–0
11.5±0.1
B
A
ø2 +0.1
–0
A
8
pcs/inner box
1000
18.2±0.1
7
24 +0.3
–0.1
FPT-28P-M17
pcs/reel
1.75±0.1
PKG code
0.3±0.05
B
12.4±0.1
7
2.8
3.1
3.3±0.1
SEC.B-B
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED F028011EELS-F : FJ990-0010-X0528-1-S-1
(Dimensions in mm)
Material : Plant origin, conductive tape
Heat proof temperature : No heat resistance.
Package should not be baked
by using tape and reel.
28
DS501-00011-8v2-E
MB85R256F
3.2 IC orientation
Index mark
• ER type
(User Direction of Feed)
(Reel side)
(User Direction of Feed)
3.3 Reel dimensions
Reel cutout dimensions
E
∗
D
C
B
A
W1
W2
r
W3
∗:
Hub unit width dimensions
Reel No
1
2
3
4
5
6
7
Tape width
8
12
16
24
Symbol
A
254 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2
9
32
10
11
44
12
13
56
12
Dimensions in mm
14
15
16
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100 ± 2
C
13 ± 0.2
13 +0.5
-0.2
D
21 ± 0.8
20.5 +1
-0.2
E
24
330 ± 2
100 +2
-0
100 +2
-0
B
8
2 ± 0.5
W1
8.4 +2
-0
12.4 +2
-0
W2
less than
14.4
less than 18.4
less than 22.4
less than 30.4
less than 38.4
less than 50.4
less than
62.4
less than
18.4
less than
22.4
less than
30.4
W3
7.9 ~ 10.9
11.9 ~ 15.4
15.9 ~ 19.4
23.9 ~ 27.4
31.9 ~ 35.4
43.9 ~ 47.4
55.9 ~
59.4
12.4 ~
14.4
16.4 ~
18.4
24.4 ~
26.4
r
DS501-00011-8v2-E
16.4 +2
-0
24.4 +2
-0
32.4 +2
-0
44.4 +2
-0
+0.1
56.4 +2
12.4 +1
16.4 +1
-0
-0
-0 24.4 -0
1.0
29
MB85R256F
3.4 Taping (φ330mm Reel) Dry Pack Packing Specifications
Outside diameter: φ 254mm reel
Label I *1, *4
Embossed
tapes
Label I *1, *4
Desiccant
Humidity indicator
Aluminum laminated bag
Dry pack
Heat seal
Label I *1, *4
Inner box
Inner box
Taping
Label I *1, *4
Taping
Outer box *2, *3
Outer box
Use adhesive tapes.
Label II-A *4
Label II-B *4
*1: For a product of witch part number is suffixed with “E1”, a “ G
bag and the inner boxes.
Pb
” marks is display to the moisture barrier
*2: The size of the outer box may be changed depending on the quantity of inner boxes.
*3: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*4: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributor.
30
DS501-00011-8v2-E
MB85R256F
3.5 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
DS501-00011-8v2-E
31
MB85R256F
3.6 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
Tape width
L
W
H
12, 16
24, 32
44
40
365
50
345
65
56
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
415
400
315
(Dimensions in mm)
32
DS501-00011-8v2-E
MB85R256F
■ MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page
Section
Change Results
1
■ DESCRIPTIONS
Deleted the “compatible with conventional asynchronous
SRAM”.
5
■ RECOMMENDED OPERATING
CONDITIONS
Added note on the Operation Ambient Temperature.
Moved the “High Level Input Voltage” and “Low Level
Input Voltage” to DC Characteristics.
1. DC Characteristics
Moved the “High Level Input Voltage” and “Low Level
Input Voltage” from RECOMMENDED OPERATING
CONDITIONS.
■ CURRENT STATUS ON
CONTAINED RESTRICTED
SUBSTANCES
Deleted the URL info.
6
13
DS501-00011-8v2-E
33
MB85R256F
MEMO
34
DS501-00011-8v2-E
MB85R256F
MEMO
DS501-00011-8v2-E
35
MB85R256F
FUJITSU SEMICONDUCTOR LIMITED
Shin-Yokohama Chuo Building, 2-100-45 Shin-Yokohama,
Kohoku-ku, Yokohama, Kanagawa 222-0033, Japan
http://jp.fujitsu.com/fsl/en/
All Rights Reserved.
FUJITSU SEMICONDUCTOR LIMITED, its subsidiaries and affiliates (collectively, "FUJITSU SEMICONDUCTOR") reserves
the right to make changes to the information contained in this document without notice. Please contact your FUJITSU
SEMICONDUCTOR sales representatives before order of FUJITSU SEMICONDUCTOR device.
Information contained in this document, such as descriptions of function and application circuit examples is presented solely for
reference to examples of operations and uses of FUJITSU SEMICONDUCTOR device. FUJITSU SEMICONDUCTOR disclaims
any and all warranties of any kind, whether express or implied, related to such information, including, without limitation, quality,
accuracy, performance, proper operation of the device or non-infringement. If you develop equipment or product incorporating the
FUJITSU SEMICONDUCTOR device based on such information, you must assume any responsibility or liability arising out of or
in connection with such information or any use thereof. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any
damages whatsoever arising out of or in connection with such information or any use thereof.
Nothing contained in this document shall be construed as granting or conferring any right under any patents, copyrights, or any other
intellectual property rights of FUJITSU SEMICONDUCTOR or any third party by license or otherwise, express or implied.
FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any infringement of any intellectual property rights or other
rights of third parties resulting from or in connection with the information contained herein or use thereof.
The products described in this document are designed, developed and manufactured as contemplated for general use including
without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and
manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high levels of safety is secured,
could lead directly to death, personal injury, severe physical damage or other loss (including, without limitation, use in nuclear
facility, aircraft flight control system, air traffic control system, mass transport control system, medical life support system and
military application), or (2) for use requiring extremely high level of reliability (including, without limitation, submersible repeater
and artificial satellite). FUJITSU SEMICONDUCTOR shall not be liable for you and/or any third party for any claims or damages
arising out of or in connection with above-mentioned uses of the products.
Any semiconductor devices fail or malfunction with some probability. You are responsible for providing adequate designs and
safeguards against injury, damage or loss from such failures or malfunctions, by incorporating safety design measures into your
facility, equipments and products such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal
operating conditions.
The products and technical information described in this document are subject to the Foreign Exchange and Foreign Trade Control
Law of Japan, and may be subject to export or import laws or regulations in U.S. or other countries. You are responsible for ensuring
compliance with such laws and regulations relating to export or re-export of the products and technical information described herein.
All company names, brand names and trademarks herein are property of their respective owners.
Edited: System Memory Business Division