FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 ■ DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit (Min) : 3.0 V to 3.6 V : − 20 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2008.2 MB85R2001 ■ PIN ASSIGNMENTS (TOP VIEW) A11 A9 NC A8 A13 WE CE2 A15 NC VCC NC NC GND NC NC VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 OE NC GND A10 CE1 NC I/O8 I/O7 I/O6 I/O5 I/O4 VCC NC I/O3 I/O2 I/O1 NC NC NC A0 A1 GND A2 A3 (FPT-48P-M25) ■ PIN DESCRIPTIONS Pin name A0 to A17 I/O1 to I/O8 Address Input Data Input/Output CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input VCC Power Supply GND NC 2 Function Ground No Connection MB85R2001 ■ BLOCK DIAGRAM to · · · Address Latch. A0 Row Dec. Ferro Capacitor Cell A17 Column Dec. intCE2 S/A CE2 intOE intWE intCE2 intCE2 intCEB WE I/O1 to I/O8 OE intCEB I/O8 CE1 · · to I/O1 3 MB85R2001 ■ FUNCTION TRUTH TABLE Operation Mode Standby Pre-charge Read Read (Pseudo-SRAM, OE control*1) CE1 CE2 WE OE H X X X X L X X X X H H H L H L L H L High-Z Standby (ISB) H L Operation (ICC) H L Write (Pseudo-SRAM, WE control*2) Supply Current Dout H Write I/O1 to I/O8 Din H H L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance : Latch address and latch data at falling edge, : Latch address and latch data at rising edge *1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read. *2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write. 4 MB85R2001 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Min Max Unit Supply Voltage* VCC −0.5 +4.0 V Input Voltage* VIN −0.5 VCC + 0.5 V VOUT −0.5 VCC + 0.5 V TA −20 +85 °C Tstg −40 +125 °C Output Voltage* Ambient Operating Temperature Storage Temperature * : All voltages are referenced to GND = 0 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Supply Voltage* VCC 3.0 3.3 3.6 V Input Voltage (high)* VIH VCC x 0.8 ⎯ VCC + 0.5 V Input Voltage (low)* VIL −0.5 ⎯ +0.8 V Operating Temperature TA −20 ⎯ +85 °C * : All voltages are referenced to GND = 0 V. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 5 MB85R2001 ■ ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS Parameter Symbol Test Condition (within recommended operating conditions) Value Unit Min Typ Max Input Leakage Current |ILI| VIN = 0 V to VCC ⎯ ⎯ 10 µA Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH ⎯ ⎯ 10 µA Supply Current ICC CE1 = 0.2 V, CE2 = VCC − 0.2 V, IOUT = 0 mA*1 ⎯ 10 15 mA ⎯ 10 50 µA VCC x 0.8 ⎯ ⎯ V ⎯ ⎯ 0.4 V CE1 ≥ VCC − 0.2 V Standby Current ISB CE2 ≤ 0.2 V*2 OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*2 Output Voltage (high) VOH IOH = − 2.0 mA Output Voltage (low) VOL IOL = 2.0 mA *1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle. IOUT : output current *2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V. 6 MB85R2001 2. AC CHARACTERISTICS • AC TEST CONDITIONS Supply Voltage Operating Temperature Input Voltage Amplitude Input Rising Time Input Falling Time Input Evaluation Level Output Evaluation Level Output Impedance : 3.0 V to 3.6 V : −20 °C to +85 °C : 0.3 V to 2.7 V : 5 ns : 5 ns : 2.0 V / 0.8 V : 2.0 V / 0.8 V : 50 pF (1) Read Operation (within recommended operating conditions) Parameter Symbol Value Min Max Unit Read Cycle Time tRC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns OE Active Time tRP 120 ⎯ ns Pre-charge Time tPC 20 ⎯ ns Address Setup Time tAS 5 ⎯ ns Address Hold Time tAH 50 ⎯ ns OE Setup Time tES 5 ⎯ ns Output Hold Time tOH 0 ⎯ ns Output Set Time tLZ 30 ⎯ ns CE1 Access Time tCE1 ⎯ 100 ns CE2 Access Time tCE2 ⎯ 100 ns OE Access Time tOE ⎯ 100 ns Output Floating Time tOHZ ⎯ 20 ns (2) Write Operation (within recommended operating conditions) Parameter Symbol Value Min Max Unit Write Cycle Time tWC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns Pre-charge Time tPC 20 ⎯ ns Address Setup Time tAS 5 ⎯ ns Address Hold Time tAH 50 ⎯ ns Write Pulse Width tWP 120 ⎯ ns Data Setup Time tDS 0 ⎯ ns Data Hold Time tDH 50 ⎯ ns Write Setup Time tWS 5 ⎯ ns 7 MB85R2001 (3) Power ON/OFF Sequence (within recommended operating conditions) Value Symbol Min Typ Max CE1 level hold time for Power OFF tpd 85 ⎯ ⎯ ns CE1 level hold time for Power ON tpu 85 ⎯ ⎯ ns Parameter Unit 3. Pin Capacitance (f = 1 MHz, TA = +25 °C) Parameter Input Capacitance Output Capacitance 8 Symbol CIN COUT Test Condition Value Unit Min Typ Max VIN = GND ⎯ ⎯ 10 pF VOUT = GND ⎯ ⎯ 10 pF MB85R2001 ■ TIMING DIAGRAMS 1. Read Cycle Timing 1 (CE1, CE2 Control) tRC tCA1 tPC CE1 tCA2 CE2 tAS A0 to A17 tAH Valid H or L tES tRP OE tCE1, tCE2 tLZ I/O1 to I/O8 tOHZ tOH High-Z Valid Invalid Invalid 2. Read Cycle Timing 2 (OE Control) tCA1 CE1 CE2 tCA2 tAS A0 to A17 tAH Valid H or L tRC tPC tRP OE tOE tOH tLZ I/O1 to I/O8 tOHZ High-Z Valid Invalid Invalid 9 MB85R2001 3. Write Cycle Timing 1 (CE1, CE2 Control) tWC tCA1 tPC CE1 CE2 tCA2 tAH tAS A0 to A17 Valid H or L tWS tWP WE tDS tDH High-Z Valid Data In H or L 4. Write Cycle Timing 2 (WE Control) tCA1 CE1 tCA2 CE2 tAS A0 to A17 tAH Valid H or L tWC tWP tPC WE tDS tDH High-Z Data In 10 Valid H or L MB85R2001 ■ POWER ON/OFF SEQUENCE tpd tpu VCC VCC CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 ≤ 0.2 V GND GND CE1 > VCC × 0.8∗ CE1 CE1 : Don't Care CE1 > VCC × 0.8∗ CE1 * : CE1 (Max) < VCC + 0.5 V Note : You can choose either of CE1 or CE2, or both for disenable control of the device. ■ NOTES ON USE Data that is written prior to IR reflow is not guaranteed to be retained after IR reflow. ■ ORDERING INFOMATION Part number MB85R2001PFTN-GE1 Package 48-pin plastic TSOP(1) (FPT-48P-M25) 11 MB85R2001 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(1) Lead pitch 0.50 mm Package width × package length 12.00 × 12.40 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20 mm MAX Weight 0.37 g Code (Reference) P-TSOP(1)48-12×12.4-0.50 (FPT-48P-M25) 48-pin plastic TSOP(1) (FPT-48P-M25) Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max). Note 2) *2 : These dimensions do not include resin protrusions. Note 3) Pin widths and pin thicknesses include plating thickness. Note 4) Pin widths do not include tie bar cutting burrs. 0.10±0.05 (Stand off) (.004±.002) LEAD No. 1 48 0.50(.020) INDEX +0.05 0.22 –0.04 +.002 .009 –.002 *1 12.00±0.10 (.472±.004) 24 0.10(.004) M 25 1.13±0.07 (Mounting height) (.044±.003) 14.00±0.20(.551±.008) Details of "A" part *2 12.40±0.10(.488±.004) "A" 0˚~8˚ +0.05 0.08(.003) C 0.145 –0.03 +.002 .006 –.001 2003 FUJITSU LIMITED F48043S-c-2-2 Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/ 12 0.25(.010) 0.60±0.15 (.024±.006) Dimensions in mm (inches). Note: The values in parentheses are reference values MB85R2001 MEMO 13 MB85R2001 MEMO 14 MB85R2001 MEMO 15 MB85R2001 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. 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