FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256 ■ DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package ■ PACKAGES 28-pin plastic SOP 28-pin plastic TSOP(1) (FPT-28P-M17) (FPT-28P-M03) MB85R256 ■ PIN ASSIGNMENTS (TOP VIEW) A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 (FPT-28P-M17) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 (FPT-28P-M03) ■ PIN DESCRIPTIONS Pin name A0 to A14 Address Input I/O0 to I/O7 Data input/output CE Chip enable input WE Write Enable input OE Output enable input VCC Power supply ( + 3.3 V Typ) GND 2 Function Ground A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 MB85R256 ■ BLOCK DIAGRAM A14 to A10 Block decoder A14 to A0 Address latch A7 to A0 Row decoder FRAM array: 32,768 x 8 WE OE Pseudo-SRAM interface logic circuit CE A8, A9 Column decoder Control logic I/O latch bus driver I/O0-I/O7 I/O7 to I/O0 ■ FUNCTION LIST Operation mode Standby precharge CE WE OE H × × × L L I/O7 to I/O0 Power supply current High-Z Standby (ISB) Latch address L Write L L H Data input Read L H L Data output Output Disable × H H High-Z Operation (ICC) H: High level, L: Low level, x: Irrespective of “H” or “L” 3 MB85R256 ■ ABSOLUTE MAXIMUM RANGES Parameter Rating Symbol Min Max Unit Power supply voltage VCC − 0.5 + 4.6 V Input voltage VIN − 0.5 VCC + 0.5 V VOUT − 0.5 VCC + 0.5 V TA − 40 + 85 °C Tstg − 40 + 85 °C Output voltage Operating temperature Storage temperature WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power supply voltage VCC 3.0 3.3 3.6 V High level input voltage VIH 0.8 × VCC VCC + 0.5 V Low level input voltage VIL − 0.5 + 0.6 V Operating temperature TA − 40 + 85 °C WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 4 MB85R256 ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) Parameter Symbol Input leakage current | ILI | Output leakage current | ILO | Value Conditions Unit Min Typ Max VIN = 0 V to VCC 10 µA VOUT = 0 V to VCC, CE = VIH or OE = VIH 10 µA Operating power supply current ICC CE = 0.2 V, Other Inputs = VCC − 0.2 V/0.2 V, tRC (Min), Ii/o = 0 mA 5 10 mA Standby current ISB CE ≥ VCC 5 100 µA High level output voltage VOH IOH = − 100 µA 0.8 × VCC V Low level output voltage VOL IOL = 1.0 mA 0.4 V 2. AC Characteristics (1) Read cycle (within recommended operating conditions) Parameter Symbol Value Min Max Read cycle time tRC 235 CE active time tCA 150 10,000 Read pulse width tRP 150 10,000 Precharge time tPC 85 Address setup time tAS 0 Address hold time tAH 25 CE access time tCE 150 OE access time tOE 150 CE output floating time tHZ 25 OE output floating time tOHZ 25 Unit ns 5 MB85R256 (2) Write cycle (within recommended operating conditions) Parameter Value Symbol Min Max Write cycle time tWC 235 CE active time tCA 150 10,000 Write pulse width tWP 150 10,000 Precharge time tPC 85 Address setup time tAS 0 Address hold time tAH 25 Data setup time tDS 50 Data hold time tDH 0 Write set up time tWS 0 Write hold time tWH 0 Unit ns (3) Power ON/OFF sequence (within recommended operating conditions) Parameter Symbol Value Min Typ Max Unit CE LEVEL hold time at power OFF tpd 85 ns CE LEVEL hold time at power ON tpu 85 ns Power interval tpi 1 µs 3. Pin Capacitance Parameter Symbol Input capacitance CIN output capacitance COUT Conditions VIN = VOUT = GND, f = 1 MHz, TA = + 25 °C 4. AC Characteristics Test Condition 6 Power supply voltage : 3.0 V to 3.6 V Input voltage amplitude : 0.3 V to 2.7 V Input rising time : 10 ns Input falling time : 10 ns Input evaluation level : 2.0 V/0.8 V Output evaluation level : 2.0 V/0.8 V Output load : 100 pF Value Unit Min Typ Max 10 pF 10 pF MB85R256 ■ TIMING DIAGRAM 1. Read cycle (CE Control) tRC tPC tPC tCA CE tAS A14 to A0 tAH tAS tAH Valid Valid tRC tPC OE tPC tRP tOE I/O7 to I/O0 High-Z Valid tOHZ High-Z Valid tHZ tCE WE “H” level : Don't care. 2. Read cycle (OE Control) tRC tPC tPC tCA CE tAS A14 to A0 tAH tAS tAH Valid Valid tRC tPC OE tRP tOE I/O7 to I/O0 High-Z Valid tOHZ High-Z Valid tHZ tCE WE tPC “H” level : Don't care. 7 MB85R256 3. Write cycle (CE Control) tWC tPC tPC tCA CE tAS A14 to A0 tAS tAH Valid Valid tWC tPC tWH tAH tWS tPC tWH tWS tWP WE tDS tDS tDH Valid Valid Data In tDH OE “H” level : Don't care. 4. Write cycle (WE Control) tWC tPC tPC tCA CE tAS A14 to A0 tPC tDS tPC tWH tWS tDS tDH “H” level : Don't care. tDH Valid Valid OE 8 tWC tWP WE tAH Valid Valid tWH Data In tAS tAH tWS MB85R256 ■ POWER ON/OFF SEQUENCE tpd tpi tpu VCC VCC 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) 0.2 V GND VIL (Max) 0.2 V GND CE > VCC × 0.8* CE : Don't Care CE > VCC × 0.8* CE CE * : CE (Max) < VCC + 0.5 V ■ NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. ■ ORDERING INFORMATION Part number MB85R256PF MB85R256PFTN Package Remarks 28-pin, plastic SOP (FPT-28P-M17) 28-pin, plastic TSOP(1) (FPT-28P-M03) 9 MB85R256 ■ PACKAGE DIMENSIONS Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. 28-pin plastic SOP (FPT-28P-M17) +0.25 +.010 +0.03 *1 17.75 –0.20 .699 –.008 0.17 –0.04 +.001 .007 –.002 15 28 11.80±0.30 (.465±.012) *2 8.60±0.20 INDEX (.339±.008) Details of "A" part 2.65±0.15 (Mounting height) (.104±.006) 0.25(.010) 1 1.27(.050) 14 0.47±0.08 (.019±.003) 0.13(.005) "A" 0~8˚ M 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006) 0.20±0.15 (.008±.006) (Stand off) 0.10(.004) C 2002 FUJITSU LIMITED F28048S-c-3-4 Dimensions in mm (inches). Note: The values in parentheses are reference values. (Continued) 10 MB85R256 (Continued) 28-pin plastic TSOP(1) (FPT-28P-M03) 22 21 Details of "A" part 0.15(.006) MAX INDEX 28 LEAD No. "A" 1 0.35(.014) MAX 0.15(.006) 7 0.25(.010) 8 13.40±0.20 (.528±.008) 8.00±0.20 (.315±.008) 11.80±0.20 (.465±.008) 7.15(.281)REF +0.10 1.10 –0.05 +.004 .043 –.002 (Mounting height) 0.15±0.05 (.006±.002) 0.10(.004) 12.40±0.20 (.488±.008) C 0(0)MIN (STAND OFF) 0.55(.0217) TYP 0.50±0.10 (.020±.004) 0.20±0.10 (.008±.004) 0.09(.004) M 1997 FUJITSU LIMITED F28018S-5C-3 Dimensions in mm (inches). Note: The values in parentheses are reference values. 11 MB85R256 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. 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