S300Y thru S300ZR
Silicon Standard
Recovery Diode
VRRM = 1600 V - 2000 V
IF =300 A
Features
• High Surge Capability
• Types from 1600 V to 2000 V VRRM
DO-9 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S300Y (R)
S300Z (R)
Unit
Repetitive peak reverse voltage
VRRM
1600
2000
V
RMS reverse voltage
VRMS
1131
1414
V
DC blocking voltage
VDC
1600
2000
V
Continuous forward current
IF
TC ≤ 130 °C
300
300
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
6850
6850
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Conditions
S300Y (R)
S300Z (R)
Unit
IF = 300 A, Tj = 25 °C
VR = 1600 V, Tj = 25 °C
VR = 1600 V, Tj = 175 °C
1.2
10
12
1.2
10
12
μA
mA
0.16
0.16
°C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
VF
IR
V
Thermal characteristics
Thermal resistance, junction case
RthJC
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
S300Y thru S300ZR
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
S300Y thru S300ZR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO-9 (DO--205AB)
H
I
F
B
D
G
C
E
A
Inches
Min
Millimeters
Max
A
Min
Max
-----
27.94
M 20 * P 1.5
B
-----
C
1.24
D
5.31
5.98
135
152
E
0.78
0.828
19.60
21.03
F
0.470
0.530
11.94
13.46
G
-----
1.122
-----
28.5
H
-----
0.787
-----
20.0
I
0.330
0.350
8.38
8.89
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1.10
1.25
31.5
3
31.90