S40B thru S40JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF =40 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S40B (R) S40D (R) S40G (R) S40J (R) Unit Repetitive peak reverse voltage VRRM 100 200 400 600 V RMS reverse voltage VRMS 70 140 280 420 V DC blocking voltage VDC 600 V 100 200 400 Continuous forward current IF TC ≤ 140 °C 40 40 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 595 595 595 595 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions S40B (R) S40D (R) S40G (R) S40J (R) Unit IF = 40 A, Tj = 25 °C VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 190 °C 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 9 μA mA 1.25 1.25 1.25 1.25 °C/W V Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 S40B thru S40JR www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 S40B thru S40JR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 5 (DO-203AB) M J K P D B G N F C E A Inches Min Millimeters Max A Min Max 1/4 –28 UNF B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3