1N3765 thru 1N3768R Silicon Standard Recovery Diode VRRM = 700 V - 1000 V IF = 35 A Features • High Surge Capability • Types from 700 V to 1000 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Parameter Symbol Unit Repetitive peak reverse voltage VRRM 700 800 900 1000 V RMS reverse voltage VRMS 490 560 630 700 V DC blocking voltage VDC 1000 V 700 800 900 Continuous forward current IF TC ≤ 140 °C 35 35 35 35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 475 475 475 475 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) IF = 35 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C Unit V 1.2 10 10 1.2 10 10 1.2 10 10 1.2 10 10 μA mA 0.25 0.25 0.25 0.25 °C/W Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N3765 thru 1N3768R www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N3765 thru 1N3768R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 5 (DO-203AB) M J K P D B G N F C E A Inches Millimeters Min Max Min Max B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 A 1/4 –28 UNF G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3