1N3671A thru 1N3673AR Silicon Standard Recovery Diode VRRM = 800 V - 1000 V IF = 12 A Features • High Surge Capability • Types from 800 V to 1000 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3671A (R) 1N3673A (R) Unit Repetitive peak reverse voltage VRRM 800 1000 V RMS reverse voltage VRMS 560 700 V DC blocking voltage VDC 800 1000 V Continuous forward current IF TC ≤ 150 °C 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N3671A (R) 1N3673A (R) Unit IF = 12 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 15 1.1 10 15 μA mA 2.00 2.00 °C/W V Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N3671A thru 1N3673AR www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N3671A thru 1N3673AR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A Inches Min Millimeters Max A Min Max 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3