MURT10040 thru MURT10060R
Silicon Super Fast
Recovery Diode
VRRM = 400 V - 600 V
IF(AV) = 100 A
Features
• High Surge Capability
• Types from 400 V to 600 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURT10040(R)
MURT10060(R)
Unit
Repetitive peak reverse voltage
VRRM
400
600
V
RMS reverse voltage
VRMS
283
424
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
400
-55 to 150
-55 to 150
600
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURT10040(R)
MURT10060(R)
Unit
Average forward current (per pkg)
IF(AV)
TC = 140 °C
100
100
A
Peak forward surge current (per leg)
IFSM
tp = 8.3 ms, half sine
1500
1500
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 50 A, Tj = 25 °C
1.3
1.7
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 25 °C
25
25
μA
Tj = 125 °C
1
1
mA
Maximum reverse recovery time (per
leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
90
110
nS
1.0
1.0
°C/W
Parameter
Thermal characteristics
Maximum thermal resistance, junction
- case (per leg)
RΘJC
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MURT10040 thru MURT10060R
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MURT10040 thru MURT10060R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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