MURTA60020 thru MURTA60040R Silicon Super Fast Recovery Diode VRRM = 200 V - 400 V IF(AV) = 600 A Features • High Surge Capability • Types from 200 V to 400 V VRRM Heavy Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA60020(R) MURTA60040(R) Unit 400 V Repetitive peak reverse voltage VRRM 200 RMS reverse voltage VRMS 141 283 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURTA60020(R) MURTA60040(R) Unit Average forward current (per pkg) IF(AV) TC = 100 °C 600 600 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 4400 4400 A Maximum instantaneous forward voltage (per leg) VF IFM = 300 A, Tj = 25 °C 1.0 1.3 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 25 25 μA Tj = 125 °C 5 5 mA Maximum reverse recovery time (per leg) Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 250 250 ns 0.28 0.28 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURTA60020 thru MURTA60040R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURTA60020 thru MURTA60040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3