MURF10040 thru MURF10060R Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF(AV) = 100 A Features • High Surge Capability • Types from 400 V to 600 V VRRM TO-244 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURF10040(R) MURF10060(R) Unit 600 V Repetitive peak reverse voltage VRRM 400 RMS reverse voltage VRMS 280 420 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 400 -55 to 150 -55 to 150 600 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURF10040(R) MURF10060(R) Unit Average forward current (per pkg) IF(AV) TC = 140 °C 100 100 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 1500 1500 A Maximum instantaneous forward voltage (per leg) VF IFM = 50 A, Tj = 25 °C 1.3 1.70 V Maximum reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 25 25 μA 3 mA Trr Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A 3 Maximum reverse recovery time (per leg) 90 110 nS 1.00 1.00 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURF10040 thru MURF10060R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURF10040 thru MURF10060R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3