FST16045 thru FST160100

FST16045 thru FST160100
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 160 A
Features
• High Surge Capability
• Types from 45 V to 100V VRRM
TO-249AB Package
• Isolated to Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045
FST16060
FST16080
FST160100
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
45
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045
FST16060
FST16080
FST160100
Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
160
160
160
160
A
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
1000
1000
1000
1000
A
VF
IFM = 80 A, Tj = 25 °C
0.75
0.80
0.84
0.84
V
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
1
10
30
1
10
30
mA
0.50
0.50
0.50
0.50
°C/W
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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FST16045 thru FST160100
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FST16045 thru FST160100
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
N
A
P
G
E
C
J
1
L
M
R
2
Q
3
B
F
K
H
D
Inches
Millimeters
Min
Max
Min
Max
A
1.995
2.005
50.67
50.93
B
0.300
0.325
7.62
8.26
C
0.495
0.505
12.57
12.83
D
0.182
0.192
4.62
4.88
E
0.990
1.010
25.15
26.65
F
2.390
2.410
60.71
61.21
G
1.495
1.525
37.90
38.70
H
0.114
0.122
2.90
3.10
J
-----
0.420
-----
10.67
K
0.256
0.275
6.5
7.0
L
0.490
0.510
12.45
12.95
M
0.330
0.350
8.38
8.90
N
0.175
0.195
4.45
4.95
P
0.035
0.045
0.89
1.14
R
0.445
0.455
11.30
11.56
Q
0.890
0.910
22.61
23.11
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